LOE >) M@M@ 8235605 0045920 639 MBSIEG SIEMENS IGBT Module Preliminary Data Voge = 1000 V I, =400Aat T,= 25C I, =300Aat 7, =80C @ Power module @ Single switch @ Including fast free-wheel diodes @ Package with insulated metal base plate @ Package outlines/Circuit diagram: 4 Type Ordering Code BSM 300 GA 100 D C67076-A2000-A2 Maximum Ratings SIEMENS AKTIENGESELLSCHAF T+ 39-25 BSM 300 GA 100 D VM115271 Parameter Symbol Values Unit Collector-emitter voltage Vor 1000 Vv Collector-gate voltage, Reg = 20 kQ Voor 1000 Gate-emitter voltage Voe +20 Continuous collector current, Tp = 25 C Io 400 A Te = 80C 300 Pulsed collector current, Tr = 25 C T 5 puts 800 Tg = 80C 600 Operating and storage temperature range T,, Tig - 55... + 150 c Power dissipation, 7, = 25 C Prot 2500 Ww Thermal resistance, chip-case Rac < 0.05 KAV Insulation test valtage*), = 1 min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 55/150/56 See chapter Package Outline and Circuit Diagrams. 2 Ingulation test voltage between collector and metal base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492 1. Semiconductor Group 284bOE D MM 8235605 0045921 575 MESIEG BSM 300 GA 100 D SIEMENS SIEMENS AKTIENGESELLSCHAF Electrical Characteristics at 7 = 25 'C, unless otherwise specified. Parameter Symbol Values min. | typ. | max. Unit Static Characteristics Collector-emitter breakdown voltage Visayces | Vee =0, = 5.6mA ' 1000 Gate threshold voltage Voceny Voe = Vee, fe = 20 mA 4.8 5.5 6.2 Collector-emitter saturation voltage Voe teat) Voe=15V, 6 =300A T, =25C - T, =150C - 2.8 4.0 3.3 4.5 Zero gate voltage collector current les Vee = 1000 V, Vee = 0 T, =25C - 7, =125C - 5500 LA Gate-emitter leakage current lees Voe = 20 V, Vop = 0 - 100 nA AC Characteristics Forward transconductance Lis 108 Voe = 20 V, = 300A Input capacitance Cis - Vor = 25 V, Vg = 0, f= 1 MHz 44000 Output capacitance, Veg = 0 Coss - Vor = 25 V, Voe = 0, f= 1 MHz 3400 Reverse transfer capacitance Ges - Vee = 25 V, Vee = 0, f= 1 MHz 1400 pF Semiconductor Group 285LOE D MM 8235605 O04S9ee 401 ME SIEG SIEMENS BSM 300 GA 100 D SIEMENS AKTIENGESELLSCHAF Switching Characteristics atT, = 125 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. Resistive Load Turn-on delay time ta ion) ns Voc = 600 V, Vaz = 15 V, = 300A Rg (on) = 3-3 Q Rg on) = 3-3 2 130 220 270 Rise time t, Voc = 600 V, Veg = 15 V, lp = 300A Rg ony = 3-3 Q, Rg of) = 3.3 D - 650 - Turn-off delay time ta tot Voc = 600 V, Vee = 15 V, = 300A Rg fon) = 3-3 Q, Rg iat) = 3.3. 2 - 850 - Fall time ty Voc = 600 V, Veg = 15 V, = 300A Rg ony = 3-3 Q, Rg jon) = 3.3 Q - 500 - Inductive Load Turn-on delay time ts (on) ns Voc = 600 V, Veg = 15 V, , = 300A Ry tony = 3-3 Q, Rg oi) = 3.3 Q 130 220 270 Rise time t, Voc = 600 V, Voge = 15 V, = 300A Rg jon) = 3.3 Q, Rg ory = 3.3 Q 70 120 170 Turn-off delay time ta tot Veo = 600 V, Veg = 15 V, = 300A Rg fon) = 3.3 Q, Rg to = 3.3. Q 630 850 1000 Fall time ui Voc = 600 V, Vee = 15 V, fp = 300A Rg for) = 9.3 Q, Rog on = 3.39 Q 75 110 130 Turn-off loss (Eon = Eons + Lot 2) Ear - 24 - mWs Voc = 600 V, Veg = 15 V, le = 300A Eote - 14 - Ry on) = 3.3. Ry on) = 3.3.2 Semiconductor Group 286LOE D MM 8235605 0045923 348 MBSIEG SIEMENS BSM 300 GA 100 D SIEMENS AKTIENGESELLSCHAF Electrical Characteristics at T= 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. | max. Free-Wheel Diode Diode forward voltage Ve Vv k =300A, Vag = 0 T, =25C - 2.0 - T, =125C - 1.6 - Reverse recovery time tr ys & =300A, V,=600V Vor = 0, di/dt = 800 A/us T, =125C ~ 0.5 - Reverse recovery charge On uc fk =300A, Vp =600V Vee = 0, di-/dt = - 3000 Ais T, =25C - 18 - T, =125 _ 54 - Soft factor - k& =300A, Vp =600V Vee = 0, di-/dt = 3000 A/us T, =125C - 1 - Thermal resistance Risc - ~_ 0.18 K/iW Chip-case Semiconductor Group 287LOE D MM 8235605 0045924 284 MBSIEG SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 300 GA 100 D Characteristics at 7, = 25 C, unless otherwise specified. Power dissipation P,,, = f (Tc) parameter: T, = 150 C S1100066 3000 Ww Prot 2000 1000 0 6 20 40 60 80 100 120 C 160 ee Typ. output characteristics /, = f (Vce) parameter: , = 80 ps, 7, < 25 C S1100259 500 x A Yee = 20V 18V 16V 15V 14V 12V 10V fe 400 300 200 100 Semiconductor Group Safe operating area /,, = f (Vce) parameter: single pulse, 7, = 25 C T,< 150 C SHOOO6S p= 45s 5 10? 5 105 Vv 104 a -_ be Typ. output characteristics /, = f(Vce) parameter: f, = 80 us, 7, < 125 C 500 ~ A Ke = 20V 18V 16V 15V 14V 12V 10V SHO0260 fe 400 300 200 100 288BOE D MM 4235605 0045925 110 MESIEG SIEMENS Reverse biased safe operating area Io =f (Vee), parameter: T, = 125 C, Vee = 15. V, Roo = 3.3 Q, L (parastic inductance, module) < 50 nH SI100401 je - wee ji pt | | ttii Popp - lows [ tro be i, 2+ pp | | Lo | | I 1 ri | po} te. ba}. te i io! I ' i. a ae , | , | 1 ro 1 ~-Lo Pee yp pe | 1 te 4 fy ee po} _ pop a 4- = 1 Me + = = aL aa fel | Hoe on ho ee re ul a - 0 500 1000 1500 Neg Transient thermal impedance Zinc =f (tp), parameter: D = 1,/T 51100073 Semiconductor Group SIEMENS AKTIENGESELLSCHAF BSM 300 GA 100 D Safe operating area, short circuit J. =f (Voc), Vag = 15 V T, S$ 150 C, fg $10 us, L < 80 nH $100205 12 T Few Tege 10 | 8 6 4 79 C | Note: Vy, | Allowed numbers of 2 C short circuit< 1000 - *Time between short E circuit.>1s E pL | 0 200 400 600 800 1000V 1200 Veg Typ. on-state characteristics Vee (say =f (Vee), parameter: Io, T $1100070 12 v Voetsat) 150A 300A 7, =25C 10 Tl, =7, =150C 5 10 15 Vv 20 MeebOE D M@@ 8235605 0045926 057 MESIEG SIEMENS BSM 300 GA 100 D OSTEMENS AKTIENGESELLSCHAF Collector current /, =f (Tc) parameter: Vee 2 15 V, T, = 150C $i00071 500 -+ 7 en ee poporoe Ft | Al I i 400 300 200: 100 0 50 100 C 6150 7. c Typ. transfer characteristics /, = f (Vcc) parameter: f, = 80 us, Voe = 20 V a | Ee | 1100069 400 200 / ~ Vee Semiconductor Group Typ. capacitances C =f (Vcc) parameter: Vge = 0, f= 1 MHz $1}00072 10? nF 5 Oss 10 10 10 0 10 20 30 Vv 40 Ne Typ. gate charge Vor, Vaz =f (Qe) $NOO263 1000 20 v Uf y 400V ff Yor f 800 + 600V | 16 800V 600 | W 12 _j 4 400 a + | | TS [ 200 - _- 0 800 1600 2400 3200 nC 4000 05 290BOE D MM 6235605 0045927 T93 MBSIEG SIEMENS BSM 300 GA 100 D STEMENS AKTIENGESELLSCHAF Typ. switching time =f (Ra) Inductive load, parameter: T, = 125 C Vee = 600 V, Veg = +15 V, 16 = 300A 1 sito0261 10 us 5 t fa(off) 10 1o7! 10 5 to! 5 9 107 Semiconductor Group Forward characteristics of fast recovery reverse diode /, =f (V;) parameter: 7, S1100265 600 A Ir 500 400 300 200 100 0 | 2 VY 3 ~ Vp Typ. switching time = f (/,) inductive load, parameter: T, = 125 C Voge = 600 V, Veg = 15 V, Rg = 3.32 S1100262 10 ps 5 f 107! 10? 60 120 180 240 A 300 _~ c