MBR3030PTMBR3060PT VISHAY 30A Schottky Barrier Rectifier Features @ Schottky barrier chip @ Guard ring die constuction for transient protection @ Low power loss, high efficiency @ High current capability and low forward voltage drop @ High surge capability @ Foruse in low voltage, high frequency inverters, free wheeling, and polarity protection application @ Plastic material - UL Recognition flammability classification 94V-0 Absolute Maximum Ratings Vishay Lite-On Power Semiconductor Tj = 25C Repetitive peak reverse voltage MBR3030PT | Varn 30 Vv =Working peak reverse voltage MBR3035PT | =Vrawm 35 Vv =DC Blocking voltage MBR3040PT =VR AO V MBR3045PT 45 Vv MBR3050PT 50 Vv MBR3060PT 60 Vv Peak forward surge current lesm 200 A Average forward current Tce=125C IFay 30 A Junction and storage temperature range T=Tstg_ | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage Ir=30A, Tc=25C MBR3030PT Ve 0.76 Vv I-=20A, Tc=125C MBR3045PT Ve 0.6 V IF=30A, Tc=25C MBR3050PT Ve 0.8 Vv I-=20A, Tc=125C MBR3060PT Ve 0.65 | V Reverse current Tce=25C MBR3030PT IR 1.0 mA To=125C MBR3045PT IR 60 | mA Tce=25C MBR3050PT IR 5.0 | mA To=125C MBR3060PT IR 100 | mA Diode capacitance VR=4V, f=1MHz Cp 700 pF Thermal resistance TL=const. MBR3030PT Rthuc 1.4 KAW junction to case MBR3045PT TL=const. MBR3050PT Rthuc 2.0 KAW MBR3060PT Voltage rate of change dvV/dt 10000 | V/us ( Rated Vp ) Rev. A2, 24-Jun-98MBR3030PTMBR3060PT Vishay Lite-On Power Semiconductor Characteristics (Tj = 25C unless otherwise specified) 30 4000 24 18 1000 12 0 100 leay Average Forward Current (A) C,, Diode Capacitance ( pF ) 0 50 100 150 0.1 1.0 10 100 15383 Tamb Ambient Temperature ( C ) 15386 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 1 7.28 100 IF Pulse Width = 300 ps ~ T= 125C -_ 2% Duty Cycle < < E ~ ~ 10 6 5 8 8 g MBR3030PT g 10 2 MBR3045PT g o oO uw 10 a MBR3050PT I 0.1 = MBR3060PT - T)= 25C 0.1 0.01 0 0.2 04 0.6 0.8 0 20 40 60 80 100 120 140 15384 Ve Forward Voltage ( V ) 15387 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage < 300 8.3 ms Single Half-Sine-Wave Ty JEDEC method 250 + 5 Tj) = 25C o 200 2 a B 150 w N = TN o hs. uw ~=-:100 g ~ o | v 50 = fe = 0 1 10 100 15385 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98MBR3030PTMBR3060PT VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm B _H A J ane ! Oo 4 & G technical drawings a according to DIN specifications 14470 Case: molded plastic Polarity: as marked on body Approx. weight: 5.6 grams Mounting position: any Marking: type number TO-3P Dim Min Max A 3.20 3.50 B L59 5.16 C 20.80 21.30 D 19.70 20.20 E 2.10 2.40 O 0.51 0./6 H 15.90 16.40 J 1.70 2.10 K 63.10 03,30 L 3.50 45] M 5.20 5.10 N 4.42 1.22 P 2.90 3.30 R 11.70 12.80 5 4.30 Typical ALL Dimensions in mm Rev. A2, 24-Jun-98MBR3030PTMBR3060PT Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98