SOT89 NPN SILICON PLANAR IBCX54
MEDIUM POWER TRANSISTORS
ISSUE 3- FEBRUARY 1996 0 m
PARTMARKING DETAILS: -C
BCX54 -BA BCX54-10 -BC BCX54- 16 -BD
BCX55 -BE BCX55-10 -BG BCX55- 16 -BM
BCX56 -BH BCX56-10 -BK BCX5616 -BL
\@ E
COMPLEMENTARY TYPES:- C
BCX54 -BCX51 BCX55 -BCX52 BCX56 -BCX53 I“B
1
ABSOLUTE MAXIMUM RATINGS.
IPARAMETER ISYMBOL IBCX54 IBCX55 IBCX56 IUNIT
L–- —–—-—-–—--—–-———— — — 4——– -4 –—- -–4—–-— --L-- -—4 --— --
~ollector-B ase Voltage
—- .———
[!”’E:to’-Emimervo’tag~
~rnitter-Base Voltage -1%9–1-- .--.5 ------- ._.l_. v
[~ak Pulse Current 1!!!– 12IA
.1.
Iconti,luous Collector Current Ilr I1IA
L---- –-.– -—--——---.–-–——— —c=—-~. ——.-–—.. —–-— .1
k.-- _.__15K!_ L.
ower Dissipation at Tamb=25° C1
L-.w._._
Operating and Storage Temperature Range Ti:T,tg -65 to +150 ‘c I
ELECTRICAL CHARACTERISTICS (at Tamb =25°C unless otherwise stated).
)PARAMETER SYMBOL MIN. TYP.
t.. . ‘-”
1-”1:
Collector-Base Breakdown BCX54 V(BI,)CBO 45
Voltage BCX55 60
BCX56 100
CollectorEmitter BCX54 V, B,,)CEO 45
Breakdown Voltage BCX55 60
BCX56 80
Emitter-Base Breakdown Voltage V(BR}EBO 5
—. —.-—- -.-...—.—..—— —— —
Collector Cut-Off Current CB(I
k—
-f +F
——
Emitter Cut-Off Current
---- EB( —
Collector-Emitter Saturation Voltage VcE@ +
.... —,—— —
Base-Emitter Turn-On Voltage
,—. ‘Won) ~
Static Forward C(lrrent Transfer h~~ 25
Ratio 40
25
-10 63
-16 :100
r ‘+ —
Transition Frequency fT !150
T
MAX, UNIT
‘-T-
V
-—
v
4
v
01 -
VA
20 VA
20 nA
05 v
1,0 v
250 I
+-
160
250
MHz
●Measured under pulsed conditions. Pulse width= 300~s Duty cycle s2%
CONDITIONS,
Ic =IOOUA
Ic =lOmA’
IE=lOyA .—
VCB.30V
VCB=30V, Taw,b=150”C
Ic =500mA, IB =50mA*
————
Ic =500mA1~c. =2V*
—-—. —
Ic =5mA, VCE:.2V*
Ic =150mA, VCE=2V*
Ic =500mA, VCE=2V*
Ic =150mA, Vc. =2V’
Ic =150mA, Vc. =2V*
Ic =50mA, Vc~ =1OV,
f=100MHz
V,-.=1OV, f=l MHz
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