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Specifications subject to change without notice. 3/99A
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics5Rise, Fall (10/90% or 90/10% RF) 30 ns
On, Off (50% CTL to 90/10% RF) 35 ns
Video Feedthru 20 mV
Input Power for 1 dB Compression 0.9 GHz +33 dBm
Intermodulation Intercept Point (IP3) For Two-tone Input Power +10 dBm 0.9 GHz +55 dBm
Control Voltages VLow = 0 to -0.2 V @ 20 µA Max.
VHigh = -5 V @ 50 µA to -8 V @ 200 µA Max.
GaAs IC High Power SPDT Switch
DC–2 GHz
Features
■High Linearity (55 dBm IP3 @ 0.9 GHz)
■Low Insertion Loss (0.4 dB @ 0.9 GHz)
■Low DC Power Consumption
SOIC-8
AS279-12
Description
The AS279-12 is a low cost IC FET SPDT switch in an
SOIC-8 plastic package. This switch has been designed
for use where extremely high linearity and low insertion
loss are required. Some standard implementations
include antenna changeover, T/R and diversity switching
over 2 W. The AS279-12 switch can be used in many
analog and digital wireless communication systems
including cellular, GSM and DECT applications.
Parameter1Frequency2Min. Typ. Max. Unit
Insertion Loss3DC–0.1 GHz 0.3 0.4 dB
DC–0.5 GHz 0.35 0.5 dB
DC–1.0 GHz 0.4 0.6 dB
DC–2.0 GHz 0.6 0.8 dB
Isolation DC–0.1 GHz 50 55 dB
DC–0.5 GHz 33 40 dB
DC–1.0 GHz 25 30 dB
DC–2.0 GHz 15 20 dB
VSWR4DC–2.0 GHz 1.3:1 1.4:1
Electrical Specifications at 25°C (0, -5 V)
Operating Characteristics at 25°C (0, -5 V)
1. All measurements made in a 50 Ωsystem, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/°C.
4. Insertion loss state.
5. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.