LESHAN RADIO COMPANY, LTD.
L1SS356T1–1/3
Band Switching Diode
2
ANODE
1
CATHODE
SOD– 323
1
2
L1SS356T1
z Applications
High frequency switching
zFeatures
1) Small surface mounting type.
2) High reliability.
zConstruction
Silicon epitaxial planar
Absolute maximum ratings (TA=25°C)
Parameter Symbol Limits Unit
DC reverse voltage VR35 V
DC forward current IF100 mA
Junction temperature Tj125 °C
Storage temperature Tstg -55~+125 °C
Electrical characteristics (TA=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF– – 1.0 V IF=10mA
Reverse current IR––10nAV
R=25V
Capacitance between terminals CT––1.2pFV
R=6V, f =1MHz
Forward operating resistance rF––0.9ΩIF=2mA, f =100MHz
Driver Marking
L1SS356T1 = B