2SK1821-01M
N-channel MOS-FET
FAP-IIA Series 600V 6,5Ω 2A 30W
>Features > Outline Drawing
-High Speed Switching
-Low On-Resistance
-No Secondary Breakdown
-Low Driving Power
-High Voltage
-VGS = ± 30V Guarantee
-Avalanche Proof
>Applications
-Switching Regulators
-UPS
-DC-DC converters
-General Purpose Power Amplifier
>Maximum Ratings and Characteristics > Equivalent Circuit
-Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage VDS 600 V
Continous Drain Current ID2A
Pulsed Drain Current ID(puls) 6A
Continous Reverse Drain Current IDR 2A
Gate-Source-Voltage VGS ±25 V
Max. Power Dissipation PD30 W
Operating and Storage Temperature Range Tch 150 °C
Tstg -55 ~ +150 °C
-Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V(BR)DSS ID=1mA VGS=0V 600 V
Gate Threshhold Voltage VGS(th) ID=10mA VDS=VGS 2,1 3,0 4,0 V
Zero Gate Voltage Drain Current IDSS VDS=600V Tch=25°C 10 500 µA
VGS=0V Tch=125°C 0,2 1,0 mA
Gate Source Leakage Current IGSS VGS=±30V VDS=0V 10 100 nA
Drain Source On-State Resistance RDS(on) ID=1A VGS=10V 5,5 6,5 Ω
Forward Transconductance gfs ID=1A VDS=25V 11,8 S
Input Capacitance Ciss VDS=25V 270 400 pF
Output Capacitance Coss VGS=0V 32 48 pF
Reverse Transfer Capacitance Crss f=1MHz 15 23 pF
Turn-On-Time ton (ton=td(on)+tr)td(on) VCC=300V 4 6 ns
trID=2A 12 18 ns
Turn-Off-Time toff (ton=td(off)+tf)td(off) VGS=10V 25 40 ns
tfRGS=25 Ω20 30 ns
Diode Forward On-Voltage VSD IF=2xIDR VGS=0V Tch=25°C 0,92 1,41 V
Reverse Recovery Time trr IF=IDR VGS=0V 500 ns
-dIF/dt=100A/µs Tch=25°C
-Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance Rth(ch-a) channel to air 62,5 °C/W
Rth(ch-c) channel to case 4,167 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET
2SK1821-01M
600V 6,5Ω 2A 30W
FAP-IIA Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
↑1↑2↑3
ID [A]
RDS(ON) [Ω]
ID [A]
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑4↑5↑6
RDS(ON) [Ω]
gfs [S]
VGS(th) [V]
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitance vs. V
DS
Safe operation area
Forward Characteristics of Reverse Diode
↑7↑8↑9
C [nF]
ID [A]
IF [A]
VDS [V]
→
VDS [V]
→
VSD [V]
→
Allowable Power Dissipation vs. T
C
↑
Zth(ch-c) [K/W]
Transient Thermal impedance
↑10 11
PD [W]
Tc [°C]
→
t [s]
→
This specification is subject to change without notice!
