DMN5L06DWK
Document number: DS30930 Rev. 8 - 3
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January 2019
© Diodes Incorporated
DMN5L06DWK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Dual N-Channel MOSFET
Low On-Resistance (1.0V Max)
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected up to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Packaging
DMN5L06DWK-7
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2006
2007
2008
…
2012
2013
2014
2015
2016
2017
2018
2019
Code
T
U
V
…
Z
A
B
C
D
E
F
G
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT363
Top View
Top View
Internal Schematic
DAB = Marking Code
YM = Date Code Marking
Y = Year ex: G = 2019
M = Month ex: 9 = September
ESD PROTECTED TO 2kV
S
1
D
1
D
2
S
2
G
1
G
2
DAB YM
DAB YM
NOT RECOMMENDED FOR NEW DESIGN
USE DMN61D9UDW
DMN5L06DWK
Document number: DS30930 Rev. 8 - 3
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www.diodes.com
January 2019
© Diodes Incorporated
DMN5L06DWK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
20
V
Drain Current Continuous
Pulsed (Note 6)
ID
305
800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
250
mW
Thermal Resistance, Junction to Ambient
RθJA
500
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
50
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
IDSS
60
nA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
1
500
50
µA
nA
nA
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.49
1.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)




3.0
2.5
2.0
Ω
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
On-State Drain Current
ID(ON)
0.5
1.4
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
|YFS|
200
mS
VDS = 10V, ID = 0.2A
Source-Drain Diode Forward Voltage
VSD
0.5
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
5.0
pF
Gate Resistance
RG

65
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
QG

0.4
nC
VGS = 4.5V, VDS = 10V,
ID = 0.25A
Gate-Source Charge
QGS

0.1
nC
Gate-Drain Charge
QGD

0.1
nC
Turn-On Delay Time
tD(ON)

2.1
ns
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 0.2A
Turn-On Rise Time
tR

1.8
ns
Turn-Off Delay Time
tD(OFF)

14.4
ns
Turn-Off Fall Time
tF

8.4
ns
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
NOT RECOMMENDED FOR NEW DESIGN
USE DMN61D9UDW
DMN5L06DWK
Document number: DS30930 Rev. 8 - 3
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V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (
癈
)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
-50 -25 025 50 75 100 125 150
0
I DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
D,
1
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
D
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
V GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
(°C)
NOT RECOMMENDED FOR NEW DESIGN
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DMN5L06DWK
Document number: DS30930 Rev. 8 - 3
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T , AMBIENT TEMPERATURE ( C)
Fig. 7 A°
Static Drain-Source On-State Resistance
vs. Ambient Temperature
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
I , REVERSE DRAIN CURRENT (A)
DR
I , REVERSE DRAIN CURRENT (A)
DR
1
I , DRAIN CURRENT (A)
D
Fig.10 Forward Transfer Admittance vs. Drain Current
|Y |, FORWARD TRANSFER ADMITTANCE (S)
fs
-50 0 50 100 150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 11 Derating Curve - Total
A°
P , POWER DISSIPATION (mW)
D
NOT RECOMMENDED FOR NEW DESIGN
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DMN5L06DWK
Document number: DS30930 Rev. 8 - 3
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
e
D
L
E1
b
E
F
A2
A1
ca
SOT363
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.10
0.30
0.25
c
0.10
0.22
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
F
0.40
0.45
0.425
L
0.25
0.40
0.30
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
Y1 G
Y
X
C
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.420
Y
0.600
Y1
2.500
NOT RECOMMENDED FOR NEW DESIGN
USE DMN61D9UDW
DMN5L06DWK
Document number: DS30930 Rev. 8 - 3
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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NOT RECOMMENDED FOR NEW DESIGN
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