MOTOROLA Order this document by 2N4032/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors LAST SHIP 21/03/00 2N4032 2N4033 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 3 Rating Symbol 2N4032 2N4033 Unit Collector - Emitter Voltage VCEO - 60 - 80 Vdc Collector - Base Voltage VCBO - 60 - 80 Vdc Emitter - Base Voltage VEBO - 5.0 - 5.0 Vdc Collector Current -- Continuous IC - 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 0.8 4.56 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 4.0 22.8 Watts mW/C TJ, Tstg - 65 to + 200 C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 140 C/W Thermal Resistance, Junction to Case RqJC 25 C/W Operating and Storage Junction Temperature Range 2 1 CASE 79-04, STYLE 1 TO-39 (TO-205AD) LAST ORDER 23/09/99 LIFETIME BUY MAXIMUM RATINGS THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max - 60 - 80 -- -- - 60 - 80 -- -- - 5.0 -- -- -- -- -- - 50 - 50 - 50 - 50 -- - 10 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = - 10 mAdc) Collector - Base Breakdown Voltage (IC = - 10 mAdc) V(BR)CEO 2N4032 2N4033 V(BR)CBO 2N4032 2N4033 Emitter - Base Breakdown Voltage (IE = - 10 mAdc) Collector Cutoff Current (VCB = - 50 Vdc) (VCB = - 60 Vdc) (VCB = - 50 Vdc, TA = 150C) (VCB = - 60 Vdc, TA = 150C) Emitter Cutoff Current (VEB = - 5.0 Vdc) 1. Pulse Test: Pulse Width Vdc V(BR)EBO Vdc ICBO 2N4032 2N4033 2N4032 2N4033 IEBO Vdc nAdc Adc Adc v 300 ms, Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 2N4032 2N4033 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 2N4032,33 40 -- (IC = - 100 Adc, VCE = - 5.0 Vdc) 2N4032,33 75 -- (IC = - 100 mAdc, VCE = - 5.0 Vdc)(1) 2N4032,33 100 300 (IC = - 500 mAdc, VCE = - 5.0 Vdc)(1) 2N4032,33 70 -- (IC = - 1.0 Adc, VCE = - 5.0 Vdc)(1) 2N4032 2N4033 40 25 -- -- -- -- -- - 0.15 - 0.5 - 1.0 -- - 0.9 -- -- - 1.2 - 1.1 Characteristic Unit Collector - Emitter Saturation Voltage(1) (IC = - 150 mAdc, IB = - 15 mAdc) (IC = - 500 mAdc, IB = - 50 mAdc) (IC = - 1.0 Adc, IB = - 100 mAdc) hFE VCE(sat) 2N4032 Base - Emitter Saturation Voltage(1) (IC = - 150 mAdc, IB = - 15 mAdc) Base-Emitter On Voltage (IC = -1.0 Adc, VCE = -1.0 Vdc) (IC = - 500 mAdc, VCE = - 0.5 Vdc)(1) -- VBE(sat) Vdc VBE(on) 2N4032 Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Output Capacitance (VCE = -10 Vdc, f = 1.0 MHz) Cobo -- 20 pF Input Capacitance (VEB = - 0.5 Vdc, f = 1.0 MHz) Cibo -- 110 pF Small Signal Current Gain (IC = - 50 mAdc, VCE = -10 Vdc, f = 100 MHz) hfe 1.5 5.0 -- Storage Time (IC = - 500 mAdc, IB1 = IB2 = - 50 mAdc) ts -- 350 ns Turn-On Time (IC = - 500 mAdc, IB1 = - 50 mAdc) ton -- 100 ns tf -- 50 ns SWITCHING CHARACTERISTICS Fall Time (IC = - 500 mAdc, IB1 = IB2 = - 50 mAdc) 1. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 LIFETIME BUY DC Current Gain (IC = - 100 mAdc, VCE = - 5.0 Vdc, @ - 55C)(1) LAST SHIP 21/03/00 ON CHARACTERISTICS 2N4032 2N4033 SWITCHING TIME EQUIVALENT TEST CIRCUITS 2 < t1 < 500 s 2 < t2 < 5.0 ns 2 < t3 > 1.0 s DUTY CYCLE = 2.0% RC 59 + 8.8 V SCOPE SCOPE 0 200 -10.85 V 59 RC 200 11.2 V RB t1 PULSE WIDTH = 200 ns RISE TIME 2.0 ns DUTY CYCLE 2.0% t3 t2 RB 1N916 + 3.0 V TRANSIENT CHARACTERISTICS 25C 100C 100 10 7.0 5.0 50 Ceb VCC = - 30 V IC/IB = 10 3.0 20 10 Ccb 5.0 Q, CHARGE (nC) 30 1.0 0.7 0.5 0.3 2.0 0.2 1.0 - 0.1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 - 5.0 - 10 - 20- 30 - 50 REVERSE VOLTAGE (VOLTS) 0.1 - 10 - 100 QA - 20 - 30 - 50 - 100 - 200 - 300 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 70 70 IC/IB = 10 20 10 VBE(off) = 2.0 V - 1000 VCC = - 30 V IC/IB = 10 50 VBE(off) = 0 V 7.0 5.0 - 10 - 500 Figure 4. Charge Data 100 30 QT 2.0 3.0 50 t, TIME (ns) Figure 2. Turn-Off t, TIME (ns) CAPACITANCE (pF) LIFETIME BUY Figure 1. Turn-On 30 20 10 7.0 - 20 - 30 - 50 - 70 - 100 - 200 - 300 - 500 - 700 - 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Delay Time Motorola Small-Signal Transistors, FETs and Diodes Device Data 5.0 - 10 - 20 - 30 - 50 - 70 - 100 - 200 - 300 - 500 - 700 - 1000 IC, COLLECTOR CURRENT (mA) Figure 6. Rise Time 3 LAST SHIP 21/03/00 + 2.0 V 0 - 30 V LAST ORDER 23/09/99 - 30 V 2N4032 2N4033 200 100 300 200 VCC = - 30 V 100 ts = ts - 1/3 tf 70 50 30 70 50 30 20 20 10 - 10 10 - 10 - 20 - 30 - 50 - 70 - 100 - 200 - 300 - 500 - 700 - 1000 IC, COLLECTOR CURRENT (mA) - 20 - 30 Figure 7. Storage Time - 200 - 300 - 500 - 700 - 1000 Figure 8. Fall Time SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 9.0 10 IC = -1.0 mA, RS = 100 9.0 -100 A, RS = 680 8.0 -10 A, RS = 7.0 k 7.0 6.0 5.0 RS = OPTIMUM SOURCE RESISTANCE 4.0 3.0 7.0 5.0 4.0 3.0 2.0 1.0 1.0 0.1 0.2 0.3 0.5 1.0 f, FREQUENCY (kHz) 2.0 3.0 5.0 -100 mA 6.0 2.0 0 0.01 0.02 0.03 0.05 -10 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) LIFETIME BUY - 50 - 70 - 100 IC, COLLECTOR CURRENT (mA) f = 1.0 kHz IC = -1.0 mA 0 50 10 100 Figure 9. Frequency Effects 200 300 500 1.0k 2.0k 3.0k 5.0k 10k RS, SOURCE RESISTANCE (OHMS) 20k 30k 50k Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship of the "h" parameters for this series of transistors. To obtain these curves, 4 units were selected and identified by number - the same units were used to develop curves on each graph. hie , INPUT IMPEDANCE (k OHMS) 300 200 h fe , CURRENT GAIN UNIT 4 100 70 50 3 2 1 30 20 15 - 0.1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain 4 - 5.0 - 10 LAST SHIP 21/03/00 VCC = - 30 V IC/IB = 10 IB1 = IB2 30 20 3 10 2 7.0 5.0 UNIT 1 4 3.0 2.0 1.0 0.7 0.5 0.3 - 0.1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 IC, COLLECTOR CURRENT (mA) - 5.0 - 10 Figure 12. Input Impedance Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 IB1 = IB2 IC/IB = 10 t f , FALL TIME (ns) t s, STORAGE TIME (ns) 1000 700 500 20 3 10 2 7.0 5.0 4 3.0 2.0 UNIT 1 1.0 - 0.1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 IC, COLLECTOR CURRENT (mA) - 5.0 - 10 30 20 10 7.0 5.0 3.0 4 2 3 2.0 1.0 - 0.1 UNIT 1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio - 5.0 - 10 Figure 14. Output Admittance hFE , DC CURRENT GAIN (NORMALIZED) STATIC CHARACTERISTICS 10 7.0 5.0 VCE = -1.0 V VCE = -10 V TJ = 175C 3.0 2.0 1.0 0.7 0.5 25C 0.3 0.2 0.1 - 1.0 - 2.0 - 3.0 - 5.0 - 55C - 7.0 - 10 - 20 - 30 - 50 - 70 IC, COLLECTOR CURRENT (mA) - 100 - 200 - 300 - 500 - 700 - 1000 Figure 15. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) LIFETIME BUY LAST SHIP 21/03/00 30 100 70 50 - 1.0 TJ = 25C - 0.8 - 0.6 IC = - 1.0 mA - 10 mA - 100 mA - 500 mA - 0.4 - 0.2 0 - 0.005 - 0.007 - 0.01 - 0.02 - 0.03 - 0.05 - 0.07 - 0.1 - 0.2 - 0.3 - 0.5 - 0.7 - 1.0 IB, BASE CURRENT (mA) - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 Figure 16. Collector Saturation Region Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 LAST ORDER 23/09/99 100 70 50 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 2N4032 2N4033 - 0.8 0 VBE(sat) @ IC/IB = 10 - 0.6 VBE(on) @ VCE = -1.0 V - 0.4 - 0.2 Figure 17. "On" Voltages IC, COLLECTOR CURRENT (AMP) LIFETIME BUY - 1.0 VB for VBE - 2.0 - 3.0 VCE(sat) @ IC/IB = 10 0 - 1.0 - 2.0 - 3.0 - 5.0 - 10 - 20 - 30 - 50 - 100 - 200- 300 - 500 - 1000 IC, COLLECTOR CURRENT (mA) 6 VC for VCE(sat) - 4.0 - 1.0 - 2.0 - 3.0 - 5.0 - 10 - 20 - 30 - 50 - 100 - 200 - 300 - 500 - 1000 IC, COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients RATINGS AND THERMAL DATA - 3.0 - 2.0 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 19 is based upon TJ(pk) = 200C; TC is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 20. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. - 1.0 - 0.5 - 0.3 - 0.2 - 0.1 - 0.07 - 0.05 - 0.03 - 1.0 TJ = 200C SECONDARY BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.1 ms 1.0 ms dc - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 19. Safe Operating Area Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST SHIP 21/03/00 + 1.0 LAST ORDER 23/09/99 - 1.0 COEFFICIENT (mV/ C) VOLTAGE (VOLTS) 2N4032 2N4033 2N4032 2N4033 PACKAGE DIMENSIONS C -T- E K P D 3 PL 0.36 (0.014) M T A M H M 2 -H- 1 LIFETIME BUY SEATING PLANE L F M J 3 G STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 079-04 (TO-205AD) ISSUE N Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D E F G H J K L M P R INCHES MIN MAX 0.335 0.370 0.305 0.335 0.240 0.260 0.016 0.021 0.009 0.041 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.045 0.500 0.750 0.250 --- 45 _BSC --- 0.050 0.100 --- LAST SHIP 21/03/00 B MILLIMETERS MIN MAX 8.51 9.39 7.75 8.50 6.10 6.60 0.41 0.53 0.23 1.04 0.41 0.48 5.08 BSC 0.72 0.86 0.74 1.14 12.70 19.05 6.35 --- 45 _BSC --- 1.27 2.54 --- LAST ORDER 23/09/99 -A- R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION B SHALL NOT VARY MORE THAN 0.25 (0.010) IN ZONE R. THIS ZONE CONTROLLED FOR AUTOMATIC HANDLING. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. 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