I SOT89 NPN SILICON PLANAR MEDIUM ISSUE 3- POWER TRANSISTORS FEBRUARY 1996 PARTMARKING m 0 DETAILS: - C - BA BCX54-10 - BC BCX54- 16 - BD BCX55 - BE BCX55-10 - BG BCX55- 16 - BM BCX56 - BH BCX56-10 - BK BCX5616 - BL BCX54 COMPLEMENTARY BCX54 - BCX54 BCX51 E \@ TYPES:BCX55 - BCX56 BCX52 - BCX53 C "B I 1 ABSOLUTE MAXIMUM RATINGS. I PARAMETER L-- I SYMBOL -------------------------- ~ollector-B --- . -- -- 4----- I -4 BCX54 ---- I BCX55 I BCX56 --4------ --L-- I ---4 UNIT ---- -- ase Voltage ------ [!"'E:to'-Emimervo'tag~ ~rnitter-Base [~ak Voltage -1%9-1-- Iconti,luous Collector L ---- --.- ------------.--------- k. -ower I Ilr --c=---~. Current _.__15K!_ Dissipation Operating .--.5 ------2 1!!!- 1 Pulse Current and Storage Temperature Range I v A .1. -- 1 --.----.. L at Tamb=25 C ._.l_. . Ti:T,tg ------ .1 I A L-.w._._ 1 `c -65 to + 150 I ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). ) PARAMETER SYMBOL MIN. TYP. t.. . MAX, UNIT CONDITIONS, `-T`-"1-"1: Collector-Base Voltage Breakdown CollectorEmitter Breakdown Voltage BCX54 BCX55 BCX56 V(BI,)CBO BCX54 BCX55 BCX56 V, B,,)CEO Emitter-Base Breakdown Voltage --. --.---- -.-...--.--..---- ---- Collector k-- T Cut-Off Emitter Cut-Off ---Collector-Emitter . .. . Base-Emitter ,--. Static Ratio Current Saturation Voltage ---- 4 F V(BR}EBO -- Ic =lOmA' 5 v IE =lOyA VA VA VCB .30V VCB=30V, Taw,b=150"C 01 20 -- + VcE@ Voltage Transfer `Won) ~ h~~ 25 40 25 63 :100 + -10 -16 Measured v --,---- C(lrrent under pulsed -- fT conditions. !150 Pulse width= 300~s 3-35 20 nA 05 v 1,0 v 250 r `+ Frequency Ic =IOOUA --- 45 60 80 EB( -f Transition V CB(I Current Turn-On Forward 45 60 100 -- 160 250 I MHz +- Duty cycle s2% .-- Ic =500mA, IB =50mA* -------- Ic =500mA1~c. Ic Ic Ic Ic Ic =2V* -----. -- =5mA, VCE :.2V* =150mA, VCE =2V* =500mA, VCE =2V* =150mA, Vc. =2V' =150mA, Vc. =2V* Ic =50mA, f=100MHz Vc~ =1OV, V,-.=1OV, f=l MHz