BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features * DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc * Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 90 720 W W/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS Symbol Max Unit qJC 1.39 C/W 2 TO-220AB CASE 221A-09 STYLE 1 3 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BD8xxG AY WW BD8xx = A Y WW G = = = = Device Code x = 09 or 10 Assembly Location Year Work Week Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 5 1 Publication Order Number: BD809/D BD809 (NPN), BD810 (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Collector-Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) BVCEO Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 V) hFE Min Max Unit 80 - - Vdc - 1.0 - 2.0 30 15 - - mAdc mAdc Collector-Emitter Saturation Voltage (Note 1) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) - 1.1 Vdc Base-Emitter On Voltage (Note 1) (IC = 4.0 Adc, VCE = 2.0 Vdc) VBE(on) - 1.6 Vdc fT 1.5 - MHz Current-Gain Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%. 1 ms 5 ms 10 3 .5 ms 1 ms PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) 90 dc 1 0.3 0.1 1 3 10 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 70 60 50 40 30 20 10 0 100 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) Figure 1. Active Region DC Safe Operating Area (see Note 1) Figure 2. Power-Temperature Derating Curve http://onsemi.com 2 BD809 (NPN), BD810 (PNP) NPN BD809 PNP BD810 500 500 TJ = 150C 100 -55C 50 20 VCE = 2.0 V 10 5.0 0.2 0.5 TJ = 150C 200 25C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 25C 100 -55C 50 20 10 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 5.0 20 VCE = 2.0 V 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 2.0 TJ = 25C 1.8 1.6 1.4 1.2 1.0 IC = 1.0 A 0.8 4.0 A 8.0 A 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 2.0 TJ = 25C 1.8 1.6 1.4 1.2 IC = 1.0 A 1.0 4.0 A 8.0 A 0.8 0.6 0.4 0.2 0 5.0 20 10 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 Figure 4. Collector Saturation Region 2.8 2.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 1.6 1.2 VBE(sat) = IC/IB = 10 0.8 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 2.0 V 0.4 TJ = 25C 2.4 TJ = 25C 2.4 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 0.2 20 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages http://onsemi.com 3 10 20 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE BD809 (NPN), BD810 (PNP) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.07 0.05 0.1 qJC(t) = r(t) qJC 0.02 0.03 0.02 0.01 0.01 SINGLE P(pk) PULSE 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) SINGLE PULSE 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, PULSE WIDTH (ms) 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 Figure 6. Thermal Response Note 1: The data of Figure 1 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. ORDERING INFORMATION Device BD809 BD809G BD810 BD810G Package Shipping TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BD809 (NPN), BD810 (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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