The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. INCH - POUND MIL-S-19500/169H 19 May 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N3070, 1N3O70-1, 1N3O70UR-1, 1N4938, 1N4938-1, IN4938UR-1 JAN, JANTX, JANTXV, JANS, ANO JANC This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, switching diodes. Four levels of product assurance are provided for each device type and one product assurance level for die, as specified in MIL-S-19500. 1.2 Physical dimensions. See figures 1, 2, and 3 (similar to DO-7 and DO-35). 1.3 Maximum ratings (Ta = +25C, unless otherwise specified). | Teo Teoma | | Vien Vw I 0 yV Top Tot Zaux Ron | t,= 18 t, 7 1 ws 2/ V_(pk) |_ (pk? | mA de ma_de A_de 4 c C/W "c/w 200 175 100 500 2.0 -65 to +175 |-65 to +175 50 250 1/ Derate at 0.667 mA/C above T, = +25C. 2/ For UR suffix devices, Rosecman = 50C/W. 1.4 Primary electrical characteristics. Primary electrical characteristics at T, = +25C, unless otherwise specified. Vey Tas t, I, = 100m | V, 2175 V Vv de BA_de ns 1.0 0.1 50 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELD, 1507 Wilmington Pike, Dayton, OH 45444-5765 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. FSC 5961 Approved for public release; distribution is unlimited. M 0000125 0035043 TO1 MEMILSMIL-S-19500/169H ee IN3070, IN3O70-1 _ OB x t__e_, ll ' oo NX OPTIONAL Dimensions Type Symbol Millimeters Inches Notes Min Max Min Max A 4.95 7.62 195 300 1N3070 98 1.98 2.72 .078 .107 1N3070-1 Cc 25.40 | 38.10 | 1.000 | 1.500 eo 0.46 0.56 -018 022 2,3 A 3.56 4.57 -140 . 180 98 1.42 1.88 -056 -074 c 25.40 1.000 1N4938 1N4938- 1 eo 0.48 0.53 .019 .021 2,3 E 54.36 2.140 6 1.91 .075 NOTES: 1. Metric equivalents are given for general information only. 2. Both leads shall be within the specified Limit. 3. The specified lead diameter applied in the zone between .050 inch (1.27 mm) and 1.000 inches (25.40 mm) from the diode body. Outside of this zone the lead diameter is not controlled. FIGURE 1. Physical dimensions of 1N3070, 1N3070-1, 1N4938, and _1N4938-1. M 0000125 0035044 546 MMMILSMIL-S-19500/169H a A i a Fj ae CATHODE < cy _ > fo A MIN GOLD mT OOO a | | Dimension 4000 A MIN GOLD Symbol Inches Millimeters Min Max Min | Max A .019 } .025 } 0.48 | 0.64 B .008 | .012 | 0.20 | 0.30 Cc .007 | .011 | 0.18 | 0.28 NOTES: = Oo0012S 0035045 884 MEMILS 1, Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. DESIGN DATA Metallization: Top: (Cathode) .... Back (Anode). .... Au thickness: Top: 6 ee ee ee Back: ....- +22 Chip thickness .... ~ - 10,000A minimum - . 44,0004 minimum -. 9mils #2 mils JANG (A-version) die dimensions for_1N6938.MIL-S-19500/169H fod enetons G | Symbol Inches Millimeters Min Max Min Max gd .063 -970 1.60 1.78 F -016 -028 0.41 0.71 G - 130 ~146 3.30 3.71 G6, | .100 ref [ 2.54 ref | $s -001 min 0.03 min NOTES: 1. Dimensions are in inches. 2. Metric equivalent are given for general information only. FIGURE 3. Physical dimensions and configuration for 1N3S070UR-1 and 1N4938UR-{ (00-213AA). 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY M@ 0000125 0035046 710 MEMILSMIL-S-19500/169H MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Building 40 (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-S-19500. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-S-19500 and on figures 1, 2, and 3. 3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-S-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.3.2 Dash-one construction. These devices shatl be category I, II, or If] metallurgically bonded in accordance with MIL- $-19500. JANS devices shall utilize only category I metallurgical bonds and voidless, thermally matched, double plug construction. 3.4 Marking. Marking shall be in accordance with MIL-S-19500. 3.4.1 Marking for UR devices. For UR version devices only, alt marking except polarity may be omitted from the body, but shall be retained on the initial container. 3.5 Polarity. Alternatively, the polarity of all types shall be indicated with a contrasting color band to denote the cathode end. For UR suffix devices a minimum of three contrasting color dots spaced around the cathode end of the device may be used in lieu of contrasting color band. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein except lot accumulation requirement shall be six months in lieu of six weeks. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S-19500. 4.2.1 JANC devices. Qualification for JANC devices shall be in accordance with appendix H of MIL-S-19500. 4.3 Screening (JANS, JANTX, AND JANTXV levels only). Screening shall be in accordance with table II of MIL-S-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. M@ 0000125 0035047 57 MEMILSMIL-S-19500/169H Measurement Screen (see table II of MIL-S-19500) JANS level JANTX and JANTXV levels 3A Temperature cycling in Temperature cycling in accordance with MIL-S-19500. accordance with MIL-S-19500. 3c VU Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) 9 Ip, and Ve, Not applicable 11 Iq, and V~,; Al_, 100 Ia, and Ve, percent of initial reading or 50 nA de, whichever is greater. AV,, $ #25 mV dc change from initial reading. 12 See 4.3.1 See 4.3.1, t = 48 hours 13, 2/ Subgroups 2 and 3 of table I Subgroup 2 of table I herein; herein; AI,, 2100 percent Alp, 100 percent of initial of initial reading or reading or 50 nA de, whichever 50 nA de,whichever is greater. is greater. AV,, < +25 mV dc AV,, $ 225 mV dc change from change from initial reading. initial reading. 1/ Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-S-19500, screen 3, prior to this thermal test. 2/ Thermal impedance (Z9,,) is not required in screen 13, if previously preformed during screening. 4.3.1 Screening (JANC). 4.3.2 Power burn-in conditions. Ig = 100 MA dc; Vawy = 175 V (pk); f = 50 - 60 Hz; T, = room ambient as defined in the generat requirements in (see 4.5) of MIL-STD-750. 1, = 160 mA de; T, = room ambient as defined in the general requirements in (see 4.5) of MIL-STD-750. Screening of JANC die shall be in accordance with MIL-S-19500, appendix H. Power burn-in conditions are as follows: or 4.3.3 Thermal impedance (Z,,, measurements) for initial qualification or requalification. The Zg,x measurements shall be performed in accordance with MIL-STD-750, method 3101 (read and record date 25x). Zou shall be Twenty-two of these samples shall be serialized and provided to the qualifying Measurements conditions shall be in accordance with 4.4.1. supplied on one lot (500 pieces minimum). activity for correlation prior to shipment of parts. Limit for 2,,, in both screening and group A, subgroup 2 = 50C/W. 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-$-19500. 4.4.1 Group A_inspection. Electrical measurements (end-points) shal Thermal impedance conditions are as follows: herein. a, Ly ee ee ee ee ew b. ty ee ee ee ee ee d. typ - 6 ee we eee . eet eee ee ee 10 ms. Or MB 0000125 0035048 593 MEMILS Group A inspection shall be conducted in accordance with MIL-S-19500, and l be in accordance with the steps and footnotes of table I, group A, subgroup 2 300 ma to 500 m. 1 ma to 10 ma. 100 ws maximum, table I herein.MIL-S-19500/169H Group B inspection shall be conducted in accordance with the conditions specified for subgroup 4.4.2 Group B inspection. testing in table [Va (JANS) and table IVb (JANTX and JANTXV) of MIL-S-19500. Electrical measurements (end-points) and delta requirements shall be in accordance with the steps and footnotes of table I, group A, subgroup 2 herein. Group 8 inspection, table IVa (JANS) of MIL-S-19500. Condition Ig = 100 ma de; V, = 175 V (pk); f = 60 Hz; t., = tow = 3 minutes 4.4.2.1 4 1037 minimum for 2,000 cycles. 5 1027 T, = 4125C T, = #125C Ig = 100 m de or I, = 160 mA de f = 60 Hz Va = 175 Vpk) ) 3101 Ron = 250C/W maximum. 4.4.2.2 Group B inspection, table IVb (JAN, JANTX and JANTXV) of MIL-S-19500. Subgro Method Condition 2 4066 Not applicable. 3 {027 Ig = 100 mA de; V, = 175 V (pk); f = 60 Hz, T, = room ambient as defined in the general requirements in (see 4.5) of MIL-STD-750. 5 3101 Roy = 250C/W maximum (see 4.5.1). 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps and footnotes of table I, group A, subgroup 2 herein. Me ooocoi2es 0035049 4eT MMILSMIL-S-19500/169H TABLE I. Group A inspection. MIL-STD-750 Limits Inspection I/ Symbol Unit Method Conditions Min Max Subgroup 1 Visual _and mechanical 2071 examination Subgroup 2 Thermal impedance 2/ 3101 See 4.3.3 Zaux 50 C/W Forward voltage 4011 I, = 100 mA de Vey 1.0 V de Reverse current 4016 V, = 175 V de Tat 0.1 BA de Breakdown voltage 4021 T, = 100 pA de Vier 200 V de Subgroup 3 High temperature operation T, = +150C Reverse current 4016 Va = 175 V de Ip 100 pA de Low temperature operation Tz = -55C Forward voltage 4011 I, = 100 mA de Vea 1.2 V de Subgroup 4 Reverse recovery time 4031 Test condition 8; I, = 30 mA de; it, 50 ns I, = 30 M dc; Ipc = 3.0 MA Capacitance 4001 V, = OV de; f = 1.0 miz; Cc 5.0 pF Veg = 50 m (p-p) maximum Subgroup 5 Not applicable Subgroup 6 Surge current 4066 1, = 0 mA de; 10 surges at 1 per minute; t, = 1 s; ley * 2.0 A (pk) Electrical measurements Group A, subgroup 2 Subgroup 7 Not applicable 1/ For sampling plan, see MIL-S-19500. 2/ Not applicable to JANC. MB 0000125 0035050 141 MMNILSMIL-S-19500/169H 4.4.3.1 Group C inspection, table V of MIL-$-19500. Subgro Method Condition 2 2036 Lead tension: Test condition A; weight = 4 lb; t = 15 s #3 s. Lead fatigue: Test condition E. Not applicable for UR suffix devices. 6 1026 Ig = 100 mA de; V, = 175 V (pk); f = 60 Hz, T, = room ambient as defined in the generat requirements in (see 4.5) of MIL-STD-750. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Thermal resistance. Thermal resistance measurement shall be performed in accordance with MIL-STD-750, method 3101 or 6081. Forced moving air or draft shall not be permitted across the device during test. The maximum Limit for Ro, under these condition shall be Rosimaxy = 290C/W-. al ly ee ee ee ee es 75 m to 300 m. b. tye ec te ee eee ee Thermal equilibrium. Cc. ly ee ee ee ee es ae eee wt wwe 1m to 10 mM. d. typ se ee ee ee es 100 ws (maximum). LS = Lead spacing = .375 inch (9.52 mm) as defined on figure 4 below: LS = 0 for UR suffix devices and Rojecimex) = 30C/W. COPPER LEAD CLAMP COPPER LEAO CLAMP INFINITE HEAT-DISSIPATOR FIGURE 4. Mounting arrangement. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. Mi 0000125 0035051 048 MENILSMIL-S-19500/169H 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation. b. Lead finish as specified (see 3.3.1). c. Product assurance level and type designator. 6.3 Suppliers of JANC die. The qualified JANC suppliers with the applicable letter version (example, JANCA4938) will be identified on the QPL. The Part or Identifying Number (PIN) is listed below: JANC ordering information Manufacturer PIN 14552 1N4938 A4938 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. CONCLUDING MATERIAL Custodians: Preparing activity: Army - ER DLA - ES Navy - EC Air Force - 17 (Project 5961-1626) NASA - NA Review activities: Army - MI, SM Navy - AS, CG, MC Air Force - 14, 19, 85, 99 10 MM 0000125 0035052 T14 MMNMILS