GHz TECHNOL OGY I NC. RESERVES THE RIG HT TO MAK E CHANG ES WI T HOUT F URTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UMIL 80
80 Wa tts, 28 Volts, Class AB
Defcom 200 - 500 MHz
GENERAL DESCRIPTION
The UMIL80 is a double input matched COMMON EMITTER broadband
transistor specifically intended for use in the 200-500 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
CASE OUTLINE
55HV, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC 220 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage 65 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 12 A
Maximu m Temperatures
Storage Temperature - 65 to +150oC
Operating Junction Temperature +200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMB OL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 400 MHz
Vcc = 28 Volts
80
9.0
55 9.5 10
5:1
Watts
Watts
dB
%
BVebo
BVces
BVceo
BVcbo
Cob
hFE
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 20 mA
Ie = 20 mA
Ic = 20 mA
Vcb=28 V, F= 1 MHz
Vce = 5 V, Ic = 1 A
4.0
60
31
60
10 80
0.8
Volts
Volts
Volts
Volts
pF
oC/W
Issue October 1998 : Correct Case from Hu to HV
UMIL80
August 1996
