IRF532FI - STMicroelectronics - Datasheet.Directory

1/8August 2002

NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @ .

IRF530

N-CHA NNE L 100 V - 0.115 Ω - 14A TO-220

LOW GATE CHARGE STripFET™ II POWER MOSF ET

■TYPICAL RDS(on) = 0.115Ω

■AVALANCHE RUGGED TECHNOLOGY

■100% AVALANCHE TESTED

■LOW GATE CHARGE

■HIGH CURRENT CAPABILITY

■175 oC OPERATING TEMPERATURE

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET™ process has specifically been

designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced

high-efficiency, high-frequency isolated DC-DC

converters for Telecom and Computer applications. It is

also intended for any applications with low gate drive

requirements.

APPLICATIONS

■HIGH CURRENT, HIGH SWITCHING SPEED

■SOLENOID AND RELAY DRI VERS

■REGULATOR

■DC-DC & DC-AC CONVERTERS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■AUTOM OT IVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, etc.)

TYPE VDSS RDS(on) ID

IRF530 100 V <0.16 Ω14 A

123

TO-220

ABSOLUTE MAXIMUM RATINGS

(•) P ul se width li mited by safe operating area. (1) ISD ≤14A, di/dt ≤30 0A/ µ s , V DD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 14A, VDD = 50V

Symbol Parameter Value Unit

VDS Drain-so urce Voltag e (VGS = 0) 100 V

VDGR Drain-gate Voltage (RGS = 20 kΩ)100 V

VGS Gate- source Voltage ± 20 V

IDDrain Current (continuous) at TC = 25°C 14 A

IDDrain Current (continuous) at TC = 100°C 10 A

IDM(•) Drain Current (pulsed) 56 A

Ptot Total Dissipation at TC = 25°C 60 W

Derating Factor 0.4 W/°C

dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns

EAS (2) Single Pulse Avalanche Energy 70 mJ

Tstg Storage Temperature -55 to 175 °C

TjOperating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

IRF530

2/8

THE RMAL DA TA

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise spe cified)

OFF

ON (*)

DYNAMIC

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max

Max 2.5

62.5

300

°C/W

°C

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source

Breakdown Voltage ID = 250 µA, VGS = 0 100 V

IDSS Zero Gate Voltage

Drain Current (VGS = 0) VDS = Max Rating

VDS = Max Rating TC = 100°C 1

10 µA

µA

IGSS Gate-body Leakage

Current (VDS = 0) VGS = ± 20 V ±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VGS(th) Gate Threshold Voltage VDS = VGS I

= 250 µA 234V

DS(on) Static Drain-source On

Resistance VGS = 10 V ID = 7 A 0.115 0.16 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (*) Forward Transconductance VDS = 15 V ID=7 A 7S

iss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0 458

3/8

IRF530

SWITCHIN G ON

SWITCHIN G OFF

SOURCE DRAIN DIODE

(*)P ulsed: P ul se durat i on = 3 00 µs, duty cycle 1.5 %.

(•)Puls e width l imi t ed by saf e operating area.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on)

trTurn-on Delay Time

Rise Time VDD = 50 V ID = 7 A

RG= 4.7 Ω V

GS = 10 V

(Resistive Load, Figure 3)

25 ns

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 80V ID = 14A VGS= 10V 16

3.7

4.7

21 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off)

tfTurn-off Delay Time

Fall Time VDD = 50 V ID = 7 A

RG= 4.7Ω, V

GS = 10 V

(Resistive Load, Figure 3)

8ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ISD

ISDM (•)Source-drain Current

Source-drain Current (pulsed) 14

56 A

VSD (*) Forward On Voltage ISD = 14 A VGS = 0 1.6 V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 14 A di/dt = 100A/µs

VDD = 10V Tj = 150°C

(see test circuit, Figure 5)

230

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area Thermal Impedance

IRF530

4/8

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

5/8

IRF530

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature

. .

IRF530

6/8

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Induc tive Wav eform

Fig. 3: Switching Times Test Circuits For Resistive

Load Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switchin g

And Diode Recovery Ti m es

7/8

IRF530

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051

D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067

F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409

L2 16.4 0.645

L4 13.0 14.0 0.511 0.551

L5 2.65 2.95 0.104 0.116

L6 15.25 15.75 0.600 0.620

L7 6.2 6.6 0.244 0.260

L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

Dia.

TO-220 MECHANICAL DATA

P011C

IRF530

8/8

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