TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472
Devices Qualified Level
2N6350 2N6351 2N6352 2N6353
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N6350
2N6352 2N6351
2N6353 Units
Collector-Emitter Voltage VCER 80 150 Vdc
Collector-Base Voltage VCBO 80 150 Vdc
Emitter-Base Voltage VEBO 12
6.0 Vdc
Vdc
Base Current IB 0.5 Adc
Collector Current IC 5.0
10(1) Adc
Adc
2N6350
2N6351 2N6352
2N6353
Total Power Dissipation @ TA = 250C
@ TC = 1000C PT 1.0(2)
5.0(3) 2.0(4)
25(5) W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol 2N6350
2N6351 2N6352
2N6353 Unit
Thermal Resistance, Junction-to-Case RθJC 20 4.0 0C/W
1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50%
2) Derate linearly @ 5.72 mW/0C above TA > 250C
3) Derate linearly @ 50 mW/0C above TC > 1000C
4) Derate linearly @ 11.4 mW/0C above TA > 250C
5) Derate linearly @ 250 mW/0C above TC > 1000C
2N6350, 2N6351
TO-33*
2N6352, 2N6353
TO-24* (TO-213AA)
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 25 mAdc, RB1E = 2.2 kΩ, RB2E = 100 Ω 2N6350, 2N6352
2N6351, 2N6353
V(BR)CER
80
150
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Breakdown Voltage
IEB = 12 mAdc, Base 1 Open
IEB = 12 mAdc, Base 2 Open
V(BR)EBO
6.0
12
Vdc
Collector-Emitter Cutoff Current
VEB1 = 2.0 Vdc, RB2E = 100 Ω, VCE = 80 Vdc 2N6350, 2N6352
VEB1 = 2.0 Vdc, RB2E = 100 Ω, VCE = 150 Vdc 2N6351, 2N6353
ICEX
1.0
1.0
µAdc
ON CHARACTERISTICS (6)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 Ω 2N6350, 2N6352
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 Ω 2N6351, 2N6353
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
hFE
2,000
2,000
400
1,000
1,000
200
10,000
10,000
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, RB2E = 100 Ω, IB1 = 5.0 mAdc 2N6350, 2N6352
IC = 5.0 Adc, RB2E = 100 Ω, IB1 = 10 mAdc 2N6351, 2N6353
VCE(sat)
1.5
2.5
Vdc
Base-Emitter Voltage
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
VBE1(on)
2.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, RB2E = 100 Ω; f = 10 MHz
hfe
5.0
25
Output Capacitance
VCB1 = 10 Vdc, 100 kHz ≤ f ≤ 1.0 MHz, Base 2 Open
Cobo
120
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 5.0 Adc (See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
ton 0.5 µs
Turn-Off Time
VCC = 30 Vdc; IC = 5.0 Adc (See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
toff 1.2 µs
SAFE OPERATING AREA
DC Tests
TC = +1000C, 1 Cycle, t ≥ 1.0 s, tr + tf = 10 µs, RB2E = 100 Ω (See fig 6 for 2N6350, 2N6351)
Test 1
VCE = 1.5Vdc, IC = 3.3 Adc 2N6350, 2N6351
Test 2
VCE = 30 Vdc, IC = 167 mAdc 2N6350, 2N6351
Test 3
VCE = 80 Vdc, IC = 35 mAdc 2N6350
Test 4
VCE = 150 Vdc, IC = 13 mAdc 2N6351
TC = +1000C, 1 Cycle, t ≥≥ 1.0 s, tr + tf = 10 µµs, RB2E = 100 ΩΩ (See fig 7 for 2N6352, 2N6353)
Test 1
VCE = 5.0Vdc, IC = 5.0 Adc 2N6352, 2N6353
Test 2
VCE = 10 Vdc, IC = 2.5 Adc 2N6352, 2N6353
Test 3
VCE = 80 Vdc, IC = 95 mAdc 2N6352
Test 4
VCE = 150 Vdc, IC = 35 mAdc 2N6353
(6) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
