Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR TRANSISTOR 2N2484
TO-18
This transistors is primarily intended for use in high performance, low level,
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ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 60 V
Collector -Base Voltage VCBO 60 V
Emitter -Base Voltage VEBO 6.0 V
Collector Current Continuous IC 50 mA
Power Dissipation @Ta=25 degC PD 360 mW
Derate Above 25 deg C 2.06 mw/deg C
Power Dissipation @Tc=25 degC PD 1.20 W
Derate Above 25 deg C 6.85 mw/deg C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) 146 deg C/W
Junction to Ambient in Free Air Rth(j-a) * 485 deg C/W
Lead Temperature TL 300 deg C
1/16" from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION Min MAX UNIT
Collector -Emitter Voltage VCEO** IC=10mA,IB=0 60 - V
Collector -Base Voltage VCBO IC=10uA.IE=0 60 - V
Emitter -Base Voltage VEBO IE=10uA, IC=-0 6.0 - V
Collector-Cut off Current ICBO VCB=45V, IE=0 - 10 nA
Ta=150 deg C
VCB=45V, IE=0 - 10 uA
Emitter-Cut off Current IEBO VEB=5V, IC=0 - 10 nA
Collector Emitter Saturation Voltage VCE(Sat) IC=1mA,IB=0.1mA - 0.35 V
Base Emitter on Voltage VBE(on) IC=0.1mA, VCE=5V 0.5 0.7 V
IS/ISO 90 02
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
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BSC
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ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N2484
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
DC Current Gain hFE IC=1uA, VCE=5V 30 -
IC=10uA, VCE=5V 100 500
Ta=55 deg C
IC=10uA, VCE=5V 20 -
IC=100uA, VCE=5V 175 -
IC=500uA, VCE=5V 200 -
IC=1mA, VCE=5V 250 -
IC=10mA,VCE=5V** - 800
Dynamic Characteristics
Transition Frequency ft VCE=5V,IC=0.05mA 15 - MHz
f=5MHz
VCE=5V,IC=0.5mA, 60 - MHz
f=30MHz
Out-put Capacitance Cobo VCB=5V, IE=0 - 6.0 pF
f=140kHz
In-put Capacitance Cibo VEB=0.5V, IC=0 - 6.0 pF
f=140kHz
Noise Figure NF VCE=5V, IC=10uA
Rs=10kohms
f=100Hz, BW'=20Hz - 10 dB
f=1kHz, BW=200Hz - 3.0 dB
f=10kHz, BW=2kHz - 2.0 dB
f=10Hz to 15.7kHz,BW=15.7KHz 3.0 dB
Small Signal Characteristics (@ f=1kHz unless otherwise specified)
Input Impedence hie IC=1mA, VCE=5V 3.5 24 kohms
-4
Voltage Feedback Ratio hre IC=1mA, VCE=5V - 800 x10
Small Signal Current Gain hfe IC=1mA, VCE=5V 150 900
Output Admittance hoe IC=1mA, VCE=5V - 40 umhos
*Rth(j-a) is measured with the device soldered into a typical printed Circuit board.
**Pulse Test: Pulse Width=300us, Duty Cycle=2%
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TO-18 Metal Can Package
Disclaimer
TO-18 1K/polybag 350 gm/1K pcs 3" x 7.5" x 7.5" 5.0K 17" x 15" x 13.5" 80.0K 34 kgs
PACKAGE
Net Weight/Qty
Details
STANDARD PACK INNER CARTON BOX
Qty
OUTER CARTON BOX
Qty Gr WtSize Size
Packing Detail
G
1
2
3
H
J
L
F
A
D
B
E
C
K
DIM MIN MAX
All diminsions in mm.
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E—0.76
F—1.27
G—2.97
H 0.91 1.17
J 0.71 1.21
K12.70 —
L45 DEG
PIN CONFIGURATION
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
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Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com
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