April 1995 FAIRGHILD ere SEMICONDUCTOR m BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor OZLSAEWW/0ZLSE General Description Features These N-Channel enhancement mode field effect = High density cell design for low Rosin. transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide Rugged and reliable. rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. High saturation current capability. we TO-92 (97 s (97) SOT-23 Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol | Parameter BS170 MMBF170 Units Voss Drain-Source Voltage 60 Vv Voor Drain-Gate Voltage (R,, < 1MQ) 60 Vv Voss Gate-Source Voltage +20 Vv , Drain Current - Continuous 500 500 mA - Pulsed 1200 800 P, Maximum Power Dissipation 830 300 mW Derate Above 25C 6.6 24 mW/C Ty Tore Operating and Storage Temperature Range -55 to 150 c L Maximum Lead Temperature for Soldering 300 cc Purposes, 1/16" from Case for 10 Seconds THERMAL CHARACTERISTICS Ruin Thermal Resistacne, Junction-to-Ambient 150 417 CIW 5-101 BS170 Rev. C / MMBF170 Rev. DBS170/MMBF170 Electrical Characteristics (1, = 25C unless otherwise noted) Symbol _ | Parameter Conditions Type | Min | Typ | Max | units OFF CHARACTERISTICS BV nes Drain-Source Breakdown Voltage Veg = OV, I= 100 LA All 60 Vv loss Zero Gate Voltage Drain Current Vos = 25 V, Veg= OV All 0.5 lesse Gate - Body Leakage, Forward Veg = 18 V, Vog = OV All 10 nA ON CHARACTERISTICS (ote 1) Vesey Gate Threshold Voltage Vog = Veg: |p = 1 mA All 08 2.1 3 V Rosiory Static Drain-Source On-Resistance Vos = 10 V, |, = 200 mA All 1.2 5 Os Forward Transconductance Vog = 10V, |, = 200 mA 8S170 320 mS Vos 2. 2 Vesin 'p = 200 mA MMBF 170 320 DYNAMIC CHARACTERISTICS C. Input Capacitance Vog =10V, Veg = OV, All 24 40 pF Cun Output Capacitance f = 1.0 MHz All 7 | 30 | pe C... Reverse Transfer Capacitance All 7 10 pF SWITCHING CHARACTERISTICS (note 1) th Tum-On Time Vop = 25 V, |p =200 mA, BS170 10 ns Vos = 10 V, Rog = 252 Vop = 25 V, |, =500 mA, MMBF 170 10 Veg = 10 V, Reg, = 50 Q tor Tum-Off Time Vop = 25 V, I, = 200 mA, BS170 10 ns Veg = 10 V, Regy = 25 Q Vop = 25 V, |, =500 mA, MMBF170 10 Vos = 10 V, Reg, = 90 2 Note: 1. Pulse Test: Pulse Width < 300ps, Duly Cycle < 2.0%. 5-102 BS170 Rev. C / MMBF170 Rev.DTypical Electrical Characteristics = a |p DRAIN-SOURCE CURRENT (A) a 0 1 2 3 4 Vg DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. N a BS170 / MMBF170 Rogion) NORMALIZED DRAIN-SOURCE ON-RESISTANCE O4 038 1.2 |p. DRAIN CURRENT (A) 1.6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. wi Ww 2 g of a x H#2 15 N 2 z za = & =o 5S 1.25 Bz zu Zw && ge o5 1 F232 23 2g xs % < <= 0.75 5 & 0.5 50-25 Q 25 50 75 100 125 150 0 04 08 12 16 2 J, . JUNCTION TEMPERATURE (C} 1p. DRAIN CURRENT (A) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain withTemperature . Currentand Temperature. 2 T | T= -55C Y Vos = 10V | 25C . w te i f 125C Q z YZ 8 = a 5 uw oO aq 1.2 7 5 8 & Vj 36 z YY ge Z 08 LL ZF < gw 5 > & oO wn : Sf < oO 85 2 4 6 a 10 50 +26 G 26 50 75 100 125 150 Vog: GATE TO SOURCE VOLTAGE {V) Figure 5. Transfer Characteristics. T, JUNCTION TEMPERATURE (C) Figure 6. Gate Threshold Variation with Temperature. BS170 Rev. C {MMBF170 Rev. D 5-103 OZLLAEWW/OZLLSEBS170/MMBF170 Typical Electrical Characteristics (continued) BS170 / MMBF170 BV pss NORMALIZED ODRAIN-SOURCE BREAKDOWN VOLTAGE +25 0 25 50 75 100 125 T, , JUNCTION TEMPERATURE ('C) Figure 7. Breakdown Voltage Variation with Temperature . 150 a g = QO & 1 2 3 5 10 20 30 50 Vpg DRAIN TO SOURCE VOLTAGE (Vv) Figure 9. Capacitance Characteristics. Vop Oo > VIN Ry \ pe < Vout /- Ves fa Roen DUT ( 1, OAH CS / Figure 11. Switching Test Circuit. S ao 2 0.05 0.01 0.008 == \, , REVERSE DRAIN CURRENT (A} 0.001 0.2 0.4 0.6 08 1 1.2 1.4 Vsp . BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. a a o Vag . GATE-SOURCE VOLTAGE (V) nN 0 0.4 0.8 4.2 1.6 2 9 GATE CHARGE (nC) Figure 10. Gate Charge Characteristics . taton) Output, Vout + 90% Inverted Input, Vin 10% ~<-Pulse Width Figure 12. Switching Waveforms. 5-104 BS170 Rev. C / MMBF170 Rev. DTypical Electrical Characteristics (continued) oD woh ~ 3 3 S 2 2 = < Os = 0.5 g : w gE Z 7 3 0.4 3 0.1 = : : 3 & 0.05 z os [o> Veg = 10 5 3 ___ SINGLE PULSE 2 Ves = 10 T, = 25C SINGLE PULSE 0.04 0.01 Ta = 25'C 0.005 4 2 5 10 20 30 60 80 Vps . DRAIN-SOURCE VOLTAGE (V) Figure 13. 8S170 Maximum Safe Operating Area. 05 0.2 01 0.05 F(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.005 1 2 5 10 20 30 60 80 Vg . DRAIN-SOURTE VOLTAGE (Vv) Figure 14. MMBF170 Maximum Safe Operating Area. Resa =r) Rasa Roa = (See Datasheet) a te y <_- typ Ty Ta =P * Raja Single Pul 0.02 " 2 Pulse Duty Cycle, D = t, My 0.01 0.0001 0.001 0.04 0.1 1 10 100 300 t,, TIME (sec) Figure 15. 05 02 0.1 0.05 0.02 0.01 9.01 Single r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TQ-92,BS170 Transient Thermal Response Curve. nwa =H) * Resa Roa = (See Datasheet) qu she So Ty-Ty =P? Resa (t) 0.002 Duty Cycie, D=t, ft, 0.001 _L 0.0001 0.001 0.01 0.1 1 10 100 300 t,, TIME (sec) Figure 16. SOT-23,MMBF170 Transient Thermal Response Curve. BS170 Rev. C / MMBF170 Rev. D 5-105