sEMIKRON VrsM lFRMs (maximum values for continuous operation) VRRM 3A | 6,7A IFav (sin. 180, Tret = 105 C, L = 10 mm) Vv 19A | 4,3A 100 SK1G01 SK3G01 200 SK 1G 02 SK 3G 02 400 SK 1G 04 SK 3G 04 600 SK 1 G 06 SK 3 G06 800 SK 1G 08 SK 3 G08 1000 SK 1G 10 SK3G10 1200 SK 1G 12* SK3G12 Symbol] Conditions SK1G SK3G IFAV Tref = 130C; L = 10 mm; sin. 180 13A 3A Tamb = 45 C; sin. 180; p.c.b. 50 x 50 mm 15A 21A IFSM Ty = 25C; 10 ms 58 A 200A Ty = 175 C; 10 ms 50A 150A it Ty= 25C;8,3...10ms 16,8 As 200 As Ty = 175 C; 8,3...10ms 12,5 As 110 As Qe | Ty= 150C; pte IF = 10 A; Va = 100 V; typ. 15 uc 25 uC In Ty= 25C; Ve = VaRM 4uA 4uA Ty = 150 C; VR = VAM 0,2mA 0,25 mA VF Ty= 25 C; (Ir = ...); max 1,1 (1 A) 1,1 V(3A) Vito) Ty = 175C 0,85 V 0,85 V IT Ty = 175 C 75 mQ 30 mQ Cj !' VR = 0; f = 1 MHz; typ. 45 pF 100 pF Vr =4V;f=1 MHz; typ. 20 pF Rthir L=10mm 30 C/W 14 C/W Rthja p.c.b. 50 x 50 mm 75 C/W 60 C/W TW -40...4+175 C)-40...+ 175C : Tstg -55...+175C:\-55...4+175C Tsolder | max. 105,L=9mm 280 C 280 C a 5 9,81 m/s 5- 9,81 m/s* w approx. 0,59 1g Case E33 E29 * Available in limited quantities Rectifier Diodes SK1G SK3G Features Axial lead diodes, taped Glass passivated silicon chip i Void-free moulded plastic acc. to Underwriters Laboratory (UL) flammability classification 94 V-0 Polarity: Band denotes cathode terminal Peak inverse voltage up to 1200 V High surge current of 200 A Available with formed leads on request Typical Applications General purpose rectifier diodes for high quality requirement For printed circuit board mounting by SEMIKRONA 0.5 leav %5 Temp 50 100 150 cS =200 0 Ve 0.5 1 Vv 15 Fig. 4 Rated forward current vs. ambient temperature Fig. 6a Forward characteristics 12 Al. SK 3G 10 = SK 1G 8 15 6 Tyj = 1754175 25 C 25 1 4 0.5 2 'p Pray O ve 05 1 45 v2 9 lray 05 1 15 A 2 Fig. 6b Forward characteristics Fig. 8 Power dissipation vs. forward current letov) FAV 1 SK 1G SK 3G 0.7 1 ED 2 3 4 5 10 20 30 40 50 % 100 Fig. 9 Rated overload current vs. duty cycle B814 by SEMIKRON +>sEMIKRON O71 t 0.01 3.45 101 2 3 465 A 102 IFlov) Fig. 10 Rated overload current vs. time > SK3G 1 Thay 0 Tref 50 100 150 200 Fig. 14 b Rated forward current vs. reference temp. 1000 pA SsKSBG 100 VR=VRRM 1 oN; 50 100 150 C 200 Fig. 15 b Reverse current vs. virt. junction temp. A lrav 5 Tret 50 100 150 cc 200 Fig. 14 a Rated forward current vs. reference temp. 1000 SK 1G pA 100 "5 Ty} 50 100 150 c 200 Fig. 15 a Reverse current vs. virtual junction temp. 60 SK 1G W 50 40 30 Rtnir 10 5 b 10 45 20 mm 25 Fig. 16 a Thermal resistance vs. lead length by SEMIKRON B8-1530 ec P.C.B. for Rinja = 60/75 C/W Ww 25 50 - 25 20 ] | | | 15 : 7 -L. __ + 3 Cu 10 35pm | Za | 5 RN 2 "f Rthir Glass fiber ee reinforced = SL 10 15 20 25 mm 30 epoxy resin 0 Fig. 16 b Thermal resistance vs. lead length _ SK1G SK3G Case E 33 Case E 29 9 60.8 1 | G12 3 yn 208 _ | aj 1,28 y \ i i oO N w * 63 0,8max. a 5311 ( _.| 510,25 3500 diodes per reel }~ 20x5 =100#1 Reel dimensions page B 8 2 B8-16 2 _ 08 max. IO & Lp yg 4 _- 10205 b- 10x10 2100 #1 2000 diodes per reet Dimensions in mm by SEMIKRON ~~