NOT RECOMMENDED FOR NEW DESIGN USE DMN61D9UDW DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Low On-Resistance (1.0V Max) Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) SOT363 D2 G1 S1 S2 G2 D1 ESD PROTECTED TO 2kV Top View Top View Internal Schematic Ordering Information (Note 4) Part Number DMN5L06DWK-7 Notes: Case SOT363 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information DAB = Marking Code YM = Date Code Marking Y = Year ex: G = 2019 M = Month ex: 9 = September DAB YM DAB YM Date Code Key Year Code Month Code 2006 T 2007 U 2008 V ... ... 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E 2018 F 2019 G Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMN5L06DWK Document number: DS30930 Rev. 8 - 3 1 of 6 www.diodes.com January 2019 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN61D9UDW DMN5L06DWK Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain Source Voltage Gate-Source Voltage Drain Current Symbol VDSS VGSS Continuous Pulsed (Note 6) Value 50 20 305 800 Unit V V Value 250 500 -65 to +150 Unit mW C/W C ID mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Symbol PD RJA TJ, TSTG (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Min Typ Max Unit BVDSS IDSS 50 60 V nA IGSS 1 500 50 A nA nA VGS(TH) 1.4 1.0 V 3.0 2.5 2.0 ID(ON) |YFS| VSD 0.49 0.5 200 0.5 1.4 A mS V Ciss Coss Crss RG QG QGS QGD tD(ON) tR tD(OFF) tF 65 0.4 0.1 0.1 2.1 1.8 14.4 8.4 50 25 5.0 pF pF pF nC nC nC ns ns ns ns RDS(ON) On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Test Condition VGS = 0V, ID = 10A VDS = 50V, VGS = 0V VGS = 12V, VDS = 0V VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VDS = VGS, ID = 250A VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS = 10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 0.25A VDD = 30V, VGS = 10V, RG = 25, ID = 0.2A 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN5L06DWK Document number: DS30930 Rev. 8 - 3 2 of 6 www.diodes.com January 2019 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN61D9UDW DMN5L06DWK V GS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 10 0 -50 75 100 125 150 -25 25 50 0 C)) Tch, CHANNEL TEMPERATURE ( ( Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 10 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06DWK Document number: DS30930 Rev. 8 - 3 3 of 6 www.diodes.com VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage January 2019 (c) Diodes Incorporated DMN5L06DWK RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () IDR, REVERSE DRAIN CURRENT (A) NOT RECOMMENDED FOR NEW DESIGN USE DMN61D9UDW IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) Fig. 11 Derating Curve - Total DMN5L06DWK Document number: DS30930 Rev. 8 - 3 150 4 of 6 www.diodes.com January 2019 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN61D9UDW DMN5L06DWK Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0 8 -All Dimensions in mm b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions C G X Y Y1 G Y1 Y Value (in mm) 0.650 1.300 0.420 0.600 2.500 X DMN5L06DWK Document number: DS30930 Rev. 8 - 3 5 of 6 www.diodes.com January 2019 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN61D9UDW DMN5L06DWK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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