DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 Phototransistor Optocoupler FEATURES * Current Transfer Ratio at IF=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. * High Collector-Emitter Voltage ILD/Q1: BVCEO=50 V ILD/Q2, ILD/Q5: BVCEO=70 V * Field-Effect Stable by TRansparent IOn Shield (TRIOS) Isolation Test Voltage, 5300 VRMS * Underwriters Lab File #E52744 V * VDE 0884 Available with Option 1 D E Maximum Ratings (Each Channel) Emitter Reverse Voltage .............................................. 6.0 V Forward Current ............................................60 mA Surge Current .................................................. 2.5 A Power Dissipation........................................ 100 mW Derate Linearly from 25C ...................... 1.3 mW/C Detector Collector-Emitter Reverse Voltage ILD/Q1 ............................................................ 50 V ILD/Q2, ILD/Q5................................................ 70 V Collector Current ............................................50 mA Collector Current (t<1.0 ms).........................400 mA Power Dissipation........................................ 200 mW Derate Linearly from 25C ....................... 2.6 mW/C Package Isolation Test Voltage (between emitter and detector referred to standard climate 23C/50%RH, DIN 50014)........................................... 5300 VRMS Creepage .................................................. 7.0 mm Clearance .................................................. 7.0 mm Isolation Resistance VIO=500 V, TA=25C........................... RIO=1012 VIO=500 V, TA=100C......................... RIO=1011 Package Power Dissipation......................... 250 mW Derate Linearly from 25C ...................... 3.3 mW/C Storage Temperature.................... -40C to +150C Operating Temperature ................. -40C to +100C Junction Temperature..................................... 100C Soldering Temperature (2.0 mm from case bottom) ........................ 260C Dimensions in inches (mm) Dual Channel pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) Anode 1 8 Emitter Cathode 2 7 Collector Cathode 3 6 Collector Anode 4 5 Emitter .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .100 (2.54) typ. .018 (.46) .022 (.56) 3-9 .008 (.20) .012 (.30) Quad Channel Anode 1 pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) 10 .050 (1.27) 11 12 13 14 15 16 .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 15 Collector Cathode 3 14 Collector Anode 4 13 Emitter Anode 5 12 Emitter Cathode 6 11 Collector Cathode 10 Collector 7 Anode 8 .018 (.46) .022 (.56) .020(.51) .035 (.89) .100 (2.54)typ. 9 Emitter .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4 16 Emitter Cathode 2 .050 (1.27) 10 typ. 3-9 .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) DESCRIPTION The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD/Q1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CRT modulation. The ILD1/2/5 has two isolated channels in a single DIP package and the ILQ1/2/5 has four isolated channels per package. See Appnote 45, "How to Use Optocoupler Normalized Curves". 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-173 March 17, 2000-13 Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF -- 1.25 1.65 V IF=60 mA Reverse Current IR -- 0.01 10 A VR=6.0 V Capacitance C0 -- 25 -- pF VR=0 V, f=1.0 MHz Thermal Resistance, Junction to Lead RTHJL -- 750 -- K/W -- Capacitance CCE -- 6.8 -- pF VCE=5.0 V, f=1.0 MHz Leakage Current, Collector-Emitter ICEO -- 5.0 50 nA VCE=10 V Saturation Voltage, Collector-Emitter VCESAT -- 0.25 0.4 -- ICE=1.0 mA, IB=20 A DC Forward Current Gain HFE 200 650 1800 -- VCE= 10 V, IB=20 A Saturated DC Forward Current Gain HFESAT 120 400 600 -- VCE= 0.4 V, IB=20 A Thermal Resistance, Junction to Lead RTHJL -- 500 -- K/W -- Emitter Detector Package Transfer Characteristics (Each Channel) Parameter Symbol Min. Typ. Max. Unit Condition Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT -- 75 -- % IF=10 mA, VCE=0.4 V Current Transfer Ratio (Collector-Emitter) CTRCE 20 80 300 % IF=10 mA, VCE=10 V Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT -- 170 -- % IF=10 mA, VCE=0.4 V Current Transfer Ratio (Collector-Emitter) CTRCE 100 200 500 % IF=10 mA, VCE=10 V Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT -- 100 -- % IF=10 mA, VCE=0.4 V Current Transfer Ratio (Collector-Emitter) CTRCE 50 130 400 % IF=10 mA, VCE =10 V Common Mode Rejection, Output High CMH -- 5000 -- V/s VCM=50 VP-P, RL=1.0 k, IF=0 mA Common Mode Rejection, Output Low CML -- 5000 -- V/s VCM=50 VP-P, RL=1.0 k, IF=10 mA Common Mode Coupling Capacitance CCM -- 0.01 -- pF -- Package Capacitance CIO -- 0.8 -- pF VIO=0 V, f=1.0 MHz ILD/Q1 ILD/Q2 ILD/Q5 Isolation and Insulation 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) ILD/Q1/2/5 2-174 March 17, 2000-13 Typical Switching Times Non-saturated Figure 1. Non-saturated switching timing VCC=5 V IF=10 mA VO F=10 KHz, DF=50% RL=75 Figure 2. Non-saturated switching timing IF Characteristic ILD/Q1 IF=20 mA ILD/Q2 IF=5.0 mA ILD/Q5 IF=10 mA Unit Delay, tD 0.8 1.7 1.7 s Rise time, tr 1.9 2.6 2.6 s Storage, tS 0.2 0.4 0.4 s Fall Time, tf 1.4 2.2 2.2 s Propagation H-L, tPHL 0.7 1.2 1.1 s Propagation L-H, tPLH 1.4 2.3 2.5 s Characteristic ILD/Q1 IF=20 mA ILD/Q2 ILD/Q5 IF=5.0 mA IF=10 mA Unit Delay, tD 0.8 1.0 1.7 s Rise time, tr 1.2 2.0 7.0 s Storage, tS 7.4 5.4 4.6 s Fall Time, tf 7.6 13.5 20 s Propagation H-L, tPHL 1.6 5.4 2.6 s Propagation L-H, tPLH 8.6 7.4 7.2 s Condition VCE=5.0 V RL=75 50% of VPP Saturated tPHL V0 tPLH tS 50% tD tF tR Condition VCE=0.4 V RL=1.0 k VCC=5.0 V VTH=1.5 V Figure 3. Saturated switching timing F=10 KHz, DF=50% Figure 5. Normalized non-saturated and saturated CTR at TA=25C versus LED current VCC=5 V 1.4 IF=10 mA VF - Forward Voltage - V RL VO Figure 4. Saturated switching timing 1.3 TA = -55C 1.2 TA = 25C 1.1 1.0 0.9 TA = 100C 0.8 0.7 IF .1 1 10 IF - Forward Current - mA 100 VO tD tR tPLH VTH=1.5 V tPHL tS tF CTRNF - Normalized CTR Factor Figure 6. Normalized non-saturated and saturated CTR at TA=25C versus LED current 1.5 Normalized to: VCE = 10 V, IF = 10 mA TA = 25C CTRce(sat) VCE = 0.4 V 1.0 NCTR 0.5 NCTR(SAT) 0.0 .1 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 1 10 IF - LED Current - mA 100 ILD/Q1/2/5 2-175 March 17, 2000-13 35 1.0 TA = 50C Ice - Collector Current - mA Normalized to: VCE = 10 V, IF = 10 mA TA = 25C CTRce(sat) VCE = 0.4 V NCTR 0.5 NCTR(SAT) 0.0 .1 1 10 IF - LED Current - mA Normalized to: VCE = 10 V, IF = 10 mA TA = 25C CTRce(sat) VCE = 0.4 V NCTR 0.5 NCTR(SAT) 0.0 .1 1 10 IF - LED Current - mA NCTR - Normalized CTR 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25C CTRce(sat) VCE = 0.4 V 1.0 TA = 85C NCTR 0.5 NCTR(SAT) 0.0 .1 1 10 IF - LED Current - mA 15 100 70C 25C 85C 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 Figure 11. Collector-emitter leakage current versus temperature 100 Figure 9. Normalized non-saturated and saturated CTR at TA=85C versus LED current 50C 20 ICEO - Collector-Emitter - nA CTR - Normalized CTR Factor 1.5 TA = 70C 25 100 Figure 8. Normalized non-saturated and saturated CTR at TA=70C versus LED current 1.0 30 105 104 103 102 VCE = 10 V 101 Typical 100 10-1 10-2 -20 0 20 40 60 80 TA - Ambient Temperature - C 100 Figure 12. Propagation delay versus collector load resistor 1000 2.5 TA = 25C, IF = 10 mA VCC = 5 V, Vth = 1.5 V tpLH 100 2.0 10 1.5 tpHL 1 .1 1 10 1.0 100 tpHL - Propagation High-Low - s 1.5 Figure 10. Collector-emitter current versus temperature and LED current tpLH - Propagation Low-High - s CTRNF - Normalized CTR Factor Figure 7. Normalized non-saturated and saturated CTR at TA=50C versus LED current RL - Collector Load Resistor - K 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) ILD/Q1/2/5 2-176 March 17, 2000-13