2MBI300VX-170-50 IGBT Modules Power Module (V series) 1700V / 300A / 2-in-1 package Features Low VCE(sat) Low Inductance Module structure Solderless press-fit terminals Applications Inverter for Motor Drives, AC and DC Servo Drives Uninterruptible Power Supply Systems, Wind Turbines, PV Power Conditioning Systems Outline drawing ( Unit : mm ) Weight: 350g (typ.) Equivalent Circuit [ Inverter ] C P [ Thermistor ] T1 T2 G1 E1 OUT G2 E2 N 1 FM5F8404 2014/11 2MBI300VX-170-50 IGBT Modules Absolute Maximum Ratings (at TC= 25C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES IC Collector current Conditions IC pulse -IC -IC pulse PC Tj Continuous 1ms TC=25oC TC=100oC Maximum Ratings 1700 20 450 300 600 300 600 1665 175 Units V V A 1ms Collector power dissipation 1 device W Junction temperature Operating junction temperature Tjop 150 o (under switching conditions) C Tc Case temperature 125 Tstg Storage temperature -40 ~ 125 Isolation between terminal and copper base (*1) Viso AC: 1min. 3400 VAC between thermistor and others (*2) voltage 3.5 Mounting (*3) Screw Nm Torque 4.5 Terminals (*4) (*1) All terminals should be connected together during the test. (*2) Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. (*3) Recommendable Value : 2.5-3.5 Nm (M5) (*4) Recommendable Value : 3.5-4.5 Nm (M6) 2 FM5F8404 2014/11 2MBI300VX-170-50 IGBT Modules Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Characteristics min. typ. max. Conditions ICES VGE=0V, VCE=1700V - - 3.0 mA IGES VCE=0V, VGE=20V - - 600 nA 6.0 6.5 7.0 V Tj=25 C - 2.45 2.90 o Tj=125 C - 2.90 - Tj=150oC - 2.95 - Tj=25 C - 2.00 2.45 Tj=125oC - 2.45 - Tj=150oC Tj=25oC - 2.50 2.5 30 900 400 100 1300 100 2.25 2.70 Tj=125oC - 2.55 - VGE = 0V Tj=150oC - 2.55 - IF= 300A Tj=25oC - 1.80 2.25 Tj=125oC - 2.10 - Tj=150oC 465 3305 2.10 250 5000 495 3375 520 3450 VGE(th) VCE=20V, IC=300mA o VCE(sat) (terminal) Collector-Emitter saturation voltage VCE(sat) (chip) Internal gate resistance Input capacitance Turn-on time Turn-off time Units RG(int) Cies ton tr tr(i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time trr Thermistor Resistance R Thermistor B value B VGE = 15V IC=300A o VCE=10V, VGE=0V, f=1MHz VCC= 900V VGE= 15V Ls= 80nH IC= 300A RG= 4.7 IF=300A T=25oC T=100oC T=25/50oC V nF nsec V nsec K 5. Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*1) Rth(c-f) Conditions Characteristics min. typ. max. IGBT FWD - - 0.09 0.15 with thermal compound - 0.0167 - Units o C/W (*1) This is the value which is defined mounting on the additional cooling fin with thermal compound. 3 FM5F8404 2014/11 2MBI300VX-170-50 IGBT Modules Collector current vs. Collector-Emitter voltage Tj = 25oC / chip Collector current vs. Collector-Emitter voltage (typ.) Tj = 150oC / chip 800 800 VGE=20V 15V 12V VGE= 20V 12V Collector current: IC [A] Collector current: IC [A] 15V 600 600 400 400 10V 10V 200 200 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage: VCE [V] 2 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage Tj = 25oC / chip 10 Tj=25oC 125oC Collector-Emitter Voltage: VCE [V] 800 150oC 600 400 200 0 8 6 4 IC=600A IC=300A IC=150A 2 0 1 2 3 4 5 5 10 Collector-Emitter Voltage: VCE [V] 15 20 Gate-Emitter Voltage: VGE [V] Dynamic Gate Charge (typ.) Vcc=900V, Ic=300A, Tj= 25C Capacitance vs. Collector-Emitter Voltage VGE= 0V, f= 1MHz, Tj= 25oC 1000 20 Gate-Emitter voltage: VGE [V] 15 100 Cies 10 Cres 1 Coes 10 20 30 Collector-Emitter voltage: VCE [V] 1000 VCE 750 10 500 5 250 0 0 -5 -250 -10 -500 VGE -15 -20 -4000 0.1 0 25 -750 -2000 0 2000 Gate charge: QG [nC] 4 Collector-Emitter voltage: VCE [V] 0 Gate Capacitance: Cies, Coes, Cres [nF] 3 Collector-Emitter voltage: VCE [V] Collector current vs. Collector-Emitter voltage VGE = 15V / chip Collector Current: IC [A] 1 -1000 4000 FM5F8404 2014/11 2MBI300VX-170-50 IGBT Modules Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=4.7, Tj=25C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=4.7, Tj=125C, 150C toff 1000 Tj=125oC Tj=150oC toff 1000 tr ton tf 100 ton tr 100 10 tf 10 0 200 400 600 800 0 200 Collector current: IC [A] 800 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=4.7, Tj=125C, 150C 10000 250 Tj=125oC Tj=150oC toff 1000 ton tr 100 tf 10 1 Tj=125oC Tj=150oC Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] 600 Collector current: IC [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=15V, Tj=125C, 150C 10 200 Eon Eoff 150 Err 100 50 0 100 0 200 Gate resistance: RG [] 400 600 800 Collector current: IC [A] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=15V, Tj=125C, 150C Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, Rg=4.7, Tj=150C 400 800 Tj=125oC Tj=150oC Eon Collector current: IC [A] Switching loss: Eon, Eoff, Err [mJ/pulse] 400 300 600 Notice) Switching characteristics of VCE is defined between Sense C and Sense E1 for Upper arm and Sense E1 and Sense E2 for Lower arm. 400 200 Eoff 200 100 Err 0 0 1 10 0 100 500 1000 1500 2000 Collector-Emitter voltage: VCE [V] Gate resistance: RG [] 5 FM5F8404 2014/11 2MBI300VX-170-50 IGBT Modules Reverse recovery characteristics (typ.) Vcc=900V, VGE=15V, Rg=4.7, Tj=25C Forward current vs. Forward vltage (typ.) chip 10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 800 Forward current: IF [A] Tj=25oC 600 400 200 150oC 125oC 1000 Irr trr 100 10 0 0 1 2 3 0 4 200 600 800 Forward current: If [A] Forward on voltage: VF [V] Reverse Recovery Characteristics (typ.) Vcc=900V, VGE=15V, Rg=4.7, Tj=25,150 Transient Thermal Resistance (max.) 1000 1 Thermal resistance: Rth(j-c) [oC/W] *** Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 400 Irr trr 100 Tj=125oC Tj=150oC 10 0 200 400 600 FWD 0.1 IGBT 0.01 Rth [C/W] 0.001 0.001 800 Forward current: If [A] [sec] IGBT FWD 0.0023 0.0301 0.0598 0.0708 0.00965 0.02448 0.03458 0.02130 0.01609 0.04079 0.05763 0.03549 0.01 0.1 1 Pulse Width : PW [sec] [THERMISTOR] Temperature characteristic (typ.) FWD safe operating area (max.) Tj=150C 700 100 Reverse recovery current: Irr [A] Resistance : R [k] 600 10 1 0.1 -60 -40 -20 0 20 40 60 500 Pmax=375kW 400 300 Notice) Switching characteristics of VCE is defined between Sense C and Sense E1 for Upper arm and Sense E1 and Sense E2 for Lower arm. 200 100 0 0 80 100 120 140 160 Temperature [oC] 6 500 1000 1500 Collector-Emitter voltage: VCE [V] 2000 FM5F8404 2014/11 2MBI300VX-170-50 IGBT Modules Warnings 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of 11/2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright (c)1996-2014 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7 FM5F8404 2014/11