2N4033
PNP SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4033 type is a
PNP silicon transistor manufactured by the epitaxial
planar process, designed for high current general
purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.0 A
Power Dissipation PD 1.25 W
Power Dissipation (TC=25°C) PD 7.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 140 °C/W
Thermal Resistance ΘJC 20 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=60V 50 nA
ICBO V
CB=60V, TA=150°C 50 μA
IEBO V
EB=5.0V 10 μA
BVCBO I
C=10μA 80 V
BVCEO I
C=10mA 80 V
BVEBO I
E=10μA 5.0 V
VCE(SAT) I
C=150mA, IB=15mA 0.15 V
VCE(SAT) I
C=500mA, IB=50mA 0.50 V
VBE(SAT) I
C=150mA, IB=15mA 0.90 V
VBE(ON) V
CE=0.5V, IC=500mA 1.10 V
hFE V
CE=5.0V, IC=0.1mA 75
hFE V
CE=5.0V, IC=100mA 100 300
hFE V
CE=5.0V, IC=500mA 70
hFE V
CE=5.0V, IC=1.0A 25
fT V
CE=10V, IC=50mA 100 400 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 20 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz 110 pF
ton I
C=500mA, IB1=50mA 100 ns
ts I
C=500mA, IB1=IB2=50mA 350 ns
tf I
C=500mA, IB1=IB2=50mA 50 ns
R1 (15-March 2012)
www.centralsemi.com
2N4033
PNP SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (15-March 2012)
