6387255 MOTOROLA SC (DIODES/OPTO) gq, pe Lab7255 0078001 & I , TI -I/ MOTOROLA 1N941,A,B m@ SEMICONDUCTOR xy thru a TECHNICAL DATA | | . | 1N945,A,B PEP ek lee eon. DP e tes oLes a TEMPERATURE- COMPENSATED SILICON ZENER REFERENCE DIODES 11.7 V, 500 mW TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Temperature-compensated zener reference diodes utilizing an oxide-passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Designer's Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. Limit data representing device characteristic boundaries are given to facilitate worst case design. MAXIMUM RATINGS Junction Temperature: -55 to +1 75C Storage Temperature: 5 to +1 75C DC Power Dissipation: 500 mW @ Tp = 25C MECHANICAL CHARACTERISTICS Tr 8 CASE: Hermeticatly sealed, all-glass DIMENSIONS: See outline drawing. FINISH: Ali external surfaces are corrosion resistant and teads are readily D|/ solderable and weldable. POLARITY: Cathode indicated by polarity band. K WEIGHT: 0.2 Gram (approx) MOUNTING POSITION: Any A ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted t+ , Vz= 11.7 V + 5,0%* @ Iz7 = 7.6 mA) Maximum Ambient Maximum K Voitage Test Temperature Dynamic JEDEC Change Temperature Coefficient Impedance TypeNo. | 4Vz {Volts} c fC Zz7 (Ohms) (Note 4) (Note 2) 41 (Note 2} (Note 3) 1N941 0.088 0.01 1N942 0.044. 0.005 1N943 0.018 0, +25, +75 0.002 30 1N944 0.009 0.001 1NO45 0.004 0.0005 ANO4iA 0.181 0.01 4NS424 0.090 0.005 1NS43A 0.036 55, 0, +25, 0.002 30 AML JEDEC dimensions and notes apply iNS44A 0.018 +75, +700 0.001 1NO45A 0.009 0.0005 CASE 51-02 DO-204AA IN941B 0.239 0.01 GLASS 1N9428 0.120 0.005 . 55,0, +25, NOTES: N943B 04 : a aoe +75, +100, +150 0.002 a0 1. PACKAGE CONTOUR OPTIONAL WITHIN DIA B AND INO44B 5 0.004 LENGTH A. HEAT SLUGS, IF ANY, SHALL RE INCLUDED 1N945B 0.012 . 0.0005 WITHIN THIS CYLINDER, BUT SHALL NOT BE SURJECT TO THE MIN LIMIT OF OIA B. *Tighter-tolerance units available on special request. 2. LEAD DIA NOT CONTROLLED IN ZONES F, TO ALLOW FOR FLASH, LEAD FINISH BUILOUP, AND MINOR IRREGULARITIES OTHER THAN HEAT SLUGS.6367255 MOTOROLA SC (DIODES/OPTO) Tb pe Puauzess o07800e 4 IT 1N941, A, B thru 1N945, A, B T= {t-l/ MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE (With Iz7 = 7.5 mA 40.01 mA) (See Note 4) 1N941 thru 1N945 . FIGURE 1a r : : . FIGURE 1b (Referenced to.0C) I avz= ta mv 4Vz, MAXIMUM VOLTAGE CHANGE (mv) \: 1N941 0 ri) 50 15 Ta. AMBIENT TEMPERATURE (OC) MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE (With Iz7 = 7.5 mA 0.01 mA) (Sea Note 4} ING41A thru 1N945A FIGURE 2a FIGURE 2b ( y. INS41A 1N342A INS43A INS44A INS45A | 1NS44A INS45A INS45A 8V7, MAXIMUM VOLTAGE CHANGE (mv) (Referenced to -55C) IN943A 1NQ41A 65 0 60 100 55 9 50 100 Ta, AMBIENT TEMPERATURE (C}6367255 MOTOROLA 5C (DIODES/OPTO) Sh DE b367255 go7a003 0 i 4N941, A, B thru 1N945, A, B | T-If-// MAXIMUM VOLTAGE CHANGE versus TEMPERATURE (with Iz7 = 7.5 mA 0.01 mA) (See Note 4) 1N941B thru 1N9458 FIGURE 3a Pegi FIGURE 3b 1N941B 1N942B 1N944B 1NS45B (Referenceto -55C} iN3456 ) 1N945B AVzZ, MAXIMUM VOLTAGE CHANGE (mY) 1N9416 \ -50 INS41B 13428 55 0 60 10 150 -55 Q 80 100 150 Ta, AMBIENT TEMPERATURE (C) FIGURE 4 ZENER CURRENT versus MAXIMUM FIGURE 5 MAXIMUM ZENER IMPEDANCE versus VOLTAGE CHANGE (At specified temperatures) ZENER CURRENT (See Note 5) {See Note 3) j MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CUAVES: MORE THAN 95% OF THE UNITS ARE IN THE AANGES INDICATEO BY THE CURVES | 850C +7500 +8000 Iz, ZENER CURRENT (mA) 2z, MAXIMUM ZENER IMPEDANCE (OHMS) 1 30 a 10 10 100 2Nz, MAXIMUM VOLTAGE CHANGE iz, ZENER CURRENT (mA} (Referenced to 127 = 7.5 mA} > _ [co]6367255 MOTOROLA SC (DIODES/OPTO) 1N941, A, B thru 1N945, A, B Iz7=7.5 mA = 500 MAXIMUM NOISE (V rms} FIGURE 6 DISTRIBUTION OF MAXIMUM GENERATED NOISE THl/-I/ 100 200 400 1000 fg, CENTER FREQUENCY (kHz} NOTE 1: Types 1N9418, 1N943B, and 1N944B are available to MIL-S-19500/ 157 and MEG-A-LIFE 11, Levels 1, 2, & 3, specifications. NOTE 2: Voltage Variation (aVz) and Temperature Coefficient. All referance diades are characterized by the box method. This guarantees a maximum voltage variation (aVz) over the specified temperature range, at the specified test current (177), verified by tests at indicated temperature points within the range. This method of indicating voltage stability is now used for JEDEC registration as well as for military quatification. The former method of indicating voltage stability by means of temperature coefficient accurately reflects the voltage deviation at the temperature extremes, but is not necessarily accurate within the temperature range because reference diodes have a nonlinear temperature relationship. The temperature coefficient, therefore, is given only as a reference. NOTE 3: Zener impedance Derivation The dynamic zener impedance, 227. is derived from the 60-H2 ac voltage drop which results when an ac current with an rms value equal to 10% of the de zener current, IZT, is superimposed on I77. ae ae -_ Curves showing the variation of zener impedance with zener current for each series are given in Figure 5. A cathode-ray tube curve-trace test on a sample basis is used to ensure that each zener charscteristic has a sharp and stable knee region. NOTE 4: These graphs can be used to determine the maximum voltage change of any device in the series over any specific temperature range. For example, a temperature change from +25 to +50C will cause a volt- age change no greater than +29 mV or -28 mV for 1N941, as iltus- trated by the dashed lines in Figure 1. The boundaries given are maximum values. For greater resolution, expanded views of the shaded areas in Figures ta, 2a, and 3a are shown in Figures 1b, 2b, and 3b respectively. NOTE 5: The maximum voitage change, Vz, in Figure 4 is due entirely to the impedance of the device. if both temperature and {77 are varied, then the total voltage change may he obtained by adding sV7z in Fig- ure 4 to the aVz in Figure 1, 2, or 3 for the device under considera- tion. If the device is to be operated at some stable current other than the specified test current, a new set of characteristics may be plotted by superimposing the data in Figure 4 on Figure 1, 2, or 3. 4-20 96 DE 6367255 0078004 1 IT