BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC2859
Document number: BL/SSSTC100 www.galaxycn.com
Rev.A 1
FEATURES Pb
z Power dissipation：PC=150mW.
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC2859 WO/WY/WG SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current -Continuous 500 mA
PCCollector Dissipation 150 mW
Tj,Tstg Junction and Storage Temperature -55~125 ℃
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC2859
Document number: BL/SSSTC100 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 B30 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V
Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain hFE
VCE=1V,IC=100mA
VCE=6V,IC=400mA
70
25
400
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA B 0.1 0.25 V
Collector output capacitance Cob VCB=6V,IE=0,f=1MHz 7 pF
Transition frequency fTVCE=10V, IC= 1mA 300 MHz
CLASSIFICATION OF hFE(1)
Rank O Y G
Range 70-140 120-240 200-400
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC2859
Document number: BL/SSSTC100 www.galaxycn.com
Rev.A 3
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
G
K
H
J
E
D
C
B
A
PACKAGE INFORMATION
Device Package Shipping
2SC2859 SOT-23 3000/Tape&Reel
