o
a
80-VOLT OPTOELECTRONIC COUPLER
. . . Gallium Arsenide LED optically coupled to aSilicon Photo
Darlington Transistor designed for applications requiring electrical
isolation, high breakdown voltage, and high current transfer ratios.
Characterized for use astelephony relay drivers but provides excellent
performance in interfacing and coupling systems, phase and feedback
controls, solid state relays, and general purpose switching circuits.
.High Transfer Ratio @Output =50mA–
500% –MOC8050
300% –MOC8030
@High Collector- Emitter Breakdown Voltage–
BVCEO =80 Vdc (Min)
.High Isolation Voltage —
Vlso =7000 Vac Peak
.Excellent Stabi Iity Over Temperature ,;:;$
*
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.Economical Dual-In-Line Package ...$ ,hij
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MAXIMUM RATINGS (TA =25°C unless otherwise noted. ).+~:~~’,’j.
‘!+~i
MOC8050
MOC8030
,,*.“.. >,,,.
Reverse Voltage VR I~.~~: volts
Forward Current –Continuous iF.~~ “’80 mA
Forward Current –Peak Amp
Pulse Width =300 ps, 2.0% DutV Cycle
Total Power Dissipation @TA =25°C $,,$pD+p 150 mW
Negligible Power in Transistor .t)l, ‘:~\\..\+.*+,‘
$*>... .,, .~,
Derate above 25°C ,.-JJ.>.:-+,:.
,(:?,::+:,,,..<
,+, ,$, .;.,,. ~2.0
,.., .,.... mW/°C L
PHOTO DARLINGTON TRANSISTOR ‘,~. ii.
l~:p< ~..<~.
*,:
Collector-Emitter Voltage .,.*,<, *-N.*-,.,.
‘~.:: VCEO 80 volts
s..
Emitter-Collector Voltage .%>a~b~. Y
,~.. ,,, VECO 5.0 volts
Collector Current –Continuous~$l !+$,:,,$]; Ic 150 mA
Total Power Dissipation @TA+,2~$~ pD 150 mW
“’i’:+.,+:{,.
Negligible Power in Diod$.$$,+ .,:, 2.0 mW/°C
3.3 mW/°C
St*@Qe’kwmperature Range Tstg -55 to +150
Sol&in’b Temperature (10s) —260 Oc
L...-. IIII
FIGURE 1 – DEVICE SCHEMATIC
1A
Y
/
I
STYLE 1:
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
PLANE
NOTES:
1. LEADS WITHIN 0.25 mm(0.010)
OIAMETER OF TRUE POSITION
AT SEATING PLANE AT
MAXIMUM MATERIAL
CONDITION.
2. OIMENSION “L” TO CENTER OF
LEAOS WHEN FORMEO PARALLEL.
CASE 730-01
lMOTOROLA INC., 1977 DS 2645 RI
~
LED CHARACTER ISTICS (TA =25°C unless otherwise noted.) =
Charatieristic SVmbol Min Tvp Max Unit
Reverse Leakage Current IR 0.05 10
(VR =3.0 V)
—PA
Forward Voltage vF 1.2 2.0
([F =10mA)
—volts
Capacitance c 100 —PF
I(vR=Ov, f=l.OMHz) III.$> I
PHOTO DAR LINGTON CHARACTERISTICS (TA =25°C and IF =O, unless otherwise notl
Charatieristic Svmbol Min Typ Max
Collector-Emitter Dark Current iCEO —15
(VCE =60V)
Collector-Emitter Breakdown Voltage BVCEO 80 q.~}l~~:,.+,
—volts
(lC=l.OmA)
,+.$”,:.)‘.?,*,S ,,8.
‘~i:
., ~,\-
.&.la.\
~..?,$.,~~}
Emitter-Collector Breakdown Voltage BVECO .,)$,
5.0 ‘v”_
(IE=IOO VA)
—volts
r$~i.*.<:.X
,.
a\‘:...’~:*
COUPLED CHARACTERISTICS (TA =25°C unless otherwise noted.) ,,>lr !<.
.I.:h::y.
.:r, ,,*
Characteristic ISvmbol Min IMax IUnit
Collector Output Current 1P mA I
(vcE=l.5v,lF=lomA) .“ !,s,
Mocao50 ~?’t+ —
Mocao30 ,:<,4M$$,}*. –
— —
*
Isolation Surge Voltage (1, 2), Vac 60 Hz Peak ac, 5Second <t,+.
Vlso . :;.. 7$0 –—Volts
Isolation Resistance (1) ,$’,,. .~.i+<,.~
—
(v= 500 v) ‘i;..$~ —1011 —Ohms
$~,.,a
..*..* .3,
Isolation Capacitance (1) :_’&. 0.8
(v= O, f=l.O MHz)
— —
“~’+ pF
,tT*#Yj>,.
.%.:
.$/ x.
SWITCHING CHARACTERISTICS -.,\‘*23,~~ji
~~e~a
,.,.,,
,.,,.,.,.,,,,
Turn-On Time (IF =10 mA, VCE =50 V, R2 =IOOQ) .. . .
:<,>,
?i. ton —13 —ps
Turn-Off Time (1F=10 mA, VCE =50 V, R2 =100~) \.t,’
-N+ toff —9.0 —ps
&
(1) For this test LED pins 1and 2are common and Photo Tr~’sis%r pins 4and 5are common. :0
650 ‘$,,,. +7<”
*“’”‘Y
,. ...,,+,l,>.
‘“k~.$ ,I
600 -. IF =lOmA
,,.. ....
350 \
300
250 \
200 \
1500 ,0 20 so ~. so ho ,0 *O 90 100
TEMPERATURE (OC)
MOTOROLA
104
101
FIGURE 3 – COLLECTOR EMITTER DARK CURRENT
varsus TEMPERATURE
I I I I1Y1!1
/1
!! I I1/ II[
xI
!!Z! I!
/
/
/
/ ‘
/
x
o 10 20 30 40 50 60 70 80 go 100
TEMPERATURE IN ‘CENTIGRADE
Semiconductor Products Inc.
●
●
o
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TYPICAL ELE&filCAL CHARACTERISTICS
COLLECTOR CURRENT versusCOLLECTOR-EMITTER VOLTAGE
FIGURE 4- MOC8050
“o 0.2 0.4 0.6 0,8 1.0 1.2 1.4 1.6 1.8 2.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80
70
z
&60
10
0
FIGURE 5 – MOC8030
5.0 mh
2.0 mA
o1.0 1.2 1.4 1.6 1.8 2.0
:~c#$~,LLEcTOR-EMlnER VOLTAGE (VOLTS)
at:):.\.*,*\,, “<..:.
COLLECTOR CURRENT versusCOLLECTQ@~M~~TER VOLTAGE
(at 25° and 70°cti’ ~“ap$’s’
FIGURE 6- MOC8050 ~~.:
*~.:-, FIGURE 7 – MOC8030
VCE, coLLE~$$},P@ voLTAGE (VOLTS) VCE COLLEHOR-EM17TER VOLTAGE (VOLTS)
-.:..,?..
,.*‘~;
-.,.~~.. .:.
‘~$.:>$,/,>
~,l\>J’ :COLLECTOR CURRENT versus DIODE CURRENT
,. .:~.
---1.0 2.0 3.0 5.0 7.0 10 20 30 50
IF, DIOOE CURRENT (mA)
MOTOROLA
70 100
FIGURE 9 – MOC8030
200
100
z
=
+
z
u
K
u
3
v
m
0
~
y 10
A
0
Q
g
2.01.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IF, DIODE CUR RENT (mA)
Semiconductor Products
*. *
—
m
MOTOROLA
vBOX 20912 .
9542.1PRINTEDJNuSA%77 IUPERWLLITfiO865959
Semiconductor Products Inc. —
PHOENIX. ARIzONA 8S036 .ASUBSIDIARY OF MOTOROLA INC.
lm DS-2645-R1
