BSC010NE2LSI - Infineon Technologies

Industrial & Multimarket

Data Sheet

2.1, 2011-09-08

Final

OptiMOS™

BSC010NE2LSI

n-Channel Power MOSFET

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Final Data Sheet 1 2.1, 2011-09-08

1 Description

OptiMOS™25V products are class leading power MOSFETs for highest power

density and energy efficient solutions. Ultra low ga te and output charges together

with lowest on state resistance in small footprint packages make OptiMOS™ 25V

the best choice for the demanding requirements of voltage regulator solutions in

Servers, Datacom and Telecom applications. Super fast switching Control FETs

together with low EMI Sync FETs provide solutions that are easy to design in.

OptiMOS™ products are available in high performance packages to tackle your

most challenging applications giving full flexibility in optimizing space, efficiency

and cost. OptiMOS™ products are designed to meet and exceed the energy

efficiency and power density requirements of the sharpened next generation

voltage regulation standards in computing applications

Features

• Optimized for high performance Buck converter

• 100% avalanche tested

• Very low on-resistance RDS(on) @ VGS=4.5 V

• Qualified according to JEDEC1) for target applications

• N-channel

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

• Monolithic integrated Schottky like diode

Applications

• On board powe r fo r ser ve r

• Power managment for high performance compu ting

• Synchronous rectification

• High power density point of load converters

1) J-STD20 and JESD22

Table 1 Key Performance Parameters

Parameter Value Unit Related Links

VDS 25 V IFX OptiMOS webpage

RDS(on),max 1.05 mΩIFX OptiMOS product brief

ID100 A IFX OptiMOS spice models

QOSS 38 nC

nC IFX Design tools

Qg.typ 59

Type Package Marking

BSC010NE2LSI PG-TDSON-8 010NE2LI

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Final Data Sheet 2 2.1, 2011-09-08

2Maximum ratings

at Tj = 25 °C, unless otherwise specified.

3 Thermal characteristics

Table 2 Maximum ratings

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current ID--100 AVGS=10 V, TC=25 °C

--100 VGS=10 V, TC=100 °C

--100 VGS=4.5 V, TC=25 °C

--100 VGS=4.5 V, TC=100 °C

--38 VGS=10 V, TA=25 °C,

RthJA=50 K/W1))

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.

Pulsed drain current2)

2) See figure 3 for more detailed information

ID,pulse --400 TC=25 °C

Avalanche current, single pulse3)

3) See figure 13 for more detailed information

IAS --50

Avalanche energy, single pulse EAS --100 mJID=50 A,RGS=25 Ω

Gate source voltage VGS -20 - 20 V

Power dissipation Ptot --96 WTC=25 °C

--2.5 TA=25 °C, RthJA=50 K/W1))

Operating and storage temperature Tj,Tstg -55 - 150 °C

IEC climatic category; DIN IEC 68-1 55 150 56 Ncm

Table 3 Thermal characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Thermal resistance, junction - case RthJC --1.3K/W

--20 top

Device on PCB RthJA --50 6 cm

2 cooling area1)

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Electrical characteristics

Final Data Sheet 3 2.1, 2011-09-08

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4 Static characteristics

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0 V, ID=1.mA

Breakdown voltage temperature

coefficien dV(BR)DSS

/dTj

-15-mV/KID=10 mA, referenced to

25°C

Gate threshold voltage VGS(th) 1.2 - 2 VDS=VGS, ID=250 µA

Zero gate voltage drain current IDSS --0.5mAVDS=20 V, VGS=0 V,

Tj=25 °C

-3- VDS=20 V, VGS=0 V,

Tj=125 °C

Gate-source leakage current IGSS - 10 100 nA VGS=20V, VDS=0 V

Drain-source on-state resistance RDS(on) -1.11.4mΩVGS=4.5 V, ID=30A,

- 0.9 1.05 VGS=10 V, ID=30 A,

Gate resistance RG-0.6-Ω

Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,

ID=30 A

Table 5 Dyn ami c ch a r acte ris tic s

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Input capacitance Ciss -4200-pFVGS=0 V, VDS=12 V,

f=1 MHz

Output capacitance Coss -1800-

Reverse transfer capacitance Crss -180-

Turn-on dela y time td(on) -6.3-nsVDD=12 V, VGS=10V,

ID=30 A, RG=1.6 Ω

Rise time tr-6.2-

Turn-off delay time td(off) -32-

Fall time tf-4.6-

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Electrical characteristics

Final Data Sheet 4 2.1, 2011-09-08

Table 6 Gate charge characteristics1)

1) See figure 16 for gate charge parameter definition

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Gate to sour ce charge Qgs -10-nCVDD=12 V,

ID=30 A,

VGS=0 to 4.5 V

Gate charge at threshold Qg(th) -6.7-

Gate to drain charge Qgd -6.9-

Switching charge Qsw -10-

Gate charge total Qg-29-

Gate plateau voltage Vplateau -2.4-V

Gate charge total Qg-59-nCVDD=12 V,

ID=30 A,

VGS=0 to 10V

Gate charge total, sync. FET Qg(sync) -25- VDS=0.1 V,

VGS=0 to 4.5 V

Output charge Qoss -38- VDD=12 V, VGS=0 V

Table 7 Reverse diode characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Diode continuous forward current Is--96ATC=25 °C

Diode pulse current IS,pulse --400

Diode forward voltage VSD -0.560.7VVGS=0 V, IF=12 A,

Tj=25 °C

Reverse reco very charge Qrr -5-nCVR=15 V, IF=Is,

diF/dt=400 A/µs

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Electrical characteristics diagrams

Final Data Sheet 5 2.1, 2011-09-08

5 Electrical characteristics diagrams

Table 8

1 Power dissipation 2 Drain current

Ptot = f(TC) ID=f(TC); parameter:VGS

Table 9

3 Safe operating area TC=25 °C 4 Max. transient thermal impedance

ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Electrical characteristics diagrams

Final Data Sheet 6 2.1, 2011-09-08

Table 10

5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance

ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS

Table 11

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Electrical characteristics diagrams

Final Data Sheet 7 2.1, 2011-09-08

Table 12

9 Drain-sour ce on-s ta te resistance 10 Typ. gate th re s hold voltage

RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS

Table 13

11 Typ. capacitances 12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Electrical characteristics diagrams

Final Data Sheet 8 2.1, 2011-09-08

Table 14

13 Avalanche characteristics 14 Typ. gate charge

IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD

Table 15

15 Typ. drain-source leakage current 16 Gate charge waveforms

IDSS=f(VDS); VGS=0 V

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Package outline

Final Data Sheet 9 2.1, 2011-09-08

6 Package outline

Figure 1 Outlines PG-TDSON-8, dimen sions in mm/inches

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Package outline

Final Data Sheet 10 2.1, 2011-09-08

Figure 2 Outlines PG-TDSON-8 tape, dimension in mm/inches

OptiMOS™ Power-MOSFET

BSC010NE2LSI

Revision History

Final Data Sheet 11 2.1, 2011-09-08

7 Revision History

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Edition 2011-09-08

Published by

Infineon Technologies AG

81726 Munich, Germany

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Revision History: 2011-09-08, 2.1

Previous Revision:

Revision Subjects (major changes since last revision)

0.3 Release of target data sheet

2.0 Release of Final Datasheet

2.1 Update schematic