AOD7N65/AOI7N65
650V,7A N-Channel MOSFET
General Description Product Summary
750V@150℃
I
D
(at V
GS
=10V) 7A
R
DS(ON)
(at V
GS
=10V) < 1.56Ω
100% UIS Tested!
100% R
g
Tested!
Symbol
V
DS
The AOD7N65 & AOI7N65 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
DS
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum
Drain-Source Voltage
650
G
D
S
S
S
Top View
TO252
DPAK
Bottom View
G
G
D
D
S
S
Top View
Bottom View
TO251A
IPAK
AOD7N65 AOI7N65
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
°C/W
°C/W
0.5
0.5
0.7
mJ
Avalanche Current
C
144Repetitive avalanche energy
C
Derate above 25
o
C
178
1.4
A3.1
Single pulsed avalanche energy
H
288 mJ
V/ns5
P
D
V
Drain-Source Voltage
650
V±30Gate-Source Voltage
T
C
=100°C A
I
D
T
C
=25°C 7
4.3
23Pulsed Drain Current
C
Continuous Drain
Current
B
°C
Junction and Storage Temperature Range -50 to 150 °C
Power Dissipation
B
Maximum Junction-to-Ambient
A,G
T
C
=25°C
-
55
Maximum
Thermal Characteristics
Units
°C/W45
Parameter Typical
W
W/
o
C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds 300
Rev.1.0: October 2014
www.aosmd.com Page 1 of 6
AOD7N65/AOI7N65
Symbol Min Typ Max Units
650
750
BV
DSS
/∆TJ 0.67 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3.3 3.9 4.5 V
R
DS(ON)
1.2 1.56 Ω
g
FS
7 S
V
SD
0.72 1 V
I
S
Maximum Body-Diode Continuous Current 7 A
I
SM
23 A
C
iss
780 982 1180 pF
C
oss
60 86 115 pF
C
rss
4 7 10 pF
R
g
1.5 3.2 5 Ω
Q
g
15 19.6 24 nC
Q
gs
4.6 nC
Q
gd
8.2 nC
t
D(on)
26 ns
t
r
43 ns
t
D(off)
53
ns
Static Drain-Source On-Resistance V
GS
=10V, I
D
=3.5A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=325V, I
D
=7A,
R
G
=25Ω
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
BV
DSS
µA
V
Breakdown Voltage Temperature
Coefficient I
D
=250µA, V
GS
=0V
V
DS
=0V, V
GS
=±30V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
I
DSS
Zero Gate Voltage Drain Current V
DS
=650V, V
GS
=0V
Gate Drain Charge
V
DS
=5V,
I
D
=250µA
V
DS
=520V, T
J
=125°C
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=3.5A
Forward Transconductance
DYNAMIC PARAMETERS
Diode Forward Voltage
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=520V, I
D
=7A
Gate Source Charge
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
t
D(off)
53
ns
t
f
32 ns
t
rr
290 365 440 ns
Q
rr
3.4 4.3 5.4 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=7A,dI/dt=100A/µs,V
DS
=100V
Turn-Off DelayTime
G
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=7A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.1A, VDD=150V, RG=10Ω, Starting TJ=25°C
Rev.1.0: October 2014 www.aosmd.com Page 2 of 6
AOD7N65/AOI7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
12
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5V
6V
10V
6.5V
5.5V
0.1
1
10
100
2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
C
V
DS
=40V
25
°
C
125
°
C
0.6
0.9
1.2
1.5
1.8
2.1
2.4
0 3 6 9 12 15
RDS(ON) (Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
I
D
=3.5A
40
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0 0.2 0.4 0.6 0.8 1
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
ID=30A
25
°
125
°
Voltage
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ(oC)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0: October 2014 www.aosmd.com Page 3 of 6
AOD7N65/AOI7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 5 10 15 20 25 30
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=520V
ID=3.5A
1
10
100
1000
10000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
0
200
400
600
800
1000
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
TJ(Max)=150°C
TC=25°C
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Case (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse T
on
T
P
D
Rev.1.0: October 2014 www.aosmd.com Page 4 of 6
AOD7N65/AOI7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
40
80
120
160
200
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note B)
0
2
4
6
8
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note B)
0
100
200
300
400
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
TJ(Max)=150°C
TA=25°C
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse T
on
T
P
D
Rev.1.0: October 2014 www.aosmd.com Page 5 of 6
AOD7N65/AOI7N65
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
+
VDC
L
Vgs
Vds
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
VDC
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Tes t Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.1.0: October 2014 www.aosmd.com Page 6 of 6