NOVEMBER 1995 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089 Gated Protector Series
Recommended Operating Conditions
Component Min Typ Max Unit
CGGate decoupling capacitor 100 220 nF
RS
Series resistor for GR-1089-CORE first-level surge survival 25 Ω
Series resistor for GR-1089-CORE first-level and second-level surge survival 40 Ω
Series resistor for GR-1089-CORE intra-building port surge survival 8 Ω
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector 10 Ω
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
IDOff-state current VD=V
DRM, VGK =0 TJ= 25 °C-5µA
TJ= 85 °C-50µA
V(BO) Breakover voltage
2/10 µs, IPP = -56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF
2/10 µs, IPP = -100 A, RS = 50 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = -53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = -96 A, RS = 52 Ω, VGG = -48 V, CG = 220 nF
-57
-60
-60
-64
V
VGK(BO) Gate-cathode impulse
breakover voltage
2/10 µs, IPP = -56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF
2/10 µs, IPP = -100 A, RS = 50 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = -53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = -96 A, RS = 52 Ω, VGG = -48 V, CG = 220 nF
9
12
12
16
V
VFForward voltage IF=5A, t
w=200µs3V
VFRM Peak forward recovery
voltage
2/10 µs, IPP = 56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF
2/10 µs, IPP = 100 A, RS = 50 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = 53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = 96 A, RS = 52 Ω, VGG = -48 V, CG = 220 nF
6
8
8
12
V
IHHolding current IT= -1 A, di/dt = 1A/ms, VGG =-48V -150 mA
IGKS Gate reverse current VGG =V
GK =V
GKRM, VKA =0 TJ= 25 °C-5µA
TJ= 85 °C-50µA
IGT Gate trigger current IT=-3A, t
p(g) ≥20 µs, VGG =-48V 5 mA
VGT Gate-cathode trigger
voltage IT=-3A, t
p(g) ≥20 µs, VGG = -48 V 2.5 V
QGS Gate switching charge 1.2/50 µs, IPP = -53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF 0.1 µC
CKA Cathode-anode off-
state capacitance f=1MHz, V
d=1V, I
G= 0, (see Note 3) VD= -3 V 100 pF
VD=-48V 50 pF
NOTES: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance
TA = 25 °C, EIA/JESD51-3
PCB, EIA/JESD51-2
environment, PTOT = 1.7 W D Package 120 °C/W