tal GlazeTM Cylindrical Metal GlazeTM Cylindrical cial Official Size Size Power Resistor wer Resistor Metal GlazeTM Cylindrical Metal GlazeTM thick film element fired at 1000C to solid ceramic substrate CHP1X Series 0.1 ohm to 10K ohm Size *Official * Outstanding surge capacity Resistor to 10K ohm 1W in a 1/2W package (2010 footprint) *Power 150C maximum operating temperature ding surge * capacity Series CHP1X Series 1/2W package (2010 footprint) s 0.1 ohm to 10K ohm maximum soperating Outstandingtemperature surge capacity High Purity ceramic core for optimal thermal distribution Metal GlazeTM thick film element fired at 1000C to solid ceramic substrate High Purity ceramic core for optimal thermal distribution High temperature dielectric coating 60/40High Solder over temperature nickeldielectric barriercoating s 1W in a 1/2W package (2010 footprint) s 150C maximum operating temperature 60/40 Solder over nickel barrier 2 2 Environmental Data onmental Data Characteristics Temperature Coefficient Characteristics Thermal Shock Low Temperature Operation ure Coefficient Shock Short Time Overload High Temperature Exposure perature Operation Resistance to Bonding Exposure me OverloadSolderability Moisture Resistance perature Exposure Life Test ce to Bonding Exposure Terminal Adhesion Strength ility Resistance to Board Bending Resistance General GeneralNote Note Maximum Change As specified Maximum Change 0.5% + 0.01 ohm 0.25% + 0.01 ohm As specified 0.5% + 0.01 ohm 1% for R>100K ohm 0.5% + 0.01 ohm 0.5% + 0.01 ohm 0.25% + 0.01 ohm 0.25% + 0.01 ohm 0.5%95% + 0.01 ohm minimum coverage 1% for R>100K ohm 0.5% + 0.01 ohm 0.5% + 0.01 ohm 0.3% + 0.01 ohm + 0.01 ohm 0.25% +1% 0.01 ohm no mechanical damage 1% + 0.01 ohm no mechanical damage 95% minimum coverage Test Method MIL-R-55342E Par 4.7.9 (-55C + 125C) Test Method MIL-R-55342E Par 4.7.3 (-65C + 150C, 5 cycles) MIL-R-55342E Par 4.7.4 @ (-55C working voltage) MIL-R-55342E Par(-65C 4.7.9 + 125C) MIL-R-55342E Par 4.7.5 2.5 x P x R for 5 seconds MIL-R-55342E Par 4.7.3 (-65C + 150C, 5 cycles) MIL-R-55342E Par 4.7.6 (+150C for 100 hours) MIL-R-55342E Par(Reflow 4.7.4soldered (-65Cto @ working MIL-R-55342E Par 4.7.7 board at 260C for 10 seconds) voltage) MIL-R-55342E MIL-STD-202, MethodPar 208 4.7.5 (245C for 5 seconds) 2.5 x P x R for 5 seconds MIL-R-55342E Par 4.7.8 (10 cycles, total 240 hours) MIL-R-55342E Par 4.7.6 (+150C for 100 hours) MIL-R-55342E Par 4.7.10 (2000 hours @ 70C intermittent) MIL-R-55342E 4.7.7of (Reflow soldered 1200 gram push from Par underside mounted chip for 60 seconds 260C for 10 seconds) to board at Chip mounted in center of 90mm long board, deflected 5mm so as to exert pull on chip contacts for 10 seconds MIL-STD-202, Method 208 (245C for 5 seconds) 0.5% + 0.01 ohm MIL-R-55342E Par 4.7.8 (10 cycles, total 240 hours) 0.3% + 0.01 ohm MIL-R-55342E Par 4.7.10 (2000 hours @ 70C intermitt IRC reserves the right to make changes in product specification without notice or liability. TTinformation electronics reserves theown right changes in product All is subject to IRC's datato andmake is considered accurate at time ofspecification going to print. without notice or liability. A subsidiary of chip for 1% + 0.01 ohm All information is subject to TT electronics' own data and is considered accurate at time of going to print.1200 gram push from underside of mounted TT electronics plc www.bitechnologies.com www.irctt.com www.welwyn-tt.com AdhesionWire Strength and Film Technologies Division s 3OUTH 3TAPLES 3TREET s #Orpus Christi TeXAS 53! no mechanical damage 60 seconds #(08 3ErIES )SSUE 3EPTEMBER 3HEET OF Telephone: s Facsimile: s Website: www.irctt.com (c) TT electronics plc ce to Board Bending 1% + 0.01 ohm 01.12 deflected Chip mounted in center of 90mm long board, -ETAL 'LAZE #YLINDRICAL /FlCIAL 3IZE CHP1X Series 0OWER 2ESISTOR Metal GlazeTM Cylindrical Official Size Power Resistor 2EPETITIVE 3URGE #URVE 0OWER $ERATING #URVE 0EAK 0OWER WATTS OF 2ATED 0OWER % % % % % 3URGE OR 0ULSE $URATION 3ECONDS !MBIENT 4EMPERATURE # 4EMPERATURE 2ISE #HART .ON,OW 2EPETITIVE 3URGE #URVE 4EMPERATURE 2ISE # 0EAK 0OWER WATTS 3OLDER *OINT !PPLIED 0OWER 7ATTS % 2ESISTOR (OT 3POT % % % % 3URGE OR 0ULSE $URATION SECONDS /RDERING $ATA 3AMPLE 0ART .O #(0 8 & )2# 4YPE #(0 8 4EMPERATURE #OEFlCIENT PPM PPM 2ESISTANCE 6ALUE OHMS AND GREATER &IRST SIGNIlCANT DIGITS PLUS TH DIGIT MULTIPLIER %XAMPLE OHMS OHMS OHMS ,ESS THAN OHMS 2 IS USED TO DESIGNATE DECIMAL %XAMPLE OHMS 2 OHM 2 OHMS 2 4OLERANCE # $ & ' * 0ACKAGING #ODE ",+ "ULK 2EEL 2EEL 7IRE AND &ILM 4ECHNOLOGIES $IVISION s 3OUTH 3TAPLES 3TREET s #ORPUS #HRISTI 4EXAS 53! 4ELEPHONE s &ACSIMILE s 7EBSITE WWWIRCTTCOM #(08 3ERIES )SSUE 3EPTEMBER 3HEET OF General Note TT electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT electronics' own data and is considered accurate at time of going to print. www.bitechnologies.com www.irctt.com www.welwyn-tt.com (c) TT electronics plc 01.12