© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17 1Publication Order Number:
BD437/D
BD435G, BD437G, BD439G,
BD441G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors can be
used for amplifier and switching applications.
Features
•Complementary Types are BD438 and BD442
•These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD435G
BD437G
BD439G
BD441G
VCEO 32
45
60
80
Vdc
Collector−Base Voltage
BD435G
BD437G
BD439G
BD441G
VCBO 32
45
60
80
Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current IC4.0 Adc
Base Current IB1.0 Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD36
288 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 3.5 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
MARKING DIAGRAM
ORDERING INFORMATION
Y = Year
WW = Work Week
BD4xx = Device Code
xx = 35, 37, 37T, 39, 41
G = Pb−Free Package
BD435G TO−225
(Pb−Free) 500 Units/Box
BD437G TO−225
(Pb−Free) 500 Units/Box
BD437TG TO−225
(Pb−Free) 50 Units/Rail
BD439G TO−225
(Pb−Free) 500 Units/Box
BD441G TO−225
(Pb−Free) 500 Units/Box
BASE 3
EMITTER 1
COLLECTOR 2, 4
TO−225
CASE 77−09
STYLE 1
123
YWW
BD4xxG
BD435G, BD437G, BD439G, BD441G
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Collector−Emitter Breakdown Voltage
(IC = 100 mA, IB = 0)
BD435G
BD437G
BD439G
BD441G
V(BR)CEO
32
45
60
80
−
−
−
−
−
−
−
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mA, IB = 0)
BD435G
BD437G
BD439G
BD441G
V(BR)CBO
32
45
60
80
−
−
−
−
−
−
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mA, IC = 0) V(BR)EBO 5.0 − − Vdc
Collector Cutoff Current
(VCB = 32 V, IE = 0)
BD435G
(VCB = 45 V, IE = 0)
BD437G
(VCB = 60 V, IE = 0)
BD439G
(VCB = 80 V, IE = 0)
BD441G
ICBO
−
−
−
−
−
−
−
−
0.1
0.1
0.1
0.1
mAdc
Emitter Cutoff Current
(VEB = 5.0 V) IEBO − − 1.0 mAdc
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BD435G
BD437G
BD439G
BD441G
hFE
40
30
20
15
−
−
−
−
−
−
−
−
−
DC Current Gain
(IC = 500 mA, VCE = 1.0 V)
BD435G
BD437G
BD439G, BD441G
hFE
85
85
40
−
−
−
475
375
475
−
DC Current Gain
(IC = 2.0 A, VCE = 1.0 V)
BD435G
BD437G
BD439G
BD441G
hFE
50
40
25
15
−
−
−
−
−
−
−
−
−
Collector Saturation Voltage
(IC = 2.0 A, IB = 0.2 V)
BD435G
(IC = 3.0 A, IB = 0.3 A)
BD437G, BD439G, BD441G
VCE(sat)
−
−
−
−
0.5
0.8
Vdc
Base−Emitter On Voltage
(IC = 2.0 A, VCE = 1.0 V) VBE(on) − − 1.1 Vdc
Current−Gain − Bandwidth Product
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz) fT3.0 − − MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BD435G, BD437G, BD439G, BD441G
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3
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
0
0.05
1.6
1.2
0.8
0.4
1.0 2.0 10 70 500
IC = 10 A 100 mA 1.0 A
0.1 100205.0
TJ = 25°C
3.0 300.07 300200507.00.2 0.3 0.5 0.7
3.0 A
Figure 2. Current Gain
200
00.01
180
160
80
0.1
BD439, 441
0.02 30.30.2 1 520.50.03 0.05 IC, COLLECTOR CURRENT (AMP)
hFE, CURRENT GAIN (NORMALIZED)
BD433, 435, 437
140
120
100
60
40
20
2.0
0.005 IC, COLLECTOR CURRENT (AMP)
1.6
1.2
0.8
0.6
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
Figure 3. “On” Voltage
0.02 0.030.05 0.1 0.2
VBE @ VCE = 2.0 V
0.01 0.3 0.5 1.0 2.0 3.0 4.
0
Figure 4. Active Region Safe Operating Area
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
4.0
1.0
0.1 2.0 10 20 100
0.5
I
C
, COLLECTOR CURRENT (AMP)
TJ = 150°Cdc
5 ms
1.0 5.0 50
SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
BD437
BD439
BD441
BD435G, BD437G, BD439G, BD441G
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4
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
DIM MIN MAX
MILLIMETERS
D10.60 11.10
E7.40 7.80
A2.40 3.00
b0.60 0.90
P2.90 3.30
L1 1.27 2.54
c0.39 0.63
L14.50 16.63
b2 0.51 0.88
Q3.80 4.20
A1 1.00 1.50
e2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
ec
L
A1
A
FRONT VIEW BACK VIEW
FRONT VIEW SIDE VIEW
123321
4
PIN 4
BACKSIDE TAB
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
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Phone: 81−3−5817−1050
BD437/D
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