Feb.1999
MITSUBISHI THYRISTOR MODULES
TM60SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Welders
TM60SZ-M
•IT (AV) Average on-state current ............ 60A
•VRRM Repetitive peak reverse voltage
................ 400V
•VDRM Repetitive peak off-state voltage
................ 400V
•TRIPLE ARMS
•Non-Insulated Type
93.5
80
26
2–φ6.5
12.5
3–M5
K
3
K
2
K
1
G
3
K
3
G
2
K
2
G
1
K
1
K
3
K
2
K
1
17.5 20 20
30
21
6.5
9
K
3
G
3
K
3
K
2
G
2
K
1
G
1
K
2
K
1
A
CR
3
CR
2
CR
1
A
Tab#110, t=0.5
LABEL
not Recommend
for New Design
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM60SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
M
400
480
320
400
480
320
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
N·m
kg·cm
N·m
kg·cm
g
Conditions
Three-phase, half-wave, TC=125°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=150°C
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
95
60
1200
6.0 × 103
50
5.0
0.5
10
5.0
2.0
–40~+150
–40~+125
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
Limits
Symbol
IRRM
IDRM
VTM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Test conditions
Tj=150°C, VRRM applied
Tj=150°C, VDRM applied
Tj=150°C, ITM=180A, instantaneous meas.
Tj=150°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2Ω
Tj=150°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/3 module)
Case to fin, conductive grease applied (per 1/3 module)
Min.
—
—
—
200
—
0.25
15
—
—
Typ.
—
—
—
—
—
—
—
—
—
Max.
25
25
1.2
—
3.0
—
100
0.3
0.3
not Recommend
for New Design
Feb.1999
–1
10
–2
10
–3
10
0
10
0
10
1
10
1
10
0
10
4
10
3
10
2
10
1
10
–1
10
3
10
2
10
1
10
0
10
753275327532
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=2.0A
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=25°C
0.6
7
5
3
2
7
5
3
2
7
5
3
2
0.8 1.0 1.6 2.01.41.2 1.8
T
j
=150°C
705030207532
0
200
1600
101 100
400
600
800
1000
1200
1400
753275327532
0.40
0
7532
0.05
0.10
0.15
0.20
0.25
0.30
0.35
00803010 50 70
80
10
20
30
40
50
60
70
20 40 60
θ=30°
120°
90°
180°
60°
150
70 0608010 20 50
80
90
100
110
120
130
140
30 40 70
θ=30° 60° 90°
θ
360°
180°
120°
PER SINGLE ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
θ
360°
MITSUBISHI THYRISTOR MODULES
TM60SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
ON-STATE CURRENT (A)GATE VOLTAGE (V)
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
CONDUCTION TIME
(CYCLE AT 60Hz)
ON-STATE VOLTAGE (V)
GATE CURRENT (mA) TIME (s)
MAXIMUM AVERAGE ON-STAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE POWER
DISSIPATION (W)
CASE TEMPERATURE (°C)
not Recommend
for New Design
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM60SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A)
CASE TEMPERATURE (°C)
AVERAGE ON-STATE POWER
DISSIPATION (W)
100 0 10020
150
80
110
40 60
120
130
140 θ
360°
θ=30° 60° 270° DC180°90°
120°
RESISTIVE,
INDUCTIVE
LOAD
00 10020
100
80
20
40 60
40
60
80
θ
360°
θ=30°
60°
270° DC
180°
120°
90°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
PER SINGLE
ELEMENT
not Recommend
for New Design
