MJ21195 - ON Semiconductor - Datasheet.Directory

Silicon Power Transistors

The MJ21195 and MJ21196 utilize Perforated Emitter technology

and are specifically designed for high power audio output, disk head

positioners and linear applications.

•Total Harmonic Distortion Characterized

•High DC Current Gain –

hFE = 25 Min @ IC = 8 Adc

•Excellent Gain Linearity

•High SOA: 3 A, 80 V, 1 Second

MAXIMUM RATINGS

Rating Sym-

bol Value Unit

Collector–Emitter Voltage VCEO 250 Vdc

Collector–Base Voltage VCBO 400 Vdc

Emitter–Base Voltage VEBO 5 Vdc

Collector–Emitter Voltage – 1.5 V VCEX 400 Vdc

Collector Current — Continuous

Collector Current — Peak (1) IC16

30 Adc

Base Current — Continuous IB5 Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25°CPD250

1.43 Watts

W/°C

Operating and Storage Junction Temperature Range TJ, Tstg –65 to

+200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RθJC 0.7 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)

Characteristic Symbol Min Typical Max Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0) VCEO(sus) 250 — — Vdc

Collector Cutoff Current

(VCE = 200 Vdc, IB = 0) ICEO — — 100 µAdc

(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤10%. (continued)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 2 1Publication Order Number:

MJ21195/D

16 AMPERE

COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS

250 WATTS

MJ21195

MJ21196

*ON Semiconductor Preferred Device

PNP

NPN

CASE 1–07

TO–204AA

(TO–3)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typical Max Unit

OFF CHARACTERISTICS

Emitter Cutoff Current

(VCE = 5 Vdc, IC = 0) IEBO — — 100 µAdc

Collector Cutoff Current

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX — — 100 µAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward

Biased

(VCE = 50 Vdc, t = 1 s (non–repetitive)

(VCE = 80 Vdc, t = 1 s (non–repetitive)

IS/b 5

2.5 —

——

—

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 16 Adc, VCE = 5 Vdc)

hFE 25

8—

—

Base–Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc) VBE(on) — — 2.2 Vdc

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat) —

——

—1.4

Vdc

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE

unmatch

(Matched pair hFE = 50 @ 5 A/5 V) hFE

matched

THD

—

0.8

0.08

—

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) fT4 — — MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob — — 500 pF

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2%

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product Figure 2. Typical Current Gain

Bandwidth Product

f, CURRENT BANDWIDTH PRODUCT (MHz)

PNP MJ21195

f, CURRENT BANDWIDTH PRODUCT (MHz)

NPN MJ21196

IC, COLLECTOR CURRENT (AMPS)

0.1 1.0 10

6.5

6.0

5.0

4.0

3.0

2.0

1.0

7.5

7.0

6.0

4.0

3.0

5.0

1.0

2.0

0.1 1.0 10

VCE = 10 V

5 V

TJ = 25°C

ftest = 1 MHz

VCE = 5 V

10 V

TJ = 25°C

ftest = 1 MHz

6.5

4.5

3.5

5.5

1.5

2.5

5.5

4.5

3.5

2.5

1.5

0.5

MJ21195 MJ21196

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IB = 2 A

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

hFE , DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

hFE , DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Typical Output Characteristics

IC, COLLECTOR CURRENT (A)

PNP MJ21195 NPN MJ21196

hFE , DC CURRENT GAIN

TYPICAL CHARACTERISTICS

PNP MJ21195

NPN MJ21196

1000

100

100101.00.1

TJ = 100°C 25°C

-25°C

VCE = 20 V

1000

100

100101.00.1

TJ = 100°C 25°C

-25°C

VCE = 20 V

1000

100

100101.00.1

1000

100

100101.00.1

5.0

5.0010152025

5.0

1.5 A

1 A

0.5 A

IB = 2 A

TJ = 25°C

TJ = 100°C 25°C

-25°C

VCE = 5 V

TJ = 100°C

25°C

-25°C

VCE = 5 V

1.5 A

1 A

0.5 A

TJ = 25°C

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Figure 9. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

SATURATION VOLTAGE (VOLTS)

Figure 10. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

SATURATION VOLTAGE (VOLTS)

Figure 11. Typical Base–Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

VBE(on), BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Typical Base–Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

VBE(on), BASE-EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C; TC is vari-

able depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled

to values less than the limitations imposed by second break-

down.

PNP MJ21195 NPN MJ21196

TYPICAL CHARACTERISTICS

PNP MJ21195 NPN MJ21196

3.0

2.5

2.0

1.5

1.0

0.5

100101.00.1

1.6

1.2

1.0

0.8

0.6

0.4

100101.00.1

0.2

1.0

0.1

100101.00.1

1.0

0.1

100101.00.1

100

1.0

0.1

100101.0 1000

TJ = 25°C

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

TJ = 25°C

IC/IB = 10

VBE(sat)

VCE(sat)

1.4 TJ = 25°C

IC/IB = 10

VBE(sat)

VCE(sat)

TJ = 25°C

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

TJ = 25°C

10 ms

50 ms

250 ms

1 sec

MJ21195 MJ21196

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Figure 14. MJ21195 Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

Figure 15. MJ21196 Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

AUDIO PRECISION

MODEL ONE PLUS

TOTAL HARMONIC

DISTORTION

ANALYZER

SOURCE

AMPLIFIER

50 Ω

0.5 Ω

0.5 Ω8.0 Ω

-50 V

DUT

+50 V

Figure 16. Typical Total Harmonic Distortion

Figure 17. Total Harmonic Distortion Test Circuit

FREQUENCY (Hz)

THD, TOTAL HARMONIC

DISTORTION (%)

10000

1000

100

100101.00.1

10000

1000

100

100101.00.1

1.2

1.1

1.0

0.9

0.8

0.7

0.6

10000010000100010010

TJ = 25°C

ftest = 1 MHz

Cib

Cob

TJ = 25°C

ftest = 1 MHz

Cib

Cob

MJ21195 MJ21196

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PACKAGE DIMENSIONS

CASE 1–07

ISSUE Z

TO–204 (TO–3)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T– SEATING

PLANE

2 PL

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

MJ21195 MJ21196

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Notes

MJ21195 MJ21196

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MJ21195/D

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