_ oz ef sazsoar onaab4 3 fl 3875081 GE SOLID STATE O1E 18364 Db T-39-11 Standard Power MOSFETs File Number 1579 IRF720, IRF721, IRF722, IRF723 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode N-CHANNEL ENHANCEMENT MODE Power Field-Effect Transistors D 2.5A and 3.0A, 350V-400V ros(On) = 1,8Q and 2.50 Features: 6 @ SOA is power-dissipation limited = Nanosecond switching speeds @ Linear transter characteristics : High input impedance Majority carrier davice S2C8-29744 TERMINAL DIAGRAM The IRF720, !RF721, IRF722 and 'AF723 are n-channel enhancement-mode silicon-gate power field- TERMINAL DESIGNATION effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay ce drivers, and drivers for high-power bipolar switching tran- cree) 4 DRAIN sistors requiring high speed and low gate-drive power. QO === These types can be operated directly from integrated = circuits. TOP VIEW Gate The !RF-lypes are supplied in the JEDEC TO-220AB plastic s2C8-a9520 package, SOURCE JEDEC T0-220AB Absolute Maximum Ratings IRF720 Drain - 400 Oran: 3.0 Crain 2.0 Pulsed Orain 12 Gate - Source t (Ses 14) Lnesr Factor toductive Currant, Clamped } $5 and 161L = 100.H 12 10 Operating Junction and . Temperature Range 5B to 160 lead _ 3073675081 GE SOLID STATE 1 pel 7-39-11 Standard Power MOSFETs pe Paarsoar OO183b5 5 T IRF720, IRF721, IRF722, IRF723 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. [Units Test Conditians BYoss Drain: Source Breakdown Voltage lAF720 . . . > 1AF?722 | 400 v Vas = ov : ineyes | 350 | - | - v Ip = 250nA Vos th} Gate Threshold Voltage ALL 2.0 4.0 v Yos = Yes. tp = 2504A igss Gate-Source Leakage Forward ALL - = 600 nA Vgs = 20V ggg _Gale-Source Leakage Rovarse ALL = _ {-500 nA Vag = -20 loss __2ato Gate Voltage Drain Current ALL ~ | 260 [aA Vos < Max. Rating, Vgg = OV = = | 1000] A Vpg = Man. Rating x 0.8, Vgg = OV. Tc = 125C . ipton) On-State Grain Current 1RF720 | ag | _ _ A : IAF721 . Vos ?'o1en) * Poston max. Yes * 10 wF722 | 26 | _ _ A IAF?23 * Rosion} Static Orain-Source On-State IAF 720 . 16 | 18 0 Rasintance IAFF24 y tov 1.54 R722 | vg | as a 6s ror IRF723 ~ . Os Forward Transconductance @ ALL 10 [20] - sip) Vos )Toton) * ostont max. 10 = oA Ciss Input Capacitance ALL - 450 | 600 pF Vos * OV. Vog = 25, f= 1.0MHz Cosy __ Output Capacitance ALL =| 100 [ 200 [ oF See Fig. 10 Crss Reverse Transfer Capacitance ALL ~ 20 40 oF 'gtony__Tutn-On Delay Time ALL 20 | 40 ne Vop " 0.8 8Vos5 Ip = 15A,Z, = 500 t Ruse Time ALL = 25 50 ne See Fig. 17 Igioity Turn-Off Delay Teme ALL - 50 100 ne IMOSFET switching times are essentially tf Fall Time ALL = 25 ry) ne Independent of operating temperature.) Q Total Gate Charge - Vag = 10V. Ip = 4.04, Vog = 0.8 Max, Rating. 8 (Gete-Source Plus Gate-Drain) ALL 2 16 ne See Fig. 16 (or test circuit, date charge is essentially Qos Gate-Source Charge ALL - 60} - aC independent of operating temperature.| Ogg Gate-Drain ("Miller") Charge ALL - 4.0 - nc Lo (Internal Ovain Inductance - 3.5 - aH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of de, internal device ALL - 4s - oH Measured from the deain lead, 6mm (0.25 D in.} from package to canter of die, w ls Internal Source Inductance ALL - 78 - oH Measured trom the source lead, Gm 6 {0.26 in.) from ts package to source bonding pad. s Thermal Resistance Rinse dunctiqn-to-Case ALL _ - 3.42 | oc7w Pines Caso-to-Sink ALL = 1.0 - oC ew M ing turtece flat, smooth, and gressed. Rinja Junction to-Ambient AUL = - 80. CAN Free Als Operation Source-Drain Diode Ratings and Characteristics Ig Continuous Source Current IRF720 . _ 30 A Modihed MOSFET symbol sof {Body Dioda) IRFI21 . showing the nlegral _ o TAF 722 teverse PN junction racufier, we72a | ~ | - | 25 | A 'sm Pulse Source Currant IRF720 _ . 12 A G (Body Diodel@ iRF721 $s IRF722 inF723 | ~ | ~ | 'O | 4 vs Chode F. d Volt: IRE 720 sp e Forward Voltage @ oa - | - | we] ov Te = 26C, 15 = 9 0A, Vgg = OV IAF? ina | ~ [ts v Te * 28C. Ig = 2.5A. Vag = OV tr Reverse Recovery Time AUL - 450} - ny Ty = 150C, Ip = 3.04, dig/dt = 100 Alus Qan _ Reverse Recovered Charge ALL = 3.1 - xc Ty = YS0C. Ie = 3.04, dipidt = 100 ius ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible Tuen on speed is substantially controlted by Lg lp. OT = 25C to 180C. Pulse Test: Pulse width < 300us, Duty Cvele 2% @ Repetitive Rating Pulse width limited . by maz. junction temperature. See Transient Thermal Impedance Cusve (Fig $1. 308 __HORMALIZED EFFECTIVE TRANSIENT MAL IMPEDANCE (PER UNITE THER Zengcltl/s tp, DRAIN CURRENT (AMPERES) 1p, DRAIN CUMRENT (AMPERES) 100 Yos. ORAIN FO SOUACE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 6 a i iF a ty Vos. ORAIN TO SOUACE VOLTAGE (VOLTS) Fig. 3 = Typical Saturation Characteristics 2 5 1o-4 2 5 103 10 lg, DRAIN CURRENT (AMPERES) ip, DRAIN CURRENT (AMPERES) a ' 2 3 a 8 Vas. GATE TO SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics OPERATION iN THIS AREAIS LIMITED 8Y Aostont . ye tSOOC AK, Ainge * 9.02 Fe Vpg. ORAIN-TO.SQUACE VOLTAGE (VOLTS! Fig. 4 Maximum Safe Operating Area boty a 8 1, DUTY FACTOR, D= t . 2, FER UNIT SASE = Ai = 3.12 DEG. CAN, 2 Tye Te Pow Tel. 2. 5 10-1 7 5 10 2 $ 10 1y, SQUARE WAVE PULSE QUAATION {SECONDS) Fig. 5 Maximum Effective Transient Thermal Impadance, Junction-to-Cate Vs, Pulse Duration 309ni 3875081 GE SOLID STATE Ol DEM 3875081 Standard Power MOSFETs Oo1e3n7 9 ff IRF720, IRF721, IRF722, IRF723 Wo Purse 1 t os > lofon) * Boston} - ww Ui. TRANSCONDUCTANCE (StEMEWS) o 3 = s ior. REVERSE ORAIN CURRENT (AMPERES) a 5 Tye 2 1 2596 19 ' z 3 5 6 0 1 2 3 Ip DRAIN CUARENT {AMPERES) Vgp. SOURCE-T0 GRAIN VOLTAGE iVOLTS} Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 ~ Typical Source-Drain Diode Forward Voltage 128 a w g we = 2 1a 3 4S a = & = a 2 < Bear 38 108 ost en oN ss 1 3 < os z 32 S&= os BE os Beto Zz < 2 5 = = 5 & Vas + tov 4 ons B oe ge 15a = 2 7s 02 40 a 40 80 120 tea 40 40 40 120 Ty JUNCTION TEMPERATURE [9C) 1), JUNCTION TEMPERATUAE [C} Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature oO Ved Mie = Cy 4 Cog. Cas = Ch * Ops g Cy C, $ Cou * Cat CE 2 z ou" Cds" Ty i Uyg 3 2 wlagt Cg 5 Zz | 2 z = 5 figs 3 < 2 & & a e a ft . & 3 > Ign tA FOR TEST CIRCUIT Cus 0 19 20 30 40 so a 4 12 16 20 Vos. ORAIN 10 SOURCE VOLTAGE (VOLTS) Qo, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Orain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 310 ae T-39-11O1 de ff sa7soa1 OO183b4 Q | a 3875081 GE SOLID STATE. O1E 18368 D 7-39-11 = Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 5 Rostanp MEASURED WITH CURRENT PULSE OF s 2 dss DURATION, EHETIAL Tp 259C (HEATING = EFFECT OF 20 ps PULSE IS MINIMAL } 63 a . 2 / 4 z Ba f; 3 Vgge lov c 3 g Vgg *20V z 31 = = = - 3 . 2 z? e 2 a z z _ 3 a 1 $1 a J 0 q 2 6 ' 10 2 B 50 By 100 12 180 tp. ORAIN CURRENT (AMPERES; Tg, CASE TEMPERATURE {C} Fig. 12 Typical On-Resistance Vs. Drain Currant Fig, 13 Maximum Orain Current Vs. Case Temperature 40 T | whe - - i- 44 1 _ wpe) -f. 4 4 : = ! 1 3 2 i t ft 4 3 Poi < = 20 - bt a! NX a = go NN 6 & | . a 10 \ 5 NN a oot 0 soo Tr CASE TEMPERATURE (C) Fig, 14 Power Vs. Temperature Derating Curve VARY I, TO ORTAIN REQUIAEO FEAR A, 1 = 058Q55 e* 0 758Vos5 \ \.----e Fig. 15 Clamped Inductive Test Circuit Fig. 16 Ciamped Inductive Waveforms o op CURRENT {USOLATEO ADJUST A, OE; > AEGULATOR SUPPLY) TO OBTAIN SPECIFIED ty SAME TYPE , 12v T OUT. gaTTeny | T PULSE GENERATOR r TQ SCOPE our HIGH FREQUENCY SHUNT Fig. 17 Switching Time Test Circuit | | { 1Sma Q _oee Vos Ig 19 CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 311