2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) VGS1 - VGS2 Max (mV) 2N5196 -0.7 to -4 -50 1 -15 5 2N5197 -0.7 to -4 -50 1 -15 5 2N5198 -0.7 to -4 -50 1 -15 10 2N5199 -0.7 to -4 -50 1 -15 15 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet). For similar products see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-71 S1 G2 1 D1 6 2 D2 5 3 4 G1 S2 Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 70252 S-04031--Rev. D, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C www.vishay.com 8-1 2N5196/5197/5198/5199 Vishay Siliconix SPECIFICATIONS FOR 2N5196 AND 2N5197 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5196 Parameter 2N5197 Symbol Test Conditions Typa V(BR)GSS IG = -1 mA, VDS = 0 V -57 -50 VGS(off) VDS = 20 V, ID = 1 nA -2 -0.7 VDS = 20 V, VGS = 0 V 3 0.7 7 mA VGS = -30 V, VDS = 0 V -10 -25 -25 pA -20 -50 -50 nA -5 -15 -15 pA -0.8 -15 -15 nA Min Max Min -4 -0.7 7 0.7 Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Gate-Source Voltage IDSS IGSS IG VGS TA = 150_C VDG = 20 V, ID = 200 mA TA = 125_C VDG = 20 V, ID = 200 mA -50 -4 V -1.5 -0.2 -3.8 -0.2 -3.8 V 2.5 1 4 1 4 mS 50 mS 1.6 mS mS Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 20 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 20 V, VGS = 0 V f = 1 kHz VDS = 20 V, ID = 200 mA f = 1 kHz 2 0.8 50 0.7 1.6 0.7 1 4 4 3 6 6 1 2 2 9 20 20 nV Hz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW 0.5 0.5 dB VDS = 20 V, VGS = 0 V f = 1 MHz pF Matching Differential Gate-Source Voltage |V GS1-V GS2| VDG = 20 V, ID = 200 mA 5 5 mV Gate-Source Voltage Differential Change with Temperature D|V GS1-V GS2| VDG = 20 V, ID = 200 mA TA = -55 to 125_C 5 10 mV/_C Saturation Drain Current Ratio Transconductance Ratio DT I DSS1 I DSS2 gfs1 gfs2 Differential Output Conductance |g os1-g os2| Differential Gate Current |I G1-I G2| Common Mode Rejection Ratioc www.vishay.com 8-2 CMRR VDS = 20 V, VGS = 0 V 0.98 0.95 1 0.95 1 0.99 0.97 1 0.97 1 VDS = 20 V, ID = 200 mA f = 1 kHz 0.1 1 1 mS VDG = 20 V, ID = 200 mA , TA = 125_C 0.1 5 5 nA VDG = 10 to 20 V, ID = 200 mA 100 dB Document Number: 70252 S-04031--Rev. D, 04-Jun-01 2N5196/5197/5198/5199 Vishay Siliconix SPECIFICATIONS FOR 2N5198 AND 2N5199 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5198 Parameter 2N5199 Symbol Test Conditions Typa V(BR)GSS IG = -1 mA, VDS = 0 V -57 -50 VGS(off) VDS = 20 V, ID = 1 nA -2 -0.7 VDS = 20 V, VGS = 0 V 3 0.7 7 mA VGS = -30 V, VDS = 0 V -10 -25 -25 pA -20 -50 -50 nA -5 -15 -15 pA -0.8 -15 -15 nA Min Max Min -4 -0.7 7 0.7 Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Gate-Source Voltage IDSS IGSS IG VGS TA = 150_C VDG = 20 V, ID = 200 mA TA =125_C VDG = 20 V, ID = 200 mA -50 -4 V -1.5 -0.2 -3.8 -0.2 -3.8 V 2.5 1 4 1 4 mS 50 mS 1.6 mS mS Dynamic Common-Source Forward Transconductance gfs VDS = 20 V, VGS = 0 V, f = 1 kHz Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss 2 VDS = 20 V, ID = 200 mA f = 1 kHz VDS = 20 V, VGS = 0 V, f = 1 MHz 0.8 50 0.7 1.6 0.7 1 4 4 3 6 6 1 2 2 9 20 20 nV Hz pF Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 20 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW 0.5 0.5 dB Matching Differential Gate-Source Voltage |V GS1-V GS2| VDG = 20 V, ID = 200 mA 10 15 mV Gate-Source Voltage Differential Change with Temperature D|V GS1-V GS2| VDG = 20 V, ID = 200 mA TA = -55 to 125_C 20 40 mV/_C Saturation Drain Current Ratio Transconductance Ratio DT I DSS1 I DSS2 gfs1 gfs2 Differential Output Conductance |g os1-g os2| Differential Gate Current |I G1-I G2| Common Mode Rejection Ratioc CMRR VDS = 20 V, VGS = 0 V 0.95 1 0.95 1 0.97 0.95 1 0.95 1 VDS = 20 V, ID = 200 mA f = 1 kHz 0.2 1 1 mS VDG = 20 V, ID = 200 mA , TA = 125_C 0.1 5 5 nA VDG = 10 to 20 V, ID = 200 mA 97 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. Document Number: 70252 S-04031--Rev. D, 04-Jun-01 0.97 dB NQP www.vishay.com 8-3 2N5196/5197/5198/5199 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 3 2.6 IDSS gfs 3 2.2 2 1.8 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 1 1.4 0 IG @ ID = 200 mA 10 nA TA = 125_C IG - Gate Leakage 4 100 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 5 -1 -2 -3 -4 IGSS @ 125_C 100 pA 50 mA 50 mA 200 mA 10 pA IGSS @ 25_C TA = 25_C 1 pA 1 0 1 nA 0.1 pA -5 0 10 VGS(off) - Gate-Source Cutoff Voltage (V) 20 30 40 VDG - Drain-Gate Voltage (V) Output Characteristics Output Characteristics 5 5 VGS(off) = -3 V VGS = 0 V VGS(off) = -2 V -0.3 V 4 VGS = 0 V 3 -0.2 V -0.4 V 2 -0.6 V -0.8 V 1 ID - Drain Current (mA) ID - Drain Current (mA) 4 -0.6 V 3 -0.9 V -1.2 V 2 -1.5 V -1.8 V 1 -1.0 V -2.1 V -1.2 V 0 0 -1.4 V 0 4 8 12 16 20 0 VDS - Drain-Source Voltage (V) 4 8 -2.4 V 16 12 20 VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics 2 2.5 VGS(off) = -2 V VGS = 0 V VGS(off) = -3 V -0.2 V -0.4 V 1.2 -0.6 V -0.8 V 0.8 -1.0 V -1.2 V 0.4 2.0 ID - Drain Current (mA) VGS = 0 V 1.6 ID - Drain Current (mA) 50 -0.3 V -0.6 V -0.9 V 1.5 -1.2 V -1.5 V 1.0 -1.8 V 0.5 -2.1 V -1.4 V 0 0 0.2 0.4 0.6 VDS - Drain-Source Voltage (V) www.vishay.com 8-4 -1.6 V 0.8 -2.4 V 0 1 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) Document Number: 70252 S-04031--Rev. D, 04-Jun-01 2N5196/5197/5198/5199 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current Transfer Characteristics 5 100 VGS(off) = -2 V VDG = 20 V TA = 25_C VDS = 20 V (mV) TA = -55_C 3 VGS1 - VGS2 ID - Drain Current (mA) 4 25_C 2 2N5199 10 2N5196 125_C 1 0 1 0 -0.5 -1.0 -1.5 -2.0 VGS - Gate-Source Voltage (V) -2.5 0.01 Voltage Differential with Temperature vs. Drain Current 130 ( m V/ _C ) VDG = 20 V DTA = 25 to 125_C DTA = -55 to 25_C CMRR = 20 log 120 CMRR (dB) 2N5199 Dt 10 2N5196 DVDG D V GS1 - VGS2 110 DVDG = 10 - 20 V 100 5 - 10 V D VGS1 - VGS2 1 Common Mode Rejection Ratio vs. Drain Current 100 90 80 1 0.01 0.1 ID - Drain Current (mA) 1 0.01 Circuit Voltage Gain vs. Drain Current rDS(on) - Drain-Source On-Resistance ( ) 80 60 VGS(off) = -3 V VGS(off) = -2 V 40 AV + 20 g fs R L 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 10 V RL + ID 0 0.01 Document Number: 70252 S-04031--Rev. D, 04-Jun-01 0.1 ID - Drain Current (mA) 1 On-Resistance vs. Drain Current 100 AV - Voltage Gain 0.1 ID - Drain Current (mA) 1k 800 600 VGS(off) = -2 V 400 VGS(off) = -3 V 200 0 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1 www.vishay.com 8-5 2N5196/5197/5198/5199 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 C rss - Reverse Feedback Capacitance (pF) C iss - Input Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 4 5V 15 V 2 20 V f = 1 MHz 4 VDS = 0 V 3 5V 2 15 V 1 20 V 0 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) 0 -20 -4 2.5 VGS(off) = -2 V gos - Output Conductance (S) VDS = 20 V en - Noise Voltage nV / Hz 16 ID @ 200 mA 12 8 VGS = 0 V 4 0 10 100 1k f - Frequency (Hz) 10 k TA = -55_C 1.5 1.0 25_C 0.5 125_C 0 0.01 100 k VDS = 20 V f = 1 kHz 2.0 Common-Source Forward Transconductance vs. Drain Current 0.1 ID - Drain Current (mA) 1 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 1k VGS(off) = -2 V VDS = 20 V f = 1 kHz 2.0 TA = -55_C 1.5 25_C 1.0 0.5 125_C gos 800 8 6 600 400 4 rDS 200 2 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0 0 0.01 www.vishay.com 0.1 ID - Drain Current (mA) 1 g os - Output Conductance ( mS) rDS(on) - Drain-Source On-Resistance ( ) 2.5 gfs - Forward Transconductance (mS) -20 Output Conductance vs. Drain Current Equivalent Input Noise Voltage vs. Frequency 20 8-6 -8 -12 -16 VGS - Gate-Source Voltage (V) 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) Document Number: 70252 S-04031--Rev. D, 04-Jun-01