MIL SPECS Tc oooo12s ooooa31 s TINCH-POUND] MIL-S-19500/118D AMENDMENT 1 28 April 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N483B, 1N485B, IN486B, 1N5194, 1N5195, 1N5196 JAN, JANTX, JANTXY, AND JANS This amendment forms a part of Military Specification MIL-S-19500/118D dated 11 August 1986, and is approved for use by all Departments and Agencies of the Department of Defense. PAGE 2 Following 3.3.1,.-add the following paragraphs: "3.3.2 Double plug construction. Double plug construction is one where the terminal plugs have equal nominal diameters and are in direct contact with the metallization materials of the semiconductor die; the use of a point contact whisker or other wire conductors fs not allowed. "3.3.3 Thermally matched. The coefficients of thermal expansion of die and package materials shall be matched to prevent thermal stress of dissimitar materials during thermal excursion. "3.3.4 Noncavity. The package glass must be in intimate contact with the semiconductor dtfe Tsolating the anode and cathode regions, and insuring immunity from particle related failures. Voids may be present provided isolation (to prevent arcing) and particle immunity are insured. "3.3.5 1N5194, 1N5195, and 1N5196. These diodes shall be of metallurgically bonded, double plug construction utilizing high temperature metallurgical bonding between both sides of the silicon die and terminal pins. "3.3.6 JANS construction. These devices shall be metallurgically bonded, thermally matched, noncavity, double plug construction, utilizing high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Opaque glass is prohibited. The silver button or dumet package design {fs not permitted. No solder or low temperature bonding materials shall be used in the diode assembly." AMSC N/A lof 2 FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL SPECS Icy o0001e5 g00043e ? I MIL-S-19500/118D AMENDMENT 1 PAGE 4 4.3.1, delete in its entirety and substitute the following: "4.3.1 Power burn-in and steady state operation life. Al] devices shail be operated under one of the following conditions. | | I Type 1/ | Ta = +25C, #3C, | Ta = +25C #3C | | Ig = 200 mA | | | f = 60 Hz | | | | | | 1N483B, 1N5194 | Vpwm = 70 V (pk) | Ip = 175 mA | 1N485B, 1N5195 VewM = 180 V (pk) | If = 175 mA | 1N486B, 1N5196 | Veym = 225 V (pk) ! Ip = 175 mA | | 1/ Derate at 1.2 mA/C between +25C and +150C. Derate at 1.0 mA/ C above +150 C." PAGE 6 TABLE Ila., subgroup 5, conditions column, delete in its entirety and substitute "see 4.3.1". PAGE 7 TABLE IIb., subgroup 3, conditions column, delete in its entirety and substitute see 4.3.1". PAGE 8 TABLE TAT, Subgroup 6, conditions column, delete in its entirety and substitute "see 4.3.1", CONCLUDING MATERIAL Custodians: Preparing activity: Army - ER Navy - EC Navy - EC Air Force - 17 Agent: NASA - NA DLA - ES Review activities: (Project 5961-1120) Army - MI Navy - SH Air Force - 11, 85, 99 DLA - ES User activities: Navy - AS, CG, MC, OS Air Force - 14, 19T- 01-04 MIL-S-19500/1180 11 AUGUST 1986 MIL SPECS ICpoooo1es oo00aa3 4 f MIL-S-19500/118 16 December 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5195, 1N5196 JAN, JANTX, JANTXV, AND JANS This specification is approved for use by al} Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. T I | | I Ig | Tesm Ty | | Type Vem | VRuM Io i ITA = 150C tp = 1/120 s ITs op and TsTg | | I | | 1 | i | | IWipk) Vipk) mA _dc |! mA_dc A(pk) jm dc ! C ! | 1Na638, 1N5194 | 80 | 70 200 | 50 2 ! 650 ! -65 | 1NS88 1N5195 200 ! 180 ! 200 ! 50 2 ! 650 to |1N4868 1N5196 | 250 225 200 50 ! 2 650 +200 | / Derate at 1.2 mA/C between 25C and 150C. Derate at 1.0 mA/C above 150C. 1.4 Primary electrical characteristics. I I I ITpo at Vewm | | Type | Vey Ip; at Vewy | | | | | | Ta = 150C | | | | | | I | | | I | |Video | nA_dc | uA_de I { 1N483B, 1N5194 T.0 | 25 I | i | 4N485B, 1N5195 1.0 25 5 ! 1N486B, 1N5196 1.0 ! 25 5 ! 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specification and standard. The following specification and standard form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents shall be those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation. [Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of | use in improving this document should be addressed to: Commander, Space and Naval Warfare Systems { Command, ATTN: SPAWAR 8111, Washington, DC 20363, by using the self-addressed Standardization [Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. THIS DOCUMENT CONTAINS LQ PAGES. AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL SPECS IC g 0000125 Ooooss4 a , MIL-S-19500/118D SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of the specification and standard required by contractors in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein (except for associated detail specifications, specification sheets or MS standards), the text of this specification shall take precedence. Nothing in this specification, however, shall supersede applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Detail specification. The individual item requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-S-19500. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified tn MIL-S-19500, and figure 1 herein. 3.3.1 Lead finish. Lead finish shall be gold plated or tinned. Where a choice of finish is desired, Tt shall be specified in the contract or purchase order (see 6.2). 3.4 Marking. Marking shall be in accordance with MIL-S-19500. At the option of the manufacturer, the folTowing marking may be omitted from the body of the diode: a. Country of origin. b. Manufacturer's identification. c. Lot identification code. d. The 1N" portion of the type designation. (Note: Options c and d apply to types 1N5194 through 1N5196 only.) 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be fn accordance with MIL-S-19500, and as specified herein. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S-19500. 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-S-19500 (tabTe II), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.MIL SPECS MIL-S-19500/118D Icg 0000125 g000835 29 C @p> A ea) Cc IN483B8 . Inds. SFOS _ [_ J B IN486B { E Cc eorrp- A orie Cc rc 7 7 7 IN5I94 : | INSIS5 }] HF B IN5I96 7 F | -~-l . 6 X\ OPTIONAL Dimensions in inches with metric Type Ltr | equivalents (mm) in parentheses Notes (see note 1) Minimum Maximum 1N483B A .230 (5.84) -300 (7.62) 1N485B B 085 (2.16) .125 (3.18) 3 C 1.000 (25.40) | 1.500 (38.10) 4,5 1N4868 D 018 (0.46) .022 (0.56) 2,5 A .120 (3.05) .180 (4.57) B -056 (1.42) .094 (2.39) 1N5194 C 1.0 ee 5 4,5 D 019 (0.48 021 (0.53 2.5 INS195 [~-197120 (53.85) 1N5196 F 030 (0.76) G .075 (1.91) NOTES: 1. Metric equivalents are given for general information only. 2. The specified lead diameter applies in the zone between .050 and 1.00 inch from the diode body. Outside this zone the lead diameter is not controlled. The minimum body diameter shal] be maintained over .15 inch of body length. 3. 4. Leads shall be electrically insulated from the case. 5 Both leads. FIGURE 1. Physical dimensions.MIL SPECS TCgogoo12s Ooooaas 4 i MIL~S-19500/118D | I Measurement T | Screen (see table II T[ I | of MIL-S-19500) | JANS level {| JANTX and JANTXV levels | | | T I ! 9 ! Ipy and Vr} ! Not applicable TT l I I | [Ip1 and Vey; Alpy = 100% of | | | il linitial reading or 10 nA dc, | Ipg1 and VFy | lwhichever is greater. AVF, = 50 | | {m dc change from initial reading. | ! I ] I T ! 12 See 4.3.1 ! See 4.3.1 ! | 1 T qT { 13 |Subgroups 2 and 3 of table I herein; [Subgroup 2 of table I herein; | | lalpy = 100% of initial reading [alg = 100% of initial | | lor 10 nA dc, whichever is greater. lreading or 10 nA dc, which- | | {aVey = 50 mV dc change from initial lever is greater. aVey = 50 | | lreading. imV dc change from initial { i | lreading. { 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Ta = 25C; Ig = 200 mA de; f = 60 Hz 1N483B, 1N5194 VawM = 70 V(pk) 1N485B, 1N5195 VpwM = 180 V(pk) 1N486B, 1N5196 Vw = 225 V(pk) 4.4 Quality conformance inspection. Quality conformance inspection shal] be in accordance with MIL-S$-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500, and table I herein. (End-point electrical measurements shall be in accordance with the applicable steps of table IV herein.) 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IVa (JANS) and table IVb (JAN, JANTX, and JANTXV) of MIL-S-19500, and tables Ila and IIb herein. Electrical measurements (end points) and delta requirements shall be in accordance with the applicable steps of table IV herein. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500, and table III herein. Electrical measurements (end points) and delta requirements shall be in accordance with the applicable steps of table IV herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables. 5. PACKAGING 5.1 Packajing requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Ordering data. Acquisition documents may specify the lead finish (see 3.3.1). 6.3 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes.Ic cooo12s ooo0837 & [ MIL-S-19500/118 TABLE I. MIL SPECS Group A inspection. - - c > < al = orm - e _ fond Aloe = - So A 5 nn a >< < Pm Feb be eal KC ee m> << Q on a}--- Ee at = << a] eet eins fos ee es un on o oa - w ~ i) co A ec e o - = = a=] = - = eS ee ia Yo wo a n i _ fs i i ee ee nn ee ER ee EE A ee I a A a a OY eo _ V00 od ooXv = ' x uuT ana uuT ev i = sac << <t = t > Set aan aaga > ' oO ooo ooo N ' LO LO LD oqaoo oo. . ' a ANA Adee 1 1) LO t ' t tooo aoe tee ' 1 ' tay a pea t ' tors tue oud t fe ee er ce ee ce ee Ee I Ah eS ee a 1 wd A oo N t le ~ aw ce w ! => al > bn ee er ee et A ee et a Ae A eR oa on o ~ * -_ x ct a4 Tse _ x eS 32 eons a EN ov me Vo a EA oo Py Mw ao v1 ooeTe xa vusT ~ vi a > n ~~ a a] < Go we MD t- eo >> >> o >> oO -~E YW = o < c wo _ => > > ww w 43 ow Sgey BR g 8 e88 8 gees Sh2u% gH Q : a-DO Mtn iw A Ran 1 a-eD YY N Sor fT os 3 s s ES pun Hat uuu noon nt nono tt ron a> uw = a _ ~ Let ow w aa crew Ceo < eee w as cCOoOo kL oF Po >>> >>> e >a > ~ yo tet Qed nun bn ne a ee ee ee a A a A A A ed A Se an ed wo wo wo vt wo 3 3 3 3 3 3 8 Oo N s+ 2 t+ = t+ g ? a ve s ww a 5 2 wo ~~ YD co > tINwo an eS x oS wo co AON oS . | = o - BG nnie vo a o an coc tTMw ec stim 3 SC WwW S - s+ o o wo a N o Go AAD oa ARD o - 2zezz 3 - wo] 2 ~ - co LS deed SC ate Hoe S eetet Dee > ol a c a o _ S LOLOIw SS. wilnpw = Oo of cS wo C3 ss} Ure Ss 302 z= 3s 222 3 wo aan 0 DVD Ss oO 3 s - Ss o cr > OO wae 0 Aaa =) ar vo mam Dor s. o| xX of re x ov ~ s eo a 288 ar cS | oe 3 o Ss - o co oy a an w an a oa co ao eo = a o = a a - a 2 - ca ae wn 2 a + 5 eo goed yg & a2 a 2 s 2 a 3 oun 3 oS X 3 8 s 3 8 = Y > 42zsz PW 3 s w 3 wosac = ov o a oO nl 2 0 ate Qa tt Al Dm 9 A or > toed > srt no & zo xs @ o 2zzz o 222 o s - -> mw ow ated aw estrtead = oa | = na is z 17 For LTPD numbers see MIL-S-19500.MIL SPECS IC o000125 Ooona3a 8 i MIL~S-19500/118 TABLE IIa. Group B inspection for JANS devices. Subgroup 6 Not applicable ] I MIL-STO-750 [Qualification and [Small lot quality | | Inspection 1 | large lot quality | conformance | IMethod| Conditions | conformance 1/ | inspection n/c 1/\ | | | inspection LTPD | | | | | | I { | | oT Subgroup 1 | ! | ! Physical dimensions 2066 ! See figure 1 ! ! | Subgroup 2 | | Solderability 2026 ! ! ! ! Resistance to solvents 1022 ! ! ! ! Subgroup 3 ! | | | Thermal shock | 1051 | | | | (temperature cycling) ! | Hermetic seal ! 1071 ! ! | | | a. Fine leak | | | | | b. Gross leak ! ! Electrical measurements ! ! See table IV, steps 1 and 3 ! | Decap internal visual | 2075 | | | | | (design verification) | ! ! | ! Subgroup 4 ! | Intermittent | 1037 | 15 = 50 mA de; f = 60 Hz; | | | | operation life | | tog = ton = 3 minutes | | | { | | minimum, for 2,000 cycles; | | | | | | Ta = 25C | | | | | 1N483B, 1N5194 { | Vp = 70 V(pk) | | | | 1N485B, 1N5195 | | Vp = 18 V(pk) | | | 1N486B, 1N5196 | Vp = 225 V(pk) |! ! | Electrical measurements | | See table 1V, steps 1, 3, 5, | l | | | | and 6 | ] | | | I | | | | Subgroup 5 | ! ! | Accelerated steady-state | 1027 | I, = 200 mA dc; f = 60 Hz; | | | | operation life ! ! Ta = 125C ! ! ! | | 1N483B, 1N5194 l | Vp = 70 V(pk) | | | | IN485B, 1N5195 | l VR = 18 V(pk) l l | ! 1N486B, 1N5196 | | Vp = 225 V(pk) | ! { Electrical measurements | | See table 1V, steps 1, 3, 5, | | | \ | | and 6 | | | i | | | | | | | | \ | | | | | | | | | | { | | | | | | | | | / For LTPD numbers see MIL-S-19500.MIL SPECS IC oooo0125 ooo0a39 T ft MIL-S-19500/118 TABLE IIb. Group B inspection for JAN, JANTX, and JANTXV devices. r Inspection MIL~STD- 7/50 Method | Conditions LTPD / { | | | | | | | | | | | { | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | Subgroup 1 Solderability Resistance to solvents Subgroup 2 Thermal shock (temperature cycling) Hermetic seal a. Fine leak b. Gross leak Electrical measurements Subgroup 3 Steady-state operation life 1N4838, 1N5194 1N485B, 1N5195 1N486B, 1N5196 Electrical measurements Subgroup 4 Decap internal visual (design verification) Subgroup Not applicable Subgroup 6 High-temperature life non-operating) Electrical measurements 2026 1022 1051 1071 1027 2075 1032 ee i i i ee ee ee See table IV, steps 1 and 3 50 mA dc; f = 60 Hz 70 V(pk) 18 V(pk) 225 V(pk) u <= ~w non ow See table IVY, steps 2 and 4 Ta = 200C See table IV, steps 2 and 4 a ee - - --- - f- 1/ For LTPD numbers see MIL-S-19500.MIL SPEC TABLE III. S IC g aogo1es Oonoauo b i MIL-S-19500/118 Group C inspection (all quality levels). Inspection Method MIL-STD- 750 Conditions LTPD / Subgroup 1 Physical dimensions Subgroup 2 Thermal shock (glass strain) Terminal strength (lead fatigue) Hermetic seal a. Fine leak b. Gross leak Moisture resistance External visual Electrical measurements Subgroup 3 Shock (monitored) 1N483B, 1N5194 1N485B, 1N5195 IN486B, 1N5196 Monitor during test: Change in reverse current of >10 us Constant acceleration Electrical measurements Subgroup 4 Salt atmosphere (corrosion) Subgroup 5 Not applicable Subgroup 6 Steady-state operation life 1N483B, 1N5194 1N485B, 1N5195 1N486B, 1N5196 r | | r | | | | | | | \ | | | | | | | | | | | { | | | | | Vibration, variable frequency \ | | \ | | | | | | | | { | | | | | | | | | | | | | | | | | Electrical measurements | | | i | | | | | { | | | | | | | | | | { | | | | | | | | | | | | | | | | | | | | | | | | | | | | { | | | | | | | | | | | | 2066 1056 2036 1071 1021 2071 2016 2057 2006 1041 1026 j | [ | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | See figure 1 Test condition E See table IV, steps 1 and 3 40 V de 100 V de 125 V de < ma nun Maximum alg shall be 10 yA dc See table IV, steps 1 and 3 50 mA de; f = 60 Hz 70 V(pk) 18 V(pk) 225 V(pk) < 3 nouow VR See table IV, steps 1, 3, 5, and 6 (JANS) and steps 2 and 4 (JAN, JANTX, and JANTXYV) ne a nr rn er ne a a a re a a eo a 1/ For LTPD numbers see MIL-S-19500.1N483B, 1N5194 1N485B, 1N5195 1N486B, 1N5196 70 V de 18 V de 225 V dc <<< Anwn uoajn \change from initial lreading, whichever lis greater MIL SPECS TC oooo1es ooooay1 6 t MIL-S-19500/118 TABLE IY. Groups A, B, and C electrical measurements. T MIL -STD-750 T.Limits 1 T | Step | Inspection Method | Conditions [ Symbol Min Max Unit T T T | | | | | io1 | Forward voltage 1 4011 [Ip = 100 ma(pk) | Vey | --- | 1.0 4(pk) | | | I(pulsed); tp = &3ms_ | | { | | ! max; duty cycle <2% ! ! | 2 | Forward voltage I [Ip = 100 mitpk) | Veq { --- | 1.2 [V(pk) | | { I(pulsed); t, = 8.3 ms | | I | | | | | Imax; duty cycle <2% | | | | | | | | | | | l | | | 3 ! Reverse current ! ! Ip1 | | 1N483B, 1N5194 | lVp = 70 V de | | --- | 25 [nA de | | | 1N485B, 1N5195 | lVp = 18 V de | {| --- | 25 InA de | | 1N486B, 1N5196 | | R = 225 V de | |! --- 25 Ink dc ! ! 4 | Reverse current | ! Ip1 ! ! | | 1N483B, 1N5194 | IVp = 70 V de | | --- | 50 [nA dc | | | 1N4858, 1N5195 i \Vp = 180 V dc | {| --- | 50 InA de | ! 1N486B, 1N5196 ! IVR = 225 V dc ! --- 50 ink dc 1 5 i Forward voltage | If = 100 mA(k) | avery 1#50 mV dc change | | | | | (butsed) ; = 8&3ms_ | {from initial readingl Imax; duty Pele 2% ! 6 ! Reverse current sIpy | 100% or 10 nA dc { | | | | l | | | | | | | l | | | | | | i \ | | | | |MIL SPECS Custodians: Army - ER Navy - EC Air Force - 17 NASA - NA Review activities: Army - MI Navy - SH Air Force - 11, 85 User activities: Navy - AS, CG, MC, OS Air Force - 14, 19 1c oooo1es Oogoase T rp MIL-S-19500/1180 Preparing activity: Navy - EC Agent: DLA - ES (Project 5961-0998) 10