HIGH SPEED SWITCHING DIODE SOD-80 CASE MAXIMUM RATINGS (T,=25C) SYMBOL Continuous Reverse Voltage VR Peak Repetitive Reverse Voltage VRRM Continuous Forward Current IF Peak Repetitive Forward Current IFRM Forward Surge Current, tp=1 psec. leSmM Forward Surge Current, tp=1 sec. lFSM Power Dissipation Pp Operating and Storage Junction Temperature TJ: T stg Thermal Resistance OJA DESCRIPTION: 756 100 250 250 4000 1000 500 -65 to +200 350 ELECTRICAL CHARACTERISTICS (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN VBR IR=5.0NA 75 VBR IR=100nA 100 IR VR=20V VE IF=5.0MA 0.62 Ve IF=100MA Cr Vp=0, f=1 MHz ter IR=lF=10mA, RL =100Q, Rec. to 1.0mA 142 Central CLL4448 Semiconductor Corp. MAX 25 0.72 1.0 4.0 4.0 The CENTRAL SEMICONDUCTOR CLL4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, ina hermetically sealed glass surface & mount package, designed for high speed switching applications. Marking Code: Cathode Band. UNITS mA mA mA mA mw C oC UNITSAli dimensions in inches (mm). .130(3.30) .146(3.71) .016(0.41) ; .051(1.30) @~067(1.70) | 0040.10) MAXIMUM R2 143