IXFN24N100F HiPerRFTM Power MOSFETs VDSS ID25 = = 1000V 24A 390m 250ns RDS(on) trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 24 A IDM TC = 25C, Pulse Width Limited by TJM 96 A IA EAS TC = 25C TC = 25C 24 3 A J dV/dt IS IDM, di/dt < 100A/s, VDD VDSS TJ 150C, RG = 2 10 V/ns PD TC = 25C 600 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features z z z z z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 12A, Note 1 TJ = 125C (c) 2002 IXYS CORPORATION, All Rights Reserved z V RF capable MOSFETs Double metal process for low gate resistance Avalanche rated Low package inductance Fast intrinsic rectifier Applications z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D = Drain DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages 5.5 V 200 nA z 100 A 3 mA z z Easy to mount Space savings High power density 390 m DS98875A(12/02) IXFN24N100F Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 16 VDS = 10V, ID = 12A, Note 1 Ciss Coss 24 S 6600 pF 760 pF 230 pF 22 ns 18 ns 52 ns 11 ns 195 nC 40 nC 100 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 12A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 12A Qgd SOT-227B (IXFN) Outline (M4 screws (4x) supplied) 0.21 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 24 A ISM Repetitive, Pulse Width Limited by TJM 96 A VSD IF = 24A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 24A, VGS = 0V -di/dt = 100A/s VR = 100V 1.4 250 ns C 10 A Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2