2N3663
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR) CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 12 V
V(BR) CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V
V(BR)EBO Emitt er-Base Breakdown Voltage IE = 100 µA, IC = 0 3.0 V
ICBO Collector-Cutoff Current VCB = 15 V, IE = 0 0.5 µA
IEBO Emitter-Cutoff Current VEB = 2.0 V, I C = 0 0.5 µA
ON CHARACTERISTICS*
hFE DC Current Gain VCE = 10 V, IC = 8.0 mA 20
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V,
f = 100 MHz
700 2100 MHz
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.8 1.7 pF
rb’CCCollector Base Time Constant IC = 8. 0 mA, VCE = 10 V,
f = 79.8 MHz
80 pS
FUNCTIONAL TEST
NF Noise Figure IC = 1.0 mA, VCE = 6.0 V,
f = 60 MHz, Rg = 400 Ω
6.5 dB
Gpe Amplifier Power Gain IC = 6.0 mA, VCE = 12 V,
f = 200 MHz
1.5 dB