APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 (R) E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * High Freq. Switching to 20KHz * RBSOA and SCSOA Rated * Ultra Low Leakage Current C G ISOTOP (R) S OT 22 7 "UL Recognized" file # E145592 C * Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT50GF120JRDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 120 I C2 Continuous Collector Current @ TC = 100C 64 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 225 Switching Safe Operating Area @ TJ = 150C 225A @ 1200V Total Power Dissipation Watts 521 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 750A) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 5.5 6.5 2.5 3.0 Units 1200 (VCE = VGE, I C = 700A, Tj = 25C) 4.5 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) TYP 3.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Volts 0.75 2 Gate-Emitter Leakage Current (VGE = 20V) 5.5 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com mA nA 3-2006 V(BR)CES MIN Rev A Characteristic / Test Conditions 052-6283 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GF120JRDQ3 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf 300 Gate Charge 10.0 VGE = 15V 495 TJ = 150C, R G = 1.0, VGE = 7965 TJ = +25C 4340 36 VCC = 800V 70 Turn-off Delay Time VGE = 15V 410 RG = 1.0 110 7890 I C = 75A Current Fall Time Eoff Turn-off Switching Energy J 9895 Inductive Switching (125C) Current Rise Time Turn-on Switching Energy (Diode) ns 65 RG = 1.0 Turn-on Delay Time Turn-on Switching Energy nC 355 6 Eon2 V A 70 I C = 75A Eon1 pF 225 36 5 UNIT 290 VCC = 800V 4 MAX 50 Inductive Switching (25C) Current Fall Time Turn-off Switching Energy td(off) f = 1 MHz 15V, L = 100H,VCE = 1200V Turn-off Delay Time Eoff tr 555 VGE = 15V Turn-on Switching Energy (Diode) td(on) 5320 VGE = 0V, VCE = 25V I C = 75A Current Rise Time Eon2 TYP Capacitance VCE = 600V Turn-on Delay Time Turn-on Switching Energy MIN 44 55 TJ = +125C ns J 14110 6 6040 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .24 RJC Junction to Case (DIODE) .56 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6283 Rev A 3-2006 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TJ = -55C IC, COLLECTOR CURRENT (A) 120 TJ = 25C 100 80 TJ = 125C 60 40 20 0 IC, COLLECTOR CURRENT (A) 120 100 TJ = -55C 80 60 TJ = 25C 40 20 0 TJ = 125C 0 12V 150 11V 10V 100 9V 50 8V FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 200 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25C) 140 13V 250 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 160 15V 300 J 10 VCE = 960V 8 6 4 2 0 100 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 4 3 IC = 75A IC = 37.5A 2 1 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage IC = 37.5A 2 1 0 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) 0.85 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160 0.90 IC = 75A 3 1.10 0.95 IC = 150A 4 180 1.00 600 5 1.15 1.05 200 300 400 500 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 150A (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 5 VCE = 240V VCE = 600V 12 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 75A C T = 25C 14 0 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 3-2006 = 15V Rev A GE 052-6283 V 140 APT50GF120JRDQ3 350 IC, COLLECTOR CURRENT (A) 160 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 40 VGE = 15V 35 30 25 20 15 10 VCE = 800V TJ = 25C or 125C 5 R = 1.0 G L = 100H 0 VCE = 800V RG = 1.0 L = 100H TJ = 25 or 125C,VGE = 15V 150 100 100 TJ = 125C, VGE = 15V 80 60 TJ = 25C, VGE = 15V 40 20 0 10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 14 EOFF, TURN OFF ENERGY LOSS (mJ) = 800V V CE = +15V V GE R = 1.0 G 40 TJ = 125C 30 20 10 TJ = 25C 70 Eon2,150A J 60 50 40 30 Eon2,75A 20 Eoff,75A 10 Eoff,37.5A Eoff,150A Eon2,37.5A 20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 G TJ = 125C 10 8 6 4 TJ = 25C 2 50 SWITCHING ENERGY LOSSES (mJ) = 800V V CE = +15V V GE T = 125C 12 10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 80 = 800V V CE = +15V V GE R = 1.0 0 0 0 RG = 1.0, L = 100H, VCE = 800V 120 tf, FALL TIME (ns) tr, RISE TIME (ns) 100 140 RG = 1.0, L = 100H, VCE = 800V 50 EON2, TURN ON ENERGY LOSS (mJ) 200 250 50 70 90 110 130 150 170 10 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current SWITCHING ENERGY LOSSES (mJ) VGE =15V,TJ=25C 10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 0 3-2006 VGE =15V,TJ=125C 300 0 50 Rev A 400 10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 200 052-6283 APT50GF120JRDQ3 500 45 = 800V V CE = +15V V GE R = 1.0 Eon2,150A G 40 30 20 Eon2,75A Eoff,150A 10 Eoff,75A 0 Eon2,37.5A Eoff,37.5A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES P C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 500 APT50GF120JRDQ3 250 1,000 100 Coes 50 Cres 200 150 100 50 0 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.25 0.7 0.15 0.5 Note: 0.10 PDM ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.20 0.3 t2 0.05 t 0.1 0 t1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Dissipated Power (Watts) 0.0307 0.595 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 10 F 5 T = 100C = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max C T = 125C J D = 50 % V = 800V CE R = 1.0 G 1 fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RJC 10 20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 3-2006 0.175 C Rev A 0.655 T = 75C 052-6283 TC (C) ZEXT TJ (C) FMAX, OPERATING FREQUENCY (kHz) 50 APT50GF120JRDQ3 APT60DQ120 Gate Voltage 10% TJ = 125C td(on) IC V CC tr V CE Collector Current 90% 10% 5% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit Gate Voltage 90% TJ = 125C td(off) 90% tf Collector Voltage 10% 0 Collector Current Switching Energy 052-6283 Rev A 3-2006 Figure 23, Turn-off Switching Waveforms and Definitions TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM All Ratings: TC = 25C unless otherwise specified. APT50GF120JRDQ3 Characteristic / Test Conditions Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) 60 RMS Forward Current (Square wave, 50% duty) 73 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) UNIT Amps 540 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions Forward Voltage MIN TYP IF = 75A 2.8 IF = 150A 3.48 IF = 75A, TJ = 125C 2.17 MAX UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX- UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J - 60 trr Reverse Recovery Time - 265 Qrr Reverse Recovery Charge - 560 - 5 - 350 ns - 2890 nC - 13 - 150 - 4720 - 40 IRRM Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C ns nC - - Amps Amps ns - nC Amps D = 0.9 0.40 0.7 0.30 0.5 0.20 0.3 Note: PDM 0.50 t1 t2 0.10 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TC (C) 0.149 0.238 0.174 Dissipated Power (Watts) 0.006 0.091 3-2006 TJ (C) 0.524 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL Rev A 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 052-6283 0 t 0.1 ZEXT ZJC, THERMAL IMPEDANCE (C/W) 0.60 200 140 TJ = 175C 120 100 TJ = 125C 80 60 TJ = 25C 40 TJ = -55C 20 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 7000 T = 125C J V = 800V R 6000 120A 5000 4000 60A 3000 30A 2000 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change IRRM 0 CJ, JUNCTION CAPACITANCE (pF) 350 3-2006 50 T = 125C J V = 800V 45 120A R 40 35 30 25 60A 20 15 30A 10 5 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 90 Duty cycle = 0.5 T = 175C 80 J 50 40 20 10 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature Rev A 100 30 0.2 052-6283 150 60 Qrr 300 250 200 150 100 50 0 30A 200 70 0.4 0.0 60A 250 0 trr 0.6 300 R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change trr 0.8 350 0 Qrr 1.0 T = 125C J V = 800V 120A 50 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 trr, REVERSE RECOVERY TIME (ns) 160 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 180 0 APT50GF120JRDQ3 400 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter/Anode 30.1 (1.185) 30.3 (1.193) * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode ISOTOP(R) is a Registered Trademark of SGS Thomson. Collector/Cathode Gate Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3-2006 3.3 (.129) 3.6 (.143) Rev A r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 052-6283 7.8 (.307) 8.2 (.322)