NE3516S02 Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value) 4-pin Micro-X plastic (S02) package APPLICATIONS N ce T me IN n X to Ku band DBS LNB Other Ku band communication system Part Number Order Number NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D NE3516S02-T1D-A Package Quantity S02 package (Pb-Free) 2 kpcs/reel 10 kpcs/reel Supplying Form Marking * 8 mm wide embossed taping * Pin 4 (Gate) faces the perforation side of the tape t: ORDERING INFORMATION 2 U CE E 35 12 D K R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Rev.1.00 Apr 16, 2012 P Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3516S02-A SC -I n O Symbol VDS Symbol MIN. TYP. MAX. Unit ro p ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified) Drain to Source Voltage Drain Current VDS ID +1 5 +2 10 +3 15 V mA Input Power Pin - - 0 dBm Gate to Source Voltage Drain Current Gate Current Note Total Power Dissipation Channel Temperature Storage Temperature Note: Ratings 4.0 Unit V VGS ID -3.0 IDSS V mA IG Ptot 100 165 A mW Tch Tstg +125 -65 to +125 C C Re pla Parameter Drain to Source Voltage Mounted on 1.08 cm 1.0 mm (t) glass epoxy PWB 2 D D I RECOMMENDED OPERATING RANGE (TA = +25C, unless otherwise specified) Parameter CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 1 of 9 NE3516S02 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Symbol Gate to Source Cut-off Voltage Transconductance Noise Figure Associated Gain MIN. TYP. MAX. Unit IGSO IDSS VGS = 3.0 V VDS = 2 V, VGS = 0 V 15 0.5 30 10 60 A mA VGS(off) gm VDS = 2V, ID = 100 A VDS = 2 V, ID = 10 mA 0.2 55 0.5 65 1.3 V mS 13 0.35 14 0.50 dB dB NF Ga VDS = 2 V, ID = 10 mA, f = 12 GHz 2 Gate to Source Leak Current Saturated Drain Current Test Conditions U CE E 35 12 D K Parameter STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25C, unless otherwise specified) Parameter Noise Figure Symbol NF Ga Reference Value 0.35 Unit dB 13.5 dB ro p D D I Re pla SC -I n O t: N ce T me IN n Associated Gain Test Conditions VDS = 2 V, ID = 6 mA, f = 12 GHz R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 2 of 9 NE3516S02 Re pla SC -I n O t: N ce T me IN n 2 U CE E 35 12 D K TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) ro p D D I Remark The graph indicates nominal characteristics. R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 3 of 9 NE3516S02 ro p D D I Re pla SC -I n O t: N ce T me IN n 2 U CE E 35 12 D K S-PARAMETERS R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 4 of 9 NE3516S02 ro p D D I Re pla SC -I n O t: N ce T me IN n 2 U CE E 35 12 D K RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 5 of 9 NE3516S02 PACKAGE DIMENSIONS ro p D D I Re pla SC -I n O t: N ce T me IN n 2 U CE E 35 12 D K S02 (UNIT: mm) R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 7 of 9 NE3516S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Condition Symbol IR260 : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2% (Wt.) or below 2 U CE E 35 12 D K Soldering Method Infrared Reflow HS350 CAUTION ro p D D I Re pla SC -I n O t: N ce T me IN n Do not use different soldering methods together (except for partial heating). R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 8 of 9 NE3516S02 Caution This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. GaAs Products U CE E 35 12 D K * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 2 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. ro p D D I Re pla SC -I n O t: N ce T me IN n * Do not lick the product or in any way allow it to enter the mouth. R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 9 of 9 Revision History NE3516S02 Data Sheet Description Page - Summary First edition issued ro p D D I Re pla SC -I n O t: N ce T me IN n 2 Date Apr 16, 2012 U CE E 35 12 D K Rev. 1.00 All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 4. 5. 6. 7. 8. 9. 2 SC 10. I en N t: U CE E 35 12 D K 3. em 2. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 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