IRF530 N-CHANNEL 100V - 0.115 - 14A TO-220 LOW GATE CHARGE STripFETTM II POWER MOSFET TYPE IRF530 VDSS RDS(on) ID 100 V <0.16 14 A TYPICAL RDS(on) = 0.115 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE 3 1 DESCRIPTION 2 TO-220 This MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS REGULATOR DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Value Unit 100 V Drain-gate Voltage (RGS = 20 k) 100 V Gate- source Voltage 20 V ID Drain Current (continuous) at TC = 25C 14 A ID Drain Current (continuous) at TC = 100C 10 A IDM(*) Ptot Drain Current (pulsed) 56 A Total Dissipation at TC = 25C 60 W Derating Factor 0.4 W/C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns EAS (2) Single Pulse Avalanche Energy 70 mJ -55 to 175 C Tstg Tj Storage Temperature Operating Junction Temperature (*) Pulse width limited by safe operating area. (1) ISD 14A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID = 14A, VDD = 50V August 2002 NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @. 1/8 IRF530 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.5 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 A, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 100C IGSS Gate-body Leakage Current (VDS = 0) VGS = 20 V V(BR)DSS Min. Typ. Max. 100 Unit V 1 10 A A 100 nA ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 A Min. Typ. Max. Unit 2 3 4 V 0.115 0.16 Typ. Max. Unit ID = 7 A DYNAMIC Symbol gfs (*) Ciss Coss Crss 2/8 Parameter Test Conditions Forward Transconductance VDS = 15 V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 7 A Min. 7 S 458 68 29 pF pF pF IRF530 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 7 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) 16 25 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 80V ID = 14A VGS= 10V 16 3.7 4.7 21 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 7 A VDD = 50 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) 32 8 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (*) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 14 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/s ISD = 14 A VDD = 10V Tj = 150C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 92 230 5 Max. Unit 14 56 A A 1.6 V ns nC A (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 IRF530 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 IRF530 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/8 IRF530 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 IRF530 TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. 1.27 MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 IRF530 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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