TOSHIBA Jan 1998 TIM7785-16SL-031 1. RF PERFORMANCE SPECIFICATIONS _(Ta= 25 C) CHARACTERISTICS | SYMBOL| CONDITION | MIN. | TYP. | MAX. | UNIT Output Power at 1dB P1dB 40.5 | 41.5 | | dBm Compression Point Vps= 10V Power Gain at 1dB GidB_i|f=7.7-8.5GHz | 6.0 | 7.0 dB Compression Point lpS=3.1A(Const) 3rd Order Intermodulation IM3 NOTE -40 _ _ dBc Distortion Channel Temperature ATch _ _ 80 i Rise NOTE : Two Tone Test, Po= 31.5dBm (Single Carrier Level) Vps= 10V, IpS=3,1A(Const) 2. ELECTRICAL CHARACTERISTICS (Ta= 25 C) CHARACTERISTICS | SYMBOL] CONDITION | MIN. | TYP. | MAX. | UNIT Transconductance gm Vps= 3V |3600; ms IDS= 6.0A Pinch-off Voltage VaGSoff |VDS= 3V -1.0 | -2.5 | -4.0 V Ips= 60mA Saturated Drain Current Ipss_ |VDS= 3V |105)140) A Vas= OV Gate-Source Vaso jlas=-200 pA| -5 V Breakdown Voltage Thermal Resistance Rth(c-c) |Channel to | 15 | 2.0 | C/W Case Applications Engineering Microwave Solid-State Department TOSHIBA CORPORATION, Komukai Works