Discrete POWER & Signal Technologies EE MARNIE ES TERS ne SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. Absol ute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 60 Vv Veso Collector-Base Voltage 60 Vv VeBo Emitter-Base Voltage 5.0 Vv Io Collector Current - Continuous 1.2 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Characteristic Max Units BCP52 Pp Total Device Dissipation 15 WwW Derate above 25C 12 mWw/C Rosa Thermal Resistance, Junction to Ambient 83.3 oCAV 1997 Fairchild Semiconductor Corporation oSd0dElectrical Characteristics PNP General Purpose Amplifier (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Visriceo Collector-Emitter Breakdown Voltage lo = 10 mA, Ig = 0 60 Vv VeerjcBo Collector-Base Breakdown Voltage lo = 100 LA, Ie = 0 60 Vv Visr)eB0 Emitter-Base Breakdown Voltage le = 10 pA, Ic = 0 5.0 Vv loBo Collector-Cutoff Current Veg = 30 V, IE= 0 100 nA Ves = 30 V, le = 0, Ta = 125C 10 HA leBo Emitter-Cutoff Current Ves = 5.0 V, Ic=0 10 HA ON CHARACTERISTICS Hee DC Current Gain Io = 5.0 MA, Voz = 2.0 V 25 lo = 150 MA, Vce= 2.0 V 40 250 le = 500 mA, Voce =20V 25 Veeisat Collector-Emitter Saturation Voltage lc = 500 mA, Ip = 50 mA 0.5 Vv Vee(on) Base-Emitter On Voltage lo = 500 mA, Vcgp = 2.0 V 1.0 Vv Typical Characteristics 400 300 200 100 - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current VceE=5V 0.01 0.1 hre I> - COLLECTOR CURRENT (A) o fF FP FS 8 yb BR GD OD Voesar COLLECTOR-EMITT ER VOLTAGE (V) oo S Collector-Emitter Saturation Voltage vs Collector Current B =10 0.1 1 1.5 I - COLLECTOR CURRENT (A) oSd0dPNP General Purpose Amplifier (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current B =10 i Vaesar: BASE-EMITTER VOLTAGE (V) 10 100 I, - COLLECTOR CURRENT (mA) 1000 Collector-Cutoff Current vs Ambient Temperature Qo oO Vog = 40V to logo COLLECTOR CURRENT (nA) 25 50 76 100 125 150 Ta - AMBIENT TEMPERATURE (C) Gain Bandwidth Product vs Collector Current nN ao ao ce = 10V nN Oo oO Qo oO ao ao Qo 10 100 Ic - COLLECTOR CURRENT (mA) 1000 hree- GAIN BANDWIDTH PRODUCT (MHz) a 3S E-EMITTER ON VOLTAGE (V) o mn Veeous BAS Coso - COLLECTOR-BASE CAPACITANCE (pF) Pp - POWER DISSIPATION (W) o a o fon) o nD Bb o wo 3 y 3 fo Base-Emitter ON Voltage vs Collector Current Vog= BV 10 100 |, - COLLECTOR CURRENT (mA) 1000 Collector-Base Capacitance vs Collector-Base Voltage F = 1.0 MHz fo 4 8 12 16 20 24 28 Vcp COLLECTOR-BASE VOLTAGE (V) Power Dissipation vs Ambient Temperature 0 2 50 75 100 125 150 TEMPERATURE (C) oSd0dTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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