2N4032 - Motorola / Freescale Semiconductor

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol 2N4032 2N4033 Unit

Collector–Emitter Voltage VCEO –60 –80 Vdc

Collector–Base Voltage VCBO –60 –80 Vdc

Emitter–Base Voltage VEBO –5.0 –5.0 Vdc

Collector Current — Continuous IC–1.0 Adc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD0.8

4.56 Watts

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD4.0

22.8 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient R

JA 140 °C/W

Thermal Resistance, Junction to Case R

JC 25 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(IC = –10 mAdc) 2N4032

2N4033

V(BR)CEO –60

–80 —

—

Vdc

Collector–Base Breakdown Voltage

(IC = –10

Adc) 2N4032

2N4033

V(BR)CBO –60

–80 —

—

Vdc

Emitter–Base Breakdown Voltage

(IE = –10

Adc) V(BR)EBO –5.0 — Vdc

Collector Cutoff Current

(VCB = –50 Vdc) 2N4032

(VCB = –60 Vdc) 2N4033

(VCB = –50 Vdc, TA = 150°C) 2N4032

(VCB = –60 Vdc, TA = 150°C) 2N4033

ICBO —

—

–50

nAdc

µAdc

Emitter Cutoff Current

(VEB = –5.0 Vdc) IEBO —–10 µAdc

1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N4032

2N4033

CASE 79–04, STYLE 1

TO–39 (TO–205AD)

 Motorola, Inc. 1997

COLLECTOR

BASE

EMITTER

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2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –100 mAdc, VCE = –5.0 Vdc, @ –55°C)(1) 2N4032,33

(IC = –100 µAdc, VCE = –5.0 Vdc) 2N4032,33

(IC = –100 mAdc, VCE = –5.0 Vdc)(1) 2N4032,33

(IC = –500 mAdc, VCE = –5.0 Vdc)(1) 2N4032,33

(IC = –1.0 Adc, VCE = –5.0 Vdc)(1) 2N4032

2N4033

hFE 40

100

—

300

—

Collector–Emitter Saturation V oltage (1)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

(IC = –1.0 Adc, IB = –100 mAdc) 2N4032

VCE(sat) —

—

–0.15

–0.5

–1.0

Vdc

Base–Emitter Saturation V oltage (1)

(IC = –150 mAdc, IB = –15 mAdc) VBE(sat) — –0.9 Vdc

Base–Emitter On Voltage

(IC = –1.0 Adc, VCE = –1.0 Vdc) 2N4032

(IC = –500 mAdc, VCE = –0.5 Vdc)(1)

VBE(on) —

—–1.2

–1.1

Vdc

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(VCE = –10 Vdc, f = 1.0 MHz) Cobo — 20 pF

Input Capacitance

(VEB = –0.5 Vdc, f = 1.0 MHz) Cibo —110 pF

Small Signal Current Gain

(IC = –50 mAdc, VCE = –10 Vdc, f = 100 MHz) hfe 1.5 5.0 —

SWITCHING CHARACTERISTICS

Storage Time

(IC = –500 mAdc, IB1 = IB2 = –50 mAdc) ts— 350 ns

T urn–On Time

(IC = –500 mAdc, IB1 = –50 mAdc) ton — 100 ns

Fall T ime

(IC = –500 mAdc, IB1 = IB2 = –50 mAdc) tf— 50 ns

1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 1. Turn–On Figure 2. Turn–Off

SWITCHING TIME EQUIVALENT TEST CIRCUITS

200 Ω

–30 V

59 Ω

1N916

PULSE WIDTH = 200 ns

RISE TIME ≤ 2.0 ns

DUTY CYCLE ≤ 2.0%

SCOPE

200 Ω

+3.0 V

–30 V

59 ΩRC

SCOPE

2 < t1 < 500 µs

2 < t2 < 5.0 ns

2 < t3 > 1.0 µs

DUTY CYCLE = 2.0%

+2.0 V

–10.85 V

+8.8 V

11.2 V

Figure 3. Capacitances

REVERSE VOLTAGE (VOLTS)

100

–0.1

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

VCC = –30 V

IC/IB = 10

Q, CHARGE (nC)

ACITANCE

(pF

)

Ceb

Figure 5. Delay Time

IC, COLLECTOR CURRENT (mA)

–10

Figure 6. Rise Time

IC, COLLECTOR CURRENT (mA)

TRANSIENT CHARACTERISTICS

25°C 100°C

Ccb

TIME

(ns

)

t, TIME (ns)

IC/IB = 10

VBE(off) = 2.0 V

VBE(off) = 0 V

VCC = –30 V

IC/IB = 10

1.0

2.0

3.0

5.0

–0.2–0.3 –0.5 –1.0 –2.0–3.0 –5.0 –10 –20–30 –50 –100

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

–10 –20 –30 –50 –100 –200 –300 –500 –1000

100

5.0

7.0

–20 –30 –50 –70 –100 –200 –300 –500 –700 –1000 –10 –20 –30 –50 –70 –100 –200 –300 –500 –700 –1000

100

5.0

7.0

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4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 7. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC, COLLECTOR CURRENT (mA)

2001000

–10

t , FALL TIME (ns)

t , STORAGE TIME (ns)

IB1 = IB2

IC/IB = 10

VCC = –30 V

ts′ = ts – 1/3 tf

VCC = –30 V

IC/IB = 10

IB1 = IB2

SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Figure 9. Frequency Effects

f, FREQUENCY (kHz)

0.01

Figure 10. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

–10

IC = –1.0 mA, RS = 100

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C

Figure 11. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 12. Input Impedance

IC, COLLECTOR CURRENT (mA)

h , CURRENT GAIN

100

200

300

500

700

–20 –30 –50 –70 –100 –200 –300 –500 –700 –1000 10

100

–10 –20 –30 –50 –70 –100 –200 –300 –500 –700–1000

–100 µA, RS = 680

–10 µA, RS = 7.0 kΩ

RS = OPTIMUM SOURCE RESISTANCE

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

00.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

–100

IC = –1.0 mA f = 1.0 kHz

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

050 100 200 300 500 1.0k 2.0k 3.0k 5.0k 10k 20k 30k 50k

–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10

This group of graphs illustrates the relationship of the “h” parameters for this series of transistors. To obtain these

curves, 4 units were selected and identified by number - the same units were used to develop curves on each graph.

UNIT 4 3

0.3

0.5

0.7

1.0

5.0

7.0

2.0

3.0

–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10

UNIT 1

hie, INPUT IMPEDANCE (k OHMS)

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 13. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

Figure 14. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , OUTPUT ADMITTANCE ( mhos)

–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10

UNIT 1

–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10

UNIT 1

h , VOLTAGE FEEDBACK RATIO (X 10 )

re –4

0.1

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN (NORMALIZED)

TJ = 175°C

25°C–55°C

VCE = –1.0 V

VCE = –10 V

STATIC CHARACTERISTICS

IB, BASE CURRENT (mA)

Figure 15. DC Current Gain

VCE, COLLECTOR–EMITTER VOLT AGE (VOLTS)

Figure 16. Collector Saturation Region

2.0

7.0

5.0

1.0

3.0

70 100

2.0

7.0

5.0

1.0

3.0

7.0

5.0

3.0

2.0

1.0

0.2

0.3

0.5

0.7

–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 –700 –1000

–0.2

–0.4

–0.6

–0.8

–1.0

–0.005 –0.007 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50

IC = –1.0 mA –500 mA–100 mA–10 mA

TJ = 25°C

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Figure 17. “On” Voltages

IC, COLLECTOR CURRENT (mA)

Figure 18. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

–0.6

–1.0

VBE(sat) @ IC/IB = 10

RATINGS AND THERMAL DATA

The safe operating area curves indicate IC–VCE limits of the

transistor that must be observed for reliable operation. Collector

load lines for specific circuits must fall below the limits indicated by

the applicable curve.

The data of Figure 19 is based upon TJ(pk) = 200°C; TC is variable

depending upon conditions. Pulse curves are valid for duty cycles

to 10% provided TJ(pk) ≤ 200°C. TJ(pk) may be calculated from the

data in Figure 20. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

OLTA

OLTS)

COEFFICIENT (mV/ C)°

–0.4

–0.8

–1

–0.2

0–2.0–3.0 –5.0 –10 –20–30 –50 –100 –200–300 –500 –1000

VBE(on) @ VCE = –1.0 V

VCE(sat) @ IC/IB = 10

–1.0

–2.0

–3.0

–4.0

–1.0 –2.0–3.0–5.0 –10 –20–30–50 –100 –200 –300 –500 –1000

θVC for VCE(sat)

θVB for VBE

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0

–3.0

–2.0 –3.0 –5.0 –10 –20 –30 –50 –100

IC, COLLECTOR CURRENT (AMP)

–0.03

–0.05

–0.07

–0.1

–0.2

–0.3

–0.5

–1.0

–2.0

–7.0 –70

TJ = 200°C0.1 ms

1.0 ms

SECONDAR Y BREAKDOWN

LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25°C (SINGLE PULSE)

CURVES APPLY BELOW

RATED VCEO

Figure 19. Safe Operating Area

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 079–04

(TO–205AD)

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION J MEASURED FROM DIMENSION A

MAXIMUM.

4. DIMENSION B SHALL NOT VARY MORE THAN

0.25 (0.010) IN ZONE R. THIS ZONE

CONTROLLED FOR AUTOMATIC HANDLING.

5. DIMENSION F APPLIES BETWEEN DIMENSION

P AND L. DIMENSION D APPLIES BETWEEN

DIMENSION L AND K MINIMUM. LEAD

DIAMETER IS UNCONTROLLED IN DIMENSION

P AND BEYOND DIMENSION K MINIMUM.

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

SEATING

PLANE

D3 PL

–T–

–A–

–H–

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.335 0.370 8.51 9.39

B0.305 0.335 7.75 8.50

C0.240 0.260 6.10 6.60

D0.016 0.021 0.41 0.53

E0.009 0.041 0.23 1.04

F0.016 0.019 0.41 0.48

G0.200 BSC 5.08 BSC

H0.028 0.034 0.72 0.86

J0.029 0.045 0.74 1.14

K0.500 0.750 12.70 19.05

L0.250 ––– 6.35 –––

M45 BSC 45 BSC

P––– 0.050 ––– 1.27

R0.100 ––– 2.54 –––

0.36 (0.014) H M

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