CREAT BY ART
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
12L 13L 14L 15L 16L 19L 10L A5L
V
RRM
20 30 40 50 60 90 100 150 V
V
RMS
14 21 28 35 42 63 70 105 V
V
DC
20 30 40 50 60 90 100 150 V
I
F(AV)
A
8.0
dV/dt V/μs
T
JO
C
T
STG O
C
Document Number: DS_D1308028 Version: N13
SS12L thru SS115L
Taiwan Semiconductor
Surface Mount Schottk
y
Barrier Rectifier
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: Sub SMA Sub SMA
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
Marking code
SS
15L
SS
16L
SS
19L
0.4 0.05
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
30
Typical thermal resistance R
θJL
R
θJA
45
100
O
C/W
Maximum instantaneous forward voltage (Note 1)
@ 0.5A
@ 1.0A
V
F
V
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=100 ℃
T
J
=125 ℃
I
R
mA
Operating junction temperature range
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
PARAMETER SYMBOL SS
12L
SS
13L
SS
14L
Voltage rate of change (Rated V
R
)
SS
110L
SS
115L UNIT
0.385
0.45
0.43
0.50
0.51
0.55
0.58
0.70
0.70
0.80
0.75
0.90
A
6.0 -
-0.5
- 55 to +125 - 55 to +150
10000
PART NO.
PART NO.
SS16L
SS16L
SS16L
(TA=25℃ unless otherwise noted)
Document Number: DS_D1308028 Version: N13
PACKAGE
RT Sub SMA
7,500 / 13" Plastic reel (8mm tape)
RU
Suffix "G"
Sub SMA
RQ
R3 Sub SMA
RF Sub SMA
1,800 / 7" Plastic reel (12mm tape)
PREFERRED P/N
R2 Sub SMA
M2 Sub SMA
Sub SMA
MQ Sub SMA
RATINGS AND CHARACTERISTICS CURVES
SS16L RUG
SS16LHRU H RU
RV Sub SMA
MT Sub SMA
10,000 / 13" Plastic reel (8mm tape)
PACKING
7,500 / 13" Paper reel (8mm tape)
7,500 / 13" Paper reel (12mm tape)
SS1XL
(Note 1)
1,800 / 7" Plastic reel (8mm tape)
MH
3,000 / 7" Plastic reel (12mm tape)
10,000 / 13" Paper reel (8mm tape)
PACKING
CODE
GREEN COMPOUND
CODE
Prefix "H"
PACKING CODE
T
aiwan Semiconducto
r
10,000 / 13" Plastic reel (12mm tape)
10,000 / 13" Paper reel (12mm tape)
7,500 / 13" Plastic reel (12mm tape)
RH Sub SMA
3,000 / 7" Plastic reel (8mm tape)
DESCRIPTION
RU
SS12L thru SS115L
SS16L RU RU
ORDERING INFORMATION
EXAMPLE
Note 1: "x" defines voltage from 20V (SS12L) to 150V (SS115L)
AEC-Q101
QUALIFIED
G
Sub SMA
AEC-Q101 qualified
GREEN COMPOUND
CODE
AEC-Q101
QUALIFIED
Green compound
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
SS12L-SS14L
SS15L-SS115L
0
10
20
30
40
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXUMUM FORWARD SURGE CURRENT
8.3ms Single Half
Sine-Wave
0.1
1
10
100
1000
10000
0 20 40 60 80 100 120 140
INTANTANEOUS REVERSE CURRENT. (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TJ=25℃
TJ=75℃
TJ=100℃
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
SS13L-SS14L
SS12L
SS15L-SS16L
SS115L
SS19L-SS110L
Min Max Min Max
B 1.70 1.90 0.067 0.075
C 2.70 2.90 0.106 0.114
D 0.16 0.30 0.006 0.012
E 1.23 1.43 0.048 0.056
F 0.80 1.20 0.031 0.047
G 3.40 3.80 0.134 0.150
H 2.45 2.60 0.096 0.102
I 0.35 0.85 0.014 0.033
J 0.00 0.10 0.000 0.004
P/N = Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1308028 Version: N13
SS12L thru SS115L
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
SUGG ESTED PAD LAY OUT
Symbol Unit (mm)
A1.4
B1.2
Unit (inch)
0.055
0.047
0.122
0.075
0.169
MARKING DIAGRAM
C3.1
D1.9
E4.3
1
10
100
1000
0.1 1 10 100
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vslg=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308028 Version: N13
SS12L thru SS115L
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
