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STTH6102TV
February 2004 - Ed: 1
HIGH EFFICIENCY ULTRAFAST DIODE
®
Dual center tap rectifier suited for welding
equipment and high power industrial application.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of power
converters.
DESCRIPTION
■Suited for welding and high power equipment
■Very low forward losses
■Low recovery times
■High surge current capability
■Insulated:
Insulating voltage = 2500 VRMS
Capacitance < 45 pF
■Low leakage current
FEATURES AND BENEFITS
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V
IF(RMS) RMS forward current Per diode 80 A
IF(AV) Average forward current δ=0.5 Tc = 115°C Per diode 30 A
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal per diode 400 A
Tstg Storage temperature range - 55 + 150 °C
Tj Maximum operating junction temperature 150 °C
ABSOLUTE RATINGS (limiting values, per diode)
IF(AV) 2x30A
VRRM 200 V
Tj (max) 150 °C
VF(typ) 0.70 V
trr (typ) 25 ns
MAIN PRODUCT CHARACTERISTICS
K2
K1
A1
A2
ISOTOP
STTH6102TV1
A1
A2
K1
K2
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Symbol Parameter Tests conditions Min. Typ. Max. Unit
IR*Reverse leakage
current
Tj = 25°C VR=V
RRM 50 µA
Tj = 125°C 25 250
VF** Forward voltage drop Tj = 25°C IF=30A 1.05 V
Tj = 25°C IF=60A 1.15
Tj = 150°C IF=30A 0.70 0.81
Tj = 150°C IF=60A 0.96
Pulse test: * tp = 5ms, δ<2%
** tp = 380µs, δ<2%
To evaluate the maximum conduction losses use the following equation :
P = 0.66 x IF(AV) + 0.005 IF2(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Maximum Unit
Rth (j-c) Junction to case Per diode 1.2 °C/W
Per device 0.65
Rth (j-c) Coupling 0.1 °C/W
When the diodes 1 and 2 are used simultaneously:
∆Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
THERMAL PARAMETERS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse
recovery time
Tj = 25°C IF=1A V
R= 30V
dIF/dt = 200 A/µs
25 30 ns
IRM Reverse
recovery current
Tj = 125°C IF=30A V
R= 160V
dIF/dt = 200 A/µs
6.8 8.8 A
tfr Forward
recovery time
Tj = 25°C IF=30A dI
F/dt = 200 A/µs
VFR = 1.1 x VFmax
220 ns
VFP Forward
recovery voltage
Tj = 25°C IF=30A dI
F/dt = 200 A/µs 2.5 V
DYNAMIC ELECTRICAL CHARACTERISTICS
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0
25
50
75
100
125
150
175
200
225
250
275
300
325
350
375
400
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I (A)
M
T
δ=tp/T tp
IM
P = 20W
P = 60W
P = 30W
δ
Fig. 1: Peak current versus duty cycle (per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V(V)
FM
I(A)
FM
T =150°C
j
T =25°C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
Single pulse
t (s)
p
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
10
100
1000
0 50 100 150 200
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
50
100
150
200
250
300
10 100 1000
Q (nC)
rr
dI /dt(A/µs)
F
I =30A
F
V =160V
R
T =125°C
j
T =25°C
j
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
I (A)
FM
V (V)
FM
T =150°C
j
T =25°C
j
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
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0
10
20
30
40
50
60
70
80
10 100 1000
t(ns)
rr
dI /dt(A/µs)
F
T =25°C
j
T =125°C
j
I =30A
F
V =160V
R
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode).
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
10 100 1000
I(A)
RM
T =25°C
j
T =125°C
j
dI /dt(A/µs)
F
I =30A
F
V =160V
R
Fig. 7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125
IRM
Qrr
T (°C)
j
Q;
rr I [T ]/Q ;I [T =125°C]
RM j rr RM j
I =30A
F
V =160V
R
Fig. 8: Dynamic parameters versus junction
temperature.
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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PACKAGE MECHANICAL DATA
ISOTOP
S
G
D1
D
B
O P
/
F
A1
A
G2 E
C2 C
E2
P1
F1
E1 G1
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
Ordering code Marking Package Weight Base qty Delivery mode
STTH6102TV1 STTH6102TV1 ISOTOP 27 g
(without screws)
10
(with screws)
Tube
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