1
http://www.fujielectric.com/products/semiconductor/
6MBP30VAA060-50 IGBT Modules
IGBT MODULE (V series)
600V / 30A / IPM
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specied)
Items Symbol Min. Max. Units
Collector-Emitter Voltage (*1) VCES 0 600 V
Short Circuit Voltage VSC 200 400 V
Collector Current
DC IC- 30 A
1ms Ic pulse - 60 A
Duty=100% (*2) -IC- 30 A
Collector Power Dissipation 1 device (*3) PC- 137 W
Supply Voltage of Pre-Driver (*4) VCC -0.5 20 V
Input Signal Voltage (*5) Vin -0.5 VCC+0.5 V
Alarm Signal Voltage (*6) VALM -0.5 VCC V
Alarm Signal Current (*7) IALM - 20 mA
Junction Temperature Tj- 150 ºC
Operating Case Temperature Topr -20 110 ºC
Storage Temperature Tstg -40 125 ºC
Solder Temperature (*8) Tsol - 260 ºC
Isolating Voltage (*9) Viso - AC2500 Vrms
Screw Torque Mounting (M4) - - 1.7 Nm
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 6 and 4, 9 and 7, 11 and 10.
Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7, 12~14 and 10.
Note *6: VALM shall be applied to the voltage between terminal No.15 and 10.
Note *7: IALM shall be applied to the input current to terminal No.15.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1minute.
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• Compatible with existing IPM-N series packages
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
1404a
JUNE 2015
2
IGBT Modules
6MBP30VAA060-50
http://www.fujielectric.com/products/semiconductor/
3
Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specied)
Items Symbol Conditions Min. Typ. Max. Units
Inverter
Collector Current at off signal input ICES VCE=600V - - 1.0 mA
Collector-Emitter saturation voltage VCE(sat) IC=30A Terminal - - 1.9 V
Chip - 1.4 - V
Forward voltage of FWD VFIF=30A Terminal - - 2.3 V
Chip - 1.8 - V
Switching time
ton VDC =300V, Tj=125ºC
IC=30A
1.1 - - µs
toff - - 2.1 µs
trr VDC =300V
IF=30A - - 0.3 µs
Supply current of P-side pre-driver (per one unit) Iccp Switching Frequency= 0-15kHz
TC=-20~110ºC
- - 9 mA
Supply current of N-side pre-driver Iccn - - 23 mA
Input signal threshold voltage Vinth(on) Vin-GND ON 1.2 1.4 1.6 V
Vinth(off) OFF 1.5 1.7 1.9 V
Over Current Protection Level IOC Tj=125ºC 45 - - A
Over Current Protection Delay time tdOC Tj=125ºC - 5 - µs
Short Circuit Protection Delay time tSC Tj=125ºC - 2 3 µs
IGBT Chips Over Heating Protection Temperature Level TjOH Surface of IGBT Chips 150 - - ºC
Over Heating Protection Hysteresis TjH - 20 - ºC
Under Voltage Protection Level VUV 11.0 - 12.5 V
Under Voltage Protection Hysteresis VH0.2 0.5 - V
Alarm Signal Hold Time
tALM(OC)
ALM-GND
TC=-20~110ºC
1.0 2.0 2.4 ms
tALM(UV) VCC 10V 2.5 4.0 4.9 ms
tALM(TjOH) 5.0 8.0 11.0 ms
Resistance for current limit RALM 960 1265 1570 Ω
Thermal Characteristics (TC = 25ºC)
Items Symbol Min. Typ. Max. Units
Junction to Case Thermal Resistance (*10) Inverter IGBT Rth(j-c)Q - - 0.91 °C/W
FWD Rth(j-c)D - - 1.50 °C/W
Case to Fin Thermal Resistance with Compound Rth(c-f) - 0.05 - °C/W
Note *10: For 1device, the measurement point of the case is just under the chip.
Noise Immunity (VDC =300V, VCC =15V)
Items Conditions Min. Typ. Max. Units
Common mode rectangular noise Pulse width 1μs, polarity ±, 10 minute
Judge : no over-current, no miss operating ±2.0 - - kV
Recommended Operating Conditions
Items Symbol Min. Typ. Max. Units
DC Bus Voltage VDC - - 400 V
Power Supply Voltage of Pre-Driver VCC 13.5 15.0 16.5 V
Switching frequency of IPM fSW - - 20 kHz
Arm shoot through blocking time for IPM's input signal tdead 1.0 - - µs
Screw Torque (M4) - 1.3 - 1.7 Nm
Weight
Items Symbol Min. Typ. Max. Units
Weight Wt- 80 - g
2
3
IGBT Modules
6MBP30VAA060-50
http://www.fujielectric.com/products/semiconductor/
Block Diagram
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
U
V
W
Vcc
VinX
VinY
VinZ
ALM
VccV
GNDV
P
VccU
GNDU
VinU
VinV
VccW
GNDW
VinW
N
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
RALM
4
IGBT Modules
6MBP30VAA060-50
http://www.fujielectric.com/products/semiconductor/
5
Characteristics (Representative)
Power supply current vs. Switching frequency
Tj=25ºC (typ.)
0 5 10 15 20 25 12 13 14 15 16 17 18
Power supply current : ICC [mA]
N-side
P-side
VCC=17V
VCC=15V
VCC=13V
VCC=17V
VCC=15V
VCC=13V
Switchig frequency : fSW [kHz]
40
35
30
25
20
15
10
5
0
15
12
9
6
3
0
0 20 40 60 80 100 120 140
Under voltage vs. Junction temperature (typ.)
Junction temperature : Tj [ºC]
Alarm hold time vs. Power supply voltage (typ.)
Power supply voltage : VCC [V]
10
8
6
4
2
0
12 13 14 15 16 17 18
Under voltage : VUV [V]Alarm hold time : TALM [msec]
tALM(TjOH)
tALM(OC)
3
2.5
2
1.5
1
0.5
0
Input signal threshold voltage :
Vinth (on), Vinth (off) [V]
Input signal threshold voltage
vs. Power supply boltage (typ.)
Vinth (off)
TC=25~125ºC
Vinth (on)
Power supply voltage : VCC [V]
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140
12 13 14 15 16 17 18
Under voltage hysterisis
vs. Junction temperature (typ.)
Under voltage hysterisis : VH [V]
Junction temperature : Tj [ºC]
200
150
100
50
0
Over heating characteristics
TjoH, TjH vs. VCC (typ.)
Over heating protection : TjoH [ºC]
OH hysterisis : TjH [ºC]
Power supply voltage : VCC [V]
TjoH
TjH
4
5
IGBT Modules
6MBP30VAA060-50
http://www.fujielectric.com/products/semiconductor/
Collector current vs. collector-Emitter voltage
Tj=25ºC [Chip] (typ.)
Collector current : IC [A]
Collector-Emitter voltage : VCE [V]
60
50
40
30
20
10
0
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Collector current vs. collector-Emitter voltage
Tj=125ºC [Chip] (typ.)
Collector-Emitter voltage : VCE [V]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward voltage : VF [V]
Collector current : IC [A]Forward current : IF [A]
Collector current : IC [A]
Collector current vs. collector-Emitter voltage
Tj=25ºC [Terminal] (typ.)
Collector-Emitter voltage : VCE [V]
Collector current vs. collector-Emitter voltage
Tj=125ºC [Terminal] (typ.)
Collector current : IC [A]
Forward current vs. Forward voltage
[Terminal] (typ.)
Forward current : IF [A]
Forward voltage : VF [V]
VCC=17V
VCC=15V
0 0.5 1 1.5 2 2.5
VCC=17V
VCC=15V
VCC=13V VCC=13V
0 0.5 1 1.5 2 2.5
VCC=17V
VCC=15V
VCC=13V VCC=17V
VCC=15V
VCC=13V
0 0.5 1 1.5 2 2.5
Collector-Emitter voltage : VCE [V]
0 0.5 1 1.5 2 2.5 3
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Tj=25ºC
Tj=25ºC
Tj=125ºC Tj=125ºC
0 0.5 1 1.5 2 2.5
60
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5
6
IGBT Modules
6MBP30VAA060-50
http://www.fujielectric.com/products/semiconductor/
7
0
50
100
150
200
0 50 100 150
0
50
100
150
0 50 100 150
Switching Loss vs. Collector Current (typ.)
VDC=300V, VCC=15V, Tj=25ºC
0 10 20 30 40 50 60
Switching loss : Eon, Eoff, Err [mJ/cycle]
Eon
Eoff
Err
Eon
Eoff
FWD
IGBT
Err
Collector Current : IC [A]
4
3
2
1
0
80
60
40
20
0
0 200 400 600 800
Reversed biased safe operating area
VCC=15V, Tj 125ºC [Main Terminal] (min.)
Collector-Emitter voltage : VCE [V]
Power derating for IGBT (max.)
[per device]
Case Temperature : TC [ºC]
Collector current : IC [A]Collector Power Dissipation : PC [W]
Switching loss : Eon, Eoff, Err [mJ/cycle]
Switching Loss vs. Collector Current (typ.)
VDC=300V, VCC=15V, Tj=125ºC
Collector Current : IC [A]
10
1
0.1
0.001 0.01 0.1 1 10
Transient thermal resistance (max.)
Thermal resistance : Rth(j-c) [ºC/W]
Pulse width : PW [sec]
Power derating for FWD(max.)
[per device]
Collector Power Dissipation : PC [W]
Case Temperature : TC [ºC]
0 10 20 30 40 50 60
4
3
2
1
0
RBSOA
(Repetitive pulse)
6
7
IGBT Modules
6MBP30VAA060-50
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VDC=300V, VCC=15V, Tj=25ºC
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Switching time : ton, toff, tr [nsec]
ton
toff
tf
10000
1000
100
10
0 10 20 30 40
Reverse recovery characteristics (typ.)
trr, Irr vs. If
Forward current : IF [A]
Reverse recovery current : Irr [A]
Reverse recovery time : trr [nsec]
10000
1000
100
10
Switching time : ton, toff, tr [nsec]
Switching time vs. Collector current (typ.)
VDC=300V, VCC=15V, Tj=125ºC
ton
toff
tf
Collector current : IC [A]Collector current : IC [A]
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Over current protection vs. Junction temperature
(typ. ) VCC=15V
Over current protection level : IOC [A]
Junction temperature : Tj [ºC]
trr Tj=125ºC
trr Tj=25ºC
Irr Tj=125ºC
Irr Tj=25ºC
1000
100
10
1
Outline Drawings, mm
Weight: 80g(typ.)
8
IGBT Modules
6MBP30VAA060-50
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of June 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.
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Technical Information IGBT Modules
2015-10
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