TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/312
Devices Qualified Level
2N708
JAN, JANTX
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 15 Vdc
Collector-Base Voltage VCBO 40 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector-Emitter Voltage VCER 20 Vdc
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 0.36
1.2 W
W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 0C
1) Derate linearly 2.06 mW/0C for TA > 250C
2) Derate linearly 6.90 mW/0C for TC > 250C
TO-18 (TO-206AA)*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 1.0 µAdc V(BR)CBO 40 Vdc
Emitter-Base Breakdown Voltage
IE = 10 µAdc V(BR)EBO 5.0 Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc V(BR)CEO 15 Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE ≤ 10 Ω V(BR)CER 20 Vdc
Collector-Base Cutoff Current
VCB = 20 Vdc ICBO 25 ηAdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc IEBO 80 ηAdc
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