MOTOROLA SC {XSTRS/R FT Ab DE eae72s4 008e435 1 i 2435 D - 6367254 MOTOROLA SC (XSTRS/R F? 96D & 29-27 MAXIMUM RATINGS MD2218,A. MD2z16.AF MD2218,A,F,AF - MQ2218,A | MD2218AF Rating Symbol | MQ2219,A | MD2219AF| Unit MD22 19,A,AF Collector-Emitter Voltage VcEO 30 40 Vde MQ22 18,A Collector-Base Voltage VcBO 60 75 Vde M 22 19 A Emitter-Base Voltage VEBO 5.0 6.0 Vde Q 3 Collector Current Continuous Ic 500 mAdc MD2218,A All Die MD2219,A Equal CASE 654-07, STYLE 1 One Die Power MD2218F,AF Total Device Dissipation Pp mw MD2219,AF 1! @ Ta = 26C 9 MD2218,A, MD2219,A 575 625 CASE 610A-04, STYLE 1 MD2218F,AF, MD2219F,AF 350 400 MQ2218,A, MQ2219,A 400 600 mwrc Wroeet 8A Derate above 25C 219,A SEX MD2218,A, MD2219,A 3.29 3.67 CASE 607-04, STYLE 1 1 MD2218F,AF, MD2219F,AF 2.0 2.28 14 M02218,A, MQ2219,A 2,28 3.42 DUAL Tore Device Pp Watts AMPLIFIER TRANSISTOR c= MD2218,4, MD2219,A 18 2.5 NPN SILICON MD2218F,AF, MD2219F,AF 1.0 2.0 MQ2218,A, MQ2219,A 09 3.6 mWPc Derate above 25C MD2218,4, MD2219,A 10.3 14.3 MD2218F,AF, MD2219F,AF 5.71 11.4 MQ2218,A, MQ2219,A 5.13 20.5 Operating and Storage Junction Ty: Tstg 65to +200 c Temperature Range THERMAL CHARACTERISTICS All Die Characteristic Symbol One Die Equa! Power Unit Thermal Resistance, Junction to Case Rese cw MD2218,A, MD2219,A 97 70 MD2218F,AF, MD2219,AF 175 87.5 MQ2218,A, MQ2219,A 195 48.8 . Thermal Resistance, Junction to Ambient RaJja(t} CAV MD2218,A, MD2219,A 304 280 MD2218,F,AF, MD2219,AF 500 438 MQ2218,A, MQ2219,A 438 292 Junction to Junction to i Ambient Case Coupling Factors % MD2218,A, MD2219,A 84 44 MD2218F,AF, MD2219,AF 75 0 M02218,A, MQ2219,A (Q1-02) 57 0 (Q1-Q3 or 01-04) 55 0 (1) Raja is measured with the device soldered into a typical printed circuit board. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic [ Symbot | Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) ViBRICEO Vde {lc = 10 mAde, Ip = 0} MD2218,A,F, MD2219,A, MQ2218,A, MQ2219,A 30 - - MD2218AF, MD2219AF 40 _ _ Collector-Base Breakdown Voltage V(BR)CBO Vde (lc = 10 pAdc, Ie = 0) MD2218,A,F, MD2219,A, MQ2218,A, MD2219,A 60 _ MD2218AF, MD2219AF 75 - _ MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-61MOTOROLA SC IXSTRS/R FF 4b DE Bpeae res OO8e43b 3 i 6367254 MOTOROLA SC (XSTRS/R F) S6D 82436 BD MD2218,A,F,AF, 1D2219,A,AF, MQ2218,A, MQ2219,A Tava ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbol! Min Typ Max Unit Emitter-Base Breakdown Voltage ViBRIEBO Vde (ig = 10 pAde, Ic = 9) MD2218,A,F, MD2219,A, MQ2218,A, MQ2219,A 5.0 _ - MD2218AF, MD2219AF 6.0 _ _ Collector Cutoff Current IcEV nAdc (Veg = 60 Vde, VeB(off} = 3.0 Vdo) MD2218,F, MD2219,F, MO2218,A 20 _ - MD2218A,AF, MD2219A,AF, MQ2219,A 16 _ _ Base Cutoff Current IBL 30 _ - nAde (VcE = 50 Vide, VeBioff) = 3.0 Vdc) ON CHARACTERISTICS(2) DC Current Gain hre {I = 0.1 mAdc, Vog = 10 Vde) M02218,A,F,AF, MQ2218,A 20 50 _ MD22139,A,AF, MQ2219,A 35 45 ad (ig = 1.0 mAdc, Voce = 10 Vde) MD2218,A,F,AF, MQ2218,A 25 55 _ MD2219,A,AF, MQ2219,A 50 55 ~ (ic = 10 mAde, Voce = 10 Vdc) MD2218,4,F,AF, MO2218,A 35 65 - MD2219,A,AF, MQ2219,A 76 85 _ (Ic = 150 mAde, VcE = 1.0 Vdc) MD2218,A,F,AF, MQ2218,A 20 65 - MD2219,A,AF, MQ2219,A 50 65 (Ic = 150 mAde, Vcg = 10 Vdc} MD2218,AF,AF, MQ2218,A 40 30 120 MD2219,A,AF, MQ2219,A 100 120 300 {Ic = 300 mAde, VceE = 10 Vdc} MD2218,A, MQ2218,A 25 75 _ MD2219,A, MQ2219,A 30 75 _ Collector-Emitter Saturation Voltage VcE(sat) Vde (Ic = 160 mAde, Ig = 15 mAdc) MD2218,A,F, MD2219,A, MQ2218,A, MQ2219,4 _ 0.2 0.4 MD2218AF, MD2219AF _- 0.3 {Ic = 300 mAde, Ig = 30 mAdc) ! MD2218,A,F, MD2219,A, MQ2218,A, MQ2219,A _ 0.35 1.2 MD2218AF, MO2219AF _ _- 0.9 Base-Emitter Saturation Voltage VBEtsat) Vde (ig = 150 mAde, Ip = 15 mAdc) MD2218,A,F, MD2219,A, MQ2218,A, MQ2219,A 0.6 0.95 1.3 MD2218AF, MD2219AF 0.6 1.0 1.2 (i = 300 mAde, Ig = 30 mAdc)MD2218,4,F, MD2219,A, MQ2218,4, MO2219,A _ _ 2.0 MD2218AF, MD2219AF ~ _ 1.8 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product tr 200 250 _ MHz (ic = 20 mAde, Veg = 20 Vdc, f = 100 MHz) Qutput Capacitance Cobo _ 3.5 8.0 pF (Vop = 10 Vdc, ie = 0, f = 100 kHz) Input Capacitance Cibo pF (Veg = 0.5 Vde, Ic = 0, f = 100 kHz} MD2218,A,F, MD2219,4, MQ2218,A, MQ2219,A _ 15 20 MD2218AF, MD2219AF 48 25 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-62MOTOROLA SC {XSTRS/R Ft 6367254 MOTOROLA SC XSTRS/R F) MD2218,A,F,AF, MD2219,4,AF, MQ2218,A, MQ2219,A qb DE Bpeabresh ooae437 5 f 86D 82437 BD Traa-at ELECTRICAL CHARACTERISTICS (continued) {Ta = 25C unless otherwise noted.) [ Characteristic | Symbol | Min Typ Max Unit SWITCHING CHARACTERISTICS Delay Time (Vcc = 30 Vde, Ic = 150 mAdc, VBE(off) = 0.5 Vdc, Igy = 15 mAdc} MD2218,F, MD2219 tg _ _ 20 ps MD22184,AF, MD2219A,AF _ _ 16 Rise Time MD2218,F, MD2219 tr 40 us MD2218A,AF, MD22194,AF _ _ 30 Storage Time (Voc = 30 Vde, I = 160 mAde, ig1 = lpg = 15 mAdc} MD2218,F, MD2219 ts - - 280 HS MD2218A,AF, MD2219A,AF =_ _ 250 Fall Time MD2218,F, MD2219 tf _ _ 70 MD2218A,AF, MD2219A,AF _ 60 {2) Pulse Test: Pulse Width = 300 ys, Duty Cycle = 2.0%. hee, DC CURRENT'GAIN (NORMALIZED) FIGURE 1 NORMALIZED DC CURRENT GAIN 2.0 3.0 : 10 20 30 50 70 100 200 300 500 Ic, COLLECTOR CURRENT (mA} FIGURE 2 "ON" VOLTAGES 0.8 0.6 V, VOLTAGE (VOLTS) 04 02 VCE (sat) Iesig = 10 0 o6 10 20 5.0 0 20 50 6100 = 200 500 ic, COLLECTOR CURRENT {mA} FIGURE 3 TEMPERATURE COEFFICIENTS 2 a = & o oo a 4 a oy, TEMPERATURE COEFFICIENT (mVC) ' n o> &m 1a 02.0 5.0 10 20 50 100 = 200 500 Ic, COLLECTOR CURRENT (mA) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-63MOTOROLA SC XSTRS/R FF SR 4 6367254 MOTOROLA SC (XSTRS/R F) MD2218,A,F,AF, MD2219,A,AF, MQ2218,A, MQ2219,A NF, NOISE FIGURE (dB) fT, CURRENT-GAINBANDWIDTH PRODUCT (MHz) t, TIME (ns) Fb DE b3n7254 0082438 7 y 86D 82438 0D T-RA- AT NOISE FIGURE (VcE = 10 Vdc, Ta = 25C) FIGURE 4 FREQUENCY EFFECTS Ip = 10 nA As, 4.3kO 010 82 O05 10 26 5.0 1020 s0 100 f, FREQUENCY (kH2} FIGURE 6 ~ CURRENT-GAIN-BANDWIDTH PRODUCT S00 Vce=20V Ty= 25C f= MHz 300 200 20 20 30 50 10 Ig, COLLECTOR CURRENT (mAdc) 10 ot 02 03 05 1.0 20 30 FIGURE 5 SOURCE RESISTANCE EFFECTS te=1.0 mA 100 pA 3 w oc > 2 = us 2 3 z ir z a1 02 O5 10 2.0 60 10 20 50 = 100 Rg, SOURCE RESISTANCE (k OHMS) FIGURE 7 CAPACITANCES Ty = 25C & ar 2 z < Ee Sg = < o 0. 02 06 (10 REVERSE VOLTAGE (VOLTS} 20 30 50 10 20 SWITCHING TIME CHARACTERISTICS FIGURE 8 TURN-ON TIME Ty = 25C l/lg = 10 Yee = 0 UNLESS NOTED 20 40 Ic, COLLECTOR CURRENT (mA) FIGURE 9 CHARGE DATA 10,000 Ty = 25C 5000 lefly = 10 = 5V {UNLESS NOTED} 2000 Ss Ss Ss ap r= Ss HIGH GAIN CHARGE (pC) 200 Yeo = 30V 100 CHARGE ALL TYPES 10 2030 50 100 Ic, COLLECTOR CURRENT (mA) 200 300 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-64MOTOROLA SC {XSTRS/R FI Sh Def ese7254 ooseyaa a 6367254 MOTOROLA SC (XSTRS/R Fd S6D 824393 Do MD2218,A,F,AF, MD2219,A,AF, MQ2218,A, MQ2219,A T- aae- a7l FIGURE 10 TURN-OFF BEHAVIOR tolls = 20 ic/ly =20 Icftg = 10 4, ty STORAGE AND FALL TIME (ns? 1, ty, STORAGE AND FALL TIME (ns) 30 10 2 30 50 70 100 200 = 300 Ie, COLLECTOR CURRENT (mA) fe, COLLECTOR CURRENT (mAl FIGURE 11 DELAY AND RISE TIME FIGURE 12 STORAGE TIME AND FALL EQUIVALENT TEST CIRCUIT TIME EQUIVALENT TEST CIRCUIT GENERATOR RISE TIME < 2.0 ns RISE TIME < 3.0% +30 ' PY < DUTY CYCLE = 2.0% *30V DUTY CYCLE = 2.0% 200 +16.2V SCOPE Rin > 100 & ohms 99V 819 Cin < 12 pF RISE TIME < 5.0 ns g--l---jJ----- > 200 | a= 4-13. V SCOPE : Rin > 180 & ohms ; Cin < 12 pF RISE TIME < 5.0ns t -3.0V MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-65