© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 5
1Publication Order Number:
BD809/D
BD809 (NPN), BD810 (PNP)
Plastic High Power
Silicon Transistor
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
Features
•DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 80 Vdc
Collector−Base Voltage VCBO 80 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current IC10 Adc
Base Current IB6.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD90
720
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case qJC 1.39 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
POWER TRANSISTORS
80 VOLTS
90 WATTS
TO−220AB
CASE 221A−09
STYLE 11
http://onsemi.com
MARKING DIAGRAM
BD8xx = Device Code
x = 09 or 10
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
23
BD8xxG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
BD809 (NPN), BD810 (PNP)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
BVCEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
2.0
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
30
15
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 1)
(IC = 3.0 Adc, IB = 0.3 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.1
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (Note 1)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.6
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
MHz
1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
1
0.1 3 10 30 100
0.3
IC, COLLECTOR CURRENT (AMP)
dc
5 ms
1
1 ms
.5 ms
1 ms
90
80
00 25 50 100 125 150 175
Figure 2. Power−Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
75
10
70
60
50
40
30
20
BD809 (NPN), BD810 (PNP)
http://onsemi.com
3
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.50.2 101.0 2.0
100
50
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
200
20
20
NPN
BD809
PNP
BD810
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
5.0
VCE = 2.0 V
VCE = 2.0 V
10
5.0 0.50.2 101.0 2.0 205.0
500
100
50
200
20
5.0
10
5.0 100
IC = 1.0 A
TJ = 25°C
10
4.0 A 8.0 A
20 50 20001000200 500
Figure 4. Collector Saturation Region
2.0
IB, BASE CURRENT (mA)
5.0 100 5000
1.8
1.6
1.4
1.2
IC = 1.0 A
TJ = 25°C
010
4.0 A 8.0 A
20 50
1.0
0.2
0.6
0.8
0.4
20001000200 500 5000
2.0
1.8
1.6
1.4
1.2
0
1.0
0.2
0.6
0.8
0.4
IB, BASE CURRENT (mA)
VCE(sat) @ IC/IB = 10
TJ = 25°C
VBE @ VCE = 2.0 V
2.8
1.6
1.2
2.4
0
0.8
0.4
0.2 0.5 2.0 20101.0 5.0
VBE(sat) @ IC/IB = 10
2.0
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
Figure 5. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
VCE(sat) @ IC/IB = 10
TJ = 25°C
VBE @ VCE = 2.0 V
2.8
1.6
1.2
2.4
0
0.8
0.4
0.2 0.5 2.0 20101.0 5.0
VBE(sat) = IC/IB = 10
2.0
BD809 (NPN), BD810 (PNP)
http://onsemi.com
4
Figure 6. Thermal Response
t, PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 20 30 50 100 200 300 100
0
500
qJC(t) = r(t) qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
Note 1:
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
ORDERING INFORMATION
Device Package Shipping†
BD809 TO−220
50 Units / Rail
BD809G TO−220
(Pb−Free)
BD810 TO−220
50 Units / Rail
BD810G TO−220
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BD809 (NPN), BD810 (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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Phone: 81−3−5817−1050
BD809/D
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