Low IR SMD Schottky Barrier Rectifiers
Page 1
REV: B
Features
- Ultra high-speed switching.
Mechanical data
- Case: Molded plastic, SOD-123
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Polarity: Indicated by cathode band.
- Weight: 0.010 grams(approx.).
CDBW140R-HF Thru. CDBW1100R-HF
Maximum Ratings and Electrical Characteristics
Dimensions in inches and (millimeter)
QW-JL011
Comchip Technology CO., LTD.
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS voltage
Forward Surge Current
Reverse Current
CDBW
140R-HF
CDBW
160R-HF
CDBW
1100R-HF Units
Symbol
Parameter
VRRM
VDC
VRMS
40
28
40
60
42
60
100
70
100
V
V
V
A
A
mA
Max. Instantaneous Forward Voltage @
1.0A, TA=25°C VF0.55 0.75 0.86 V
Junction Temperature Range TJ-50 to +150 °C
Parameter Conditions
on rate load (JEDEC method)
8.3ms single half sine-wave superimposed
Forward Rectified Current See Fig.1
Thermal Resistance
Diode Junction Capacitance
VR =VRRM TA=25°C
f=1MHZ and applied 4V DC reverse Voltage
Junction to ambient
Symbol
IO
IFSM
IR
RθJA
CJ
MIN. TYP. MAX.
°C/W
pF
1.0
5.5
0.1
88
120
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
- Low profile surface mount applications
in order to optimize board space.
- Low power loss, high efficiency.
- High current capability, low forward voltage drop.
- High surge capability.
- Guard ring for overvoltage protection.
Units
- Epoxy: UL94-V0 rate flame retardant.
- Silicon epitaxial planar chip, metal silicon junction.
Reverse Voltage: 40 to 100 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free SOD-123
0.152(3.85)
0.140(3.55)
0.016(0.40)
0.004(0.10)
0.112(2.85)
0.100(2.55)
0.071(1.80)
0.055(1.40)
0.024(0.60)
0.020(0.50)
0.004(0.10)Typ.
-50 to +125
Storage Temperature Range TSTG -50 to +150 °C
Company reserves the right to improve product design , functions and reliability without notice.
-50 to +125
0.012(0.30)
0.001(0.02)
0.045(1.15) Typ.
Cathode Anode